Low-voltage complementary inverters using solution-processed, high-mobility organic single-crystal transistors fabricated by polymer-blend printing

2020 ◽  
Vol 117 (3) ◽  
pp. 033301 ◽  
Author(s):  
Taiki Sawada ◽  
Tatsuyuki Makita ◽  
Akifumi Yamamura ◽  
Mari Sasaki ◽  
Yasunari Yoshimura ◽  
...  
2015 ◽  
Vol 22 ◽  
pp. 1-4 ◽  
Author(s):  
S. Sakai ◽  
J. Soeda ◽  
R. Häusermann ◽  
H. Matsui ◽  
C. Mitsui ◽  
...  

Nano Research ◽  
2017 ◽  
Vol 11 (2) ◽  
pp. 882-891 ◽  
Author(s):  
Liang Wang ◽  
Xiujuan Zhang ◽  
Gaole Dai ◽  
Wei Deng ◽  
Jiansheng Jie ◽  
...  

2019 ◽  
Vol 117 (1) ◽  
pp. 80-85 ◽  
Author(s):  
Tatsuyuki Makita ◽  
Shohei Kumagai ◽  
Akihito Kumamoto ◽  
Masato Mitani ◽  
Junto Tsurumi ◽  
...  

Thin film transistors (TFTs) are indispensable building blocks in any electronic device and play vital roles in switching, processing, and transmitting electronic information. TFT fabrication processes inherently require the sequential deposition of metal, semiconductor, and dielectric layers and so on, which makes it difficult to achieve reliable production of highly integrated devices. The integration issues are more apparent in organic TFTs (OTFTs), particularly for solution-processed organic semiconductors due to limits on which underlayers are compatible with the printing technologies. We demonstrate a ground-breaking methodology to integrate an active, semiconducting layer of OTFTs. In this method, a solution-processed, semiconducting membrane composed of few-molecular-layer–thick single-crystal organic semiconductors is exfoliated by water as a self-standing ultrathin membrane on the water surface and then transferred directly to any given underlayer. The ultrathin, semiconducting membrane preserves its original single crystallinity, resulting in excellent electronic properties with a high mobility up to 12cm2⋅V−1⋅s−1. The ability to achieve transfer of wafer-scale single crystals with almost no deterioration of electrical properties means the present method is scalable. The demonstrations in this study show that the present transfer method can revolutionize printed electronics and constitute a key step forward in TFT fabrication processes.


2008 ◽  
Vol 1091 ◽  
Author(s):  
Jun Takeya ◽  
M. Yamagishi ◽  
Y. Tominari ◽  
Y. Iwasaki ◽  
M. Uno

AbstractWe report a series of our experiments using organic single crystals to reach the maximum performance intrinsic to the materials. A consequence of the experiments is that a prescription for realizing high-mobility devices is to induce carriers in inner crystals to avoid scattering at the surfaces. Intrinsic-semiconductor character of the high-purity organic crystals favors thermal diffusion of the carriers into the crystals in the presence of weak gate-electric fields. Furthermore, it is demonstrated that the high-mobility transport of the in-crystal carriers are highlighted in double-gate single-crystal transistors with the two gate electric field balanced with each other.


2018 ◽  
Vol 1 (1) ◽  
Author(s):  
Shun Watanabe ◽  
Hirotaka Sugawara ◽  
Roger Häusermann ◽  
Balthasar Blülle ◽  
Akifumi Yamamura ◽  
...  

1999 ◽  
Vol 11 (16) ◽  
pp. 1372-1375 ◽  
Author(s):  
C. D. Dimitrakopoulos ◽  
I. Kymissis ◽  
S. Purushothaman ◽  
D. A. Neumayer ◽  
P. R. Duncombe ◽  
...  

2010 ◽  
Vol 20 (3) ◽  
pp. 524-530 ◽  
Author(s):  
Dae Sung Chung ◽  
Jong Won Park ◽  
Jong-Hwa Park ◽  
Dohyun Moon ◽  
Ghyung Hwa Kim ◽  
...  

AIP Advances ◽  
2011 ◽  
Vol 1 (2) ◽  
pp. 022149 ◽  
Author(s):  
Yun Li ◽  
Chuan Liu ◽  
Akichika Kumatani ◽  
Peter Darmawan ◽  
Takeo Minari ◽  
...  

2008 ◽  
Vol 93 (2) ◽  
pp. 023303 ◽  
Author(s):  
Takafumi Kawanishi ◽  
Takaaki Fujiwara ◽  
Megumi Akai-Kasaya ◽  
Akira Saito ◽  
Masakazu Aono ◽  
...  

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Akichika Kumatani ◽  
Chuan Liu ◽  
Yun Li ◽  
Peter Darmawan ◽  
Kazuo Takimiya ◽  
...  

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