Electrical stressed effects of metal-organic chemical vapor deposited high permittivity TiO/sub 2/ dielectric metal-oxide-semiconductor field effect transistors

Chemical Vapor ◽

Oxide Semiconductor ◽

Organic Chemical ◽

High Permittivity ◽

Chemical Vapor Deposited ◽

Metal Organic

Electrical reliability of metal-organic chemical vapor deposited high permittivity TiO/sub 2/ dielectric metal-oxide-semiconductor field effect transistors

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584243 ◽

2002 ◽

Author(s):

Hyeon-Seag Kim ◽

S.A. Campbell ◽

D.C. Gilmer

Keyword(s):

Field Effect ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

Organic Chemical ◽

High Permittivity ◽

Chemical Vapor Deposited ◽

Metal Organic ◽

Electrical Reliability

Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3584024 ◽

2011 ◽

Vol 98 (18) ◽

pp. 182102 ◽

Cited By ~ 2

Author(s):

B. S. Ong ◽

K. L. Pey ◽

C. Y. Ong ◽

C. S. Tan ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Chemical Vapor Deposited

Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides

10.1143/jjap.36.4225 ◽

1997 ◽

Vol 36 (Part 1, No. 7A) ◽

pp. 4225-4229

Author(s):

Jinho Ahn ◽

Dim-Lee Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

Device Performance ◽

Gate Oxides ◽

Chemical Vapor Deposited

P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si1-xGex Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System

10.1143/jjap.38.l1099 ◽

1999 ◽

Vol 38 (Part 2, No. 10A) ◽

pp. L1099-L1101 ◽

Cited By ~ 4

Author(s):

Kun-Ming Chen ◽

Hsiang-Jen Huang ◽

Guo-Wei Huang ◽

Chun-Yen Chang ◽

Liang-Po Chen

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

High Vacuum ◽

Chemical Vapor ◽

Ultra High Vacuum ◽

Oxide Semiconductor

Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2Gate Dielectrics

10.1143/jjap.42.7256 ◽

2003 ◽

Vol 42 (Part 1, No. 12) ◽

pp. 7256-7258 ◽

Cited By ~ 6

Author(s):

Sungjoo Lee ◽

Dim-Lee Kwong

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

High Quality

High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.126821 ◽

2000 ◽

Vol 76 (26) ◽

pp. 3920-3922 ◽

Cited By ~ 69

Author(s):

G. Höck ◽

E. Kohn ◽

C. Rosenblad ◽

H. von Känel ◽

H.-J. Herzog ◽

...

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Hole Mobility ◽

Oxide Semiconductor

Investigation of silicon—germanium metal-oxide-semiconductor field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor deposition

2008 5th IEEE International Conference on Group IV Photonics ◽

10.1109/group4.2008.4638131 ◽

2008 ◽

Author(s):

Ching-Ting Lee ◽

Jian-Gang Lin ◽

Hsin-Ying Lee

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Oxide Semiconductor

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.4891431 ◽

2014 ◽

Vol 105 (3) ◽

pp. 033513 ◽

Cited By ~ 27

Author(s):

T. Aoki ◽

N. Fukuhara ◽

T. Osada ◽

H. Sazawa ◽

M. Hata ◽

...

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Cost Effective ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Electrical Characteristics