On the interplay between phonon-boundary scattering and phonon-point-defect scattering in SiGe thin films

ZnO:Al thin films were deposited on flexible substrates by magnetron sputtering. The effects of the carrier concentrations on the hall mobilities of AZO films were investigated. When the carrier concentration was high (~1020/cm3), the hall mobility decreased with increase of the carrier concentration, showing obvious characteristics of ionized impurity scattering; moreover, the carrier mobility could be expressed to be-2.14/3 proportional of the carrier concentration by combining the results of simulation and experiments.simulation and experiment. When the carrier concentration was about a magnitude of 1019 cm-3, the carrier mobility is influenced by the carrier concentration and grain size, which means the carrier mobility was affected by both the grain boundary scattering and ionized purity scattering mechanism.

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Thermal phonon boundary scattering in anisotropic thin films

Applied Physics Letters ◽

10.1063/1.4935160 ◽

2015 ◽

Vol 107 (18) ◽

pp. 183106 ◽

Cited By ~ 13

Author(s):

A. J. Minnich

Keyword(s):

Thin Films ◽

Boundary Scattering ◽

Thermal Phonon

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Modelling of Thermal Rectification in Si and Ge Thin Films

Volume 8C: Heat Transfer and Thermal Engineering ◽

10.1115/imece2013-63613 ◽

2013 ◽

Author(s):

E. Chávez-Ángel ◽

C. M. Sotomayor Torres ◽

F. Alzina

Keyword(s):

Thin Films ◽

Thermal Conductivity ◽

Heat Flow ◽

Temperature Dependence ◽

Cross Section ◽

Impurity Concentration ◽

Boundary Scattering ◽

Bulk Materials ◽

Thermal Rectification ◽

Scattering Effects

In the present work we have studied an extension of the classical thermal rectification, arising in certain cases from the contact of two dissimilar bulk materials with different temperature dependence of the thermal conductivity, to the Si-Ge system when boundary scattering effects are taken into account. Moreover, the directionality of the in-plane heat flow in a Si plate can be achieved by tuning the thickness and the impurity concentration along the cross section of the plate. We have designed several potential structures with this function in mind and discussed the physics behind.

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Inelastic electron–boundary scattering in thin films

Physica B Condensed Matter ◽

10.1016/s0921-4526(98)01338-6 ◽

1999 ◽

Vol 263-264 ◽

pp. 217-219 ◽

Cited By ~ 20

Author(s):

A Sergeev

Keyword(s):

Thin Films ◽

Inelastic Electron ◽

Boundary Scattering

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Thermal Transport in Few-Quintuple Bi2Te3 Thin Films and Nanoribbons

ASME/JSME 2011 8th Thermal Engineering Joint Conference ◽

10.1115/ajtec2011-44540 ◽

2011 ◽

Author(s):

Bo Qiu ◽

Xiulin Ruan

Keyword(s):

Thin Films ◽

Thermal Conductivity ◽

Molecular Dynamics ◽

Temperature Dependence ◽

Thermal Transport ◽

Room Temperature ◽

Phonon Scattering ◽

Md Simulations ◽

Boundary Scattering ◽

Nanoporous Films

In this work, thermal conductivity of perfect and nanoporous few-quintuple Bi2Te3 thin films as well as nanoribbons with perfect and zig-zag edges is investigated using molecular dynamics (MD) simulations with Green-Kubo method. We find minimum thermal conductivity of perfect Bi2Te3 thin films with three quintuple layers (QLs) at room temperature, and we believe it originates from the interplay between inter-quintuple coupling and phonon boundary scattering. Nanoporous films and nanoribbons are studied for additional phonon scattering channels in suppressing thermal conductivity. With 5% porosity in Bi2Te3 thin films, the thermal conductivity is found to decrease by a factor of 4–6, depending on temperature, comparing to perfect single QL. For nanoribbons, width and edge shape are found to strongly affect the temperature dependence as well as values of thermal conductivity.

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Surface and grain boundary scattering in nanometric Cu thin films: A quantitative analysis including twin boundaries

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4894453 ◽

2014 ◽

Vol 32 (6) ◽

pp. 061503 ◽

Cited By ~ 31

Author(s):

Katayun Barmak ◽

Amith Darbal ◽

Kameswaran J. Ganesh ◽

Paulo J. Ferreira ◽

Jeffrey M. Rickman ◽

...

Keyword(s):

Thin Films ◽

Quantitative Analysis ◽

Grain Boundary ◽

Boundary Scattering ◽

Twin Boundaries ◽

Grain Boundary Scattering

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Effects Of Grain Boundaries on the Resistivity of Cosputtered Wsi2 Films

MRS Proceedings ◽

10.1557/proc-10-351 ◽

1981 ◽

Vol 10 ◽

Cited By ~ 3

Author(s):

D. R. Campbell ◽

S. Mader ◽

W. K. Chu

Keyword(s):

Thin Films ◽

Grain Size ◽

Reflection Coefficient ◽

Grain Boundary ◽

Grain Boundaries ◽

Charge Carriers ◽

Boundary Scattering ◽

Grain Boundary Scattering

ABSTRACTResistivity and grain size measurements on thin films of co-sputtered WSi2 show that the resistivity in this material is dominated by grain boundary scattering. The reflection coefficient for the transport of charge carriers through the grain boundaries was determined to be approximately 0.9.

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