scholarly journals Evolution of surface morphology and optical transmittance of single crystal diamond film by epitaxial growth

AIP Advances ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 095048 ◽  
Author(s):  
Zhengqiang Zhang ◽  
Yatong Song ◽  
Li Gou
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Diamond Film ◽  
Optical Transmittance ◽  
Single Crystal Diamond

Epitaxial Growth of Diamond by In-Liquid Plasma CVD Method

2017 ◽  
Vol 749 ◽  
pp. 211-216
Author(s):  
Pria Gautama ◽  
Hiromichi Toyota ◽  
Xia Zhu ◽  
Yukiharu Iwamoto ◽  
Shinfuku Nomura ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Diamond Film ◽  
High Speed ◽  
Microwave Plasma ◽  
Plasma Cvd ◽  
Tungsten Electrode ◽  
Experimental Conditions ◽  
Single Crystal Diamond ◽  
Microwave Plasma Cvd

Currently, novel method to synthesize diamond film on material substrate called as in-liquid microwave plasma CVD (IL-MPCVD) has been achieved. It has been studied and improved in addition expected as new method instead of conventional gas phase microwave plasma CVD (MPCVD). The purpose of this study is to synthesize single crystal diamond using IL-MPCVD in high speed deposition. The experimental conditions, methanol was poured in to the reactor. Each of diamond particles (100) and (111) was embedded on the stainless steel substrates (SUS632J2). It was mounted to the substrate holder of in-liquid plasma equipment and installed on the top cover. The distance between the tip of the electrode and the substrate was kept to 1.5mm. A microwave of 2.45GHz was irradiated into the quartz glass tube reactor from the rectangular cavity resonator with 4 mm diameter tungsten electrode and the plasma was generated at its tip. The microwave was adjusted in appropriate power to maintain a certain substrate temperature. Diamond films were evaluated by Raman spectroscopy, Scanning Electron Microscope (SEM) and Laser Microscope (LM). As a result, the best orientation for epitaxial growth was found to be (100) which have film growth gradually and smooth surface. Whereas (111) face has polycrystalline film with irregularity growth and rough surface. The remaining H and C after CO synthesis satisfying H/C>20 is necessary to synthesized diamond using IL-MPCVD. The deposition rate was about 32 μm/h when both single crystal and polycrystalline diamond film were synthesized.

scholarly journals Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5964
Author(s):  
Guoqing Shao ◽  
Juan Wang ◽  
Shumiao Zhang ◽  
Yanfeng Wang ◽  
Wei Wang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Cross Section ◽  
Growth Model ◽  
Diamond Growth ◽  
Step Flow ◽  
Homoepitaxial Growth ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Step Flow Growth

Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.

Palladium Ohmic contact on hydrogen-terminated single crystal diamond film

2015 ◽  
Vol 59 ◽  
pp. 90-94 ◽  
Author(s):  
W. Wang ◽  
C. Hu ◽  
F.N. Li ◽  
S.Y. Li ◽  
Z.C. Liu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Diamond Film ◽  
Ohmic Contact ◽  
Single Crystal Diamond

scholarly journals Homo-epitaxial growth of single crystal diamond in the purified environment by active O atoms

Vacuum ◽  
2018 ◽  
Vol 155 ◽  
pp. 391-397 ◽  
Author(s):  
Jinlong Liu ◽  
Liangzhen Lin ◽  
Yun Zhao ◽  
Yuting Zheng ◽  
Kang An ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Single Crystal Diamond

Measurement of charge carrier's transportation in a large size self-standing CVD single crystal diamond film fabricated using lift-off method

2010 ◽  
Vol 19 (2-3) ◽  
pp. 162-165 ◽  
Author(s):  
F. Fujita ◽  
A. Kakimoto ◽  
J.H. Kaneko ◽  
N. Tsubouchi ◽  
Y. Mokuno ◽  
...  
Keyword(s):  
Single Crystal ◽  
Diamond Film ◽  
Large Size ◽  
Single Crystal Diamond ◽  
Lift Off

Surface morphology analysis of natural single crystal diamond chips bombarded with Ar+ ion beam

Vacuum ◽  
2010 ◽  
Vol 84 (12) ◽  
pp. 1423-1426 ◽  
Author(s):  
Takashi Nagase ◽  
Hiroyuki Kato ◽  
Shahjada A. Pahlovy ◽  
Iwao Miyamoto
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Ion Beam ◽  
Morphology Analysis ◽  
Single Crystal Diamond

scholarly journals Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 91 ◽  
Author(s):  
Xiwei Wang ◽  
Peng Duan ◽  
Zhenzhong Cao ◽  
Changjiang Liu ◽  
Dufu Wang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Microwave Plasma ◽  
High Stress ◽  
Central Area ◽  
Chemical Vapor ◽  
Movement Direction ◽  
Average Growth ◽  
Step Flow ◽  
Single Crystal Diamond

The diamond mosaic grown on the single-crystal diamond substrates by the microwave plasma chemical vapor deposition (MPCVD) method has been studied. The average growth rate was about 16–17 μm/h during 48 hours’ growth. The surface morphologies of the as-grown diamond layer were observed. It was found that the step flow was able to move across the substrates and cover the junction interface. Raman spectroscopic mapping in the central area of the junction revealed the high stress region movement across the junction interface from one substrate to the other for about 200–400 μm. High-resolution X-ray diffractometry (HRXRD) results proved that the surface step flow movement direction had nothing to do with the off-axis directions of the original substrates. It was found that the surface height difference of substrate was the main driving force for the step flow movement, junction combination and surface morphology changing. The mechanism of the mosaic interface junction combination and step flow transformation on the mosaic surface was proposed.

Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers

Carbon ◽  
2021 ◽  
Vol 172 ◽  
pp. 463-473 ◽  
Author(s):  
Rozita Rouzbahani ◽  
Shannon S. Nicley ◽  
Danny E.P. Vanpoucke ◽  
Fernando Lloret ◽  
Paulius Pobedinskas ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Methane Concentration ◽  
Boron Doped ◽  
Single Crystal Diamond

Effect of Growth Parameters on Single Crystal Diamond Deposition by DC Arc Plasma Jet CVD

2012 ◽  
Vol 490-495 ◽  
pp. 3094-3099 ◽  
Author(s):  
Li Fu Hei ◽  
Jie Liu ◽  
Fan Xiu Lu ◽  
Cheng Ming Li ◽  
Jian Hua Song ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Single Crystal ◽  
Growth Parameters ◽  
Plasma Jet ◽  
Typical Feature ◽  
Arc Plasma ◽  
Diamond Sample ◽  
Single Crystal Diamond ◽  
Dc Arc

Homoepitaxial diamond layers were grown on commercial 3.5 x 3.5 x 1.2 mm3 HPHT synthetic type Ib (100) single crystal diamond plates using a DC Arc Plasma Jet CVD operating at gas recycling mode. The effects of substrate temperature and CH4/H2 ratio on the surface morphology, the growth rate and the quality of the synthesized diamond have been studied using optical microscopy and Raman spectroscopy. With no intentional nitrogen added, the growth rate up to 12.3µm/h has been obtained in the single crystal diamond sample deposited at 1000 °C with CH4/H2=0.625%, exhibiting relatively smooth surface morphology without any growth hillocks nor non-epitaxial crystallites, and presenting the typical feature of the epitaxial step-flow growth. The full width at half maximum (FWHM) of the Raman spectra was 2.08 cm-1, which was close to that of the natural type IIa single crystal diamond.

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