scholarly journals High-temperature stability of thermoelectric Ca3Co4O9 thin films

2015 ◽  
Vol 106 (14) ◽  
pp. 143903 ◽  
Author(s):  
P. Brinks ◽  
N. Van Nong ◽  
N. Pryds ◽  
G. Rijnders ◽  
M. Huijben
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Temperature Stability ◽  
High Temperature Stability

High temperature stability of indium tin oxide thin films

2002 ◽  
Vol 406 (1-2) ◽  
pp. 286-293 ◽  
Author(s):  
Otto J. Gregory ◽  
Qing Luo ◽  
Everett E. Crisman
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Oxide Thin Films

scholarly journals High Temperature Behavior of RuAl Thin Films on Piezoelectric CTGS and LGS Substrates

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1605 ◽  
Author(s):  
Marietta Seifert
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Cross Sections ◽  
Barrier Layer ◽  
High Vacuum ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Si Substrates ◽  
20 Nm

This paper reports on a significant further improvement of the high temperature stability of RuAl thin films (110 nm) on the piezoelectric Ca 3 TaGa 3 Si 2 O 14 (CTGS) and La 3 Ga 5 SiO 14 (LGS) substrates. RuAl thin films with AlN or SiO 2 cover layers and barriers to the substrate (each 20 nm), as well as a combination of both were prepared on thermally oxidized Si substrates, which serve as a reference for fundamental studies, and the piezoelectric CTGS, as well as LGS substrates. In some films, additional Al layers were added. To study their high temperature stability, the samples were annealed in air and in high vacuum up to 900 °C, and subsequently their cross-sections, phase formation, film chemistry, and electrical resistivity were analyzed. It was shown that on thermally oxidized Si substrates, all films were stable after annealing in air up to 800 °C and in high vacuum up to 900 °C. The high temperature stability of RuAl thin films on CTGS substrates was improved up to 900 °C in high vacuum by the application of a combined AlN/SiO 2 barrier layer and up to 800 °C in air using a SiO 2 barrier. On LGS, the films were only stable up to 600 °C in air; however, a single SiO 2 barrier layer was sufficient to prevent oxidation during annealing at 900 °C in high vacuum.

The High Temperature Stability and Relaxation of UHV/CVD SiGe Thin Films

1992 ◽  
Vol 280 ◽  
Author(s):  
S. R. Stiffler ◽  
C. L. Stanis ◽  
M. S. Goorsky ◽  
K. K. Chan
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Misfit Dislocation ◽  
Stability Criterion ◽  
Temperature Stability ◽  
Dislocation Nucleation ◽  
Misfit Dislocations ◽  
High Temperature Stability ◽  
Nucleation Barrier ◽  
The Stability

ABSTRACT:: High temperature (950°C) annealing is used to stimulate relaxation in UHV/CVD SiGe thin films. It is found that the films are stable to thicknesses which exceed the stability criterion of Matthews and Blakeslee [1] by a small amount. In unstable films, the misfit dislocation density increases with annealing time, reaching a maximum value. For films which exceed the empirical stability criterion by a relatively small amount, the misfit dislocations relax the film to a strain given by the film thickness and the empirical stability criterion. However, large remnant strains are observed when the relaxation process introduces relatively high dislocation densities (≳5 misfits/micron). Associated with large remnant strains are a marked propensity for dislocation banding and looping deep into the substrate with extended annealing. These results are discussed with respect to the magnitude of the misfit dislocation nucleation barrier and the energy associated with interactions among misfit dislocations.

Dispersion of Dielectric Permittivity in Thin Ferroelectric Lead Titanate Films

2006 ◽  
Vol 115 ◽  
pp. 233-238 ◽  
Author(s):  
S. Sidorkin ◽  
L.P. Nesterenko ◽  
I.A. Bocharova ◽  
G.L. Smirnov ◽  
V.A. Sidorkin ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Dielectric Constant ◽  
High Temperature ◽  
Dielectric Permittivity ◽  
Magnetron Sputtering ◽  
Lead Titanate ◽  
Hysteresis Loops ◽  
Temperature Stability ◽  
High Temperature Stability

Lead titanate thin films were obtained by plasma-enhanced magnetron sputtering. Synthesized films demonstrate high temperature stability, relatively narrow maximum at temperature of phase transition for ε (T ) dependence, great dielectric constant value near the Curie point, saturated hysteresis loops, and relaxation character for dispersion of dielectric permittivity similar to bulk samples.

UNS N06455

Alloy Digest ◽  
1989 ◽  
Vol 38 (1) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Stress Corrosion Cracking ◽  
Temperature Stability ◽  
Heat Treating ◽  
High Ductility ◽  
High Temperature Stability ◽  
Nickel Chromium ◽  
Long Time ◽  
Resistance To Stress

Abstract UNS NO6455 is a nickel-chromium-molybdenum alloy with outstanding high-temperature stability as shown by high ductility and corrosion resistance even after long-time aging in the range 1200-1900 F. The alloy also has excellent resistance to stress-corrosion cracking and to oxidizing atmospheres up to 1900 F. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Ni-367. Producer or source: Nickel and nickel alloy producers.

UNS R54620

Alloy Digest ◽  
1987 ◽  
Vol 36 (7) ◽  
Keyword(s):  
Titanium Alloy ◽  
High Temperature ◽  
Time Use ◽  
Temperature Stability ◽  
High Strength ◽  
Heat Treating ◽  
High Temperature Stability ◽  
Beta Titanium Alloy ◽  
Beta Titanium ◽  
Long Time

Abstract UNS No. R54620 is an alpha-beta titanium alloy. It has an excellent combination of tensile strength, creep strength, toughness and high-temperature stability that makes it suitable for service to 1050 F. It is recommended for use where high strength is required. It has outstanding advantages for long-time use at temperatures to 800 F. This datasheet provides information on composition, physical properties, elasticity, tensile properties, and bend strength as well as creep. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Ti-86. Producer or source: Titanium alloy mills.

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