scholarly journals Coupled time resolved and high frequency modulated photoluminescence probing surface passivation of highly doped n-type InP samples

2021 ◽  
Vol 129 (21) ◽  
pp. 215305
Author(s):  
Wei Zhao ◽  
Baptiste Bérenguier ◽  
Cendra Rakotoarimanana ◽  
Anne-Marie Gonçalves ◽  
Arnaud Etcheberry ◽  
...  

2015 ◽  
Vol 55 (1) ◽  
pp. 016101 ◽  
Author(s):  
Anil Pandey ◽  
Wataru Sakakibara ◽  
Hiroyuki Matsuoka ◽  
Keiji Nakamura ◽  
Hideo Sugai


2006 ◽  
Vol 19 (6) ◽  
pp. 667-670 ◽  
Author(s):  
A Lucarelli ◽  
G Lüpke ◽  
T J Haugan ◽  
G A Levin ◽  
P N Barnes


2019 ◽  
Vol 669 ◽  
pp. 520-524
Author(s):  
Baptiste Bérenguier ◽  
Nicolas Barreau ◽  
Alexandre Jaffre ◽  
Daniel Ory ◽  
Jean-François Guillemoles ◽  
...  






2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Weifang Lu ◽  
Abebe T. Tarekegne ◽  
Yiyu Ou ◽  
Satoshi Kamiyama ◽  
Haiyan Ou

Abstract A comprehensive study of surface passivation effect on porous fluorescent silicon carbide (SiC) was carried out to elucidate the luminescence properties by temperature dependent photoluminescence (PL) measurement. The porous structures were prepared using an anodic oxidation etching method and passivated by atomic layer deposited (ALD) Al2O3 films. An impressive enhancement of PL intensity was observed in porous SiC with ALD Al2O3, especially at low temperatures. At temperatures below 150 K, two prominent PL emission peaks located at 517 nm and 650 nm were observed. The broad emission peak at 517 nm was attributed to originate from the surface states in the porous structures, which was supported by X-ray photoelectron spectra characterization. The emission peak at 650 nm is due to donor-acceptor-pairs (DAP) recombination via nitrogen donors and boron-related double D-centers in fluorescent SiC substrates. The results of the present work suggest that the ALD Al2O3 films can effectively suppress the non-radiative recombination for the porous structures on fluorescent SiC. In addition, we provide the evidence based on the low-temperature time-resolved PL that the mechanism behind the PL emission in porous structures is mainly related to the transitions via surface states.



The Analyst ◽  
2014 ◽  
Vol 139 (20) ◽  
pp. 5271-5282 ◽  
Author(s):  
Verena Charwat ◽  
Martin Joksch ◽  
Drago Sticker ◽  
Michaela Purtscher ◽  
Mario Rothbauer ◽  
...  

High-frequency impedance spectroscopy combined with time resolved biomarker quantification and multivariate data analysis enables sensitive monitoring of cell population dynamics.



2006 ◽  
Vol 946 ◽  
Author(s):  
Andrea Lucarelli ◽  
Alexander Frey ◽  
Ran Yang ◽  
Gunter Luepke ◽  
Timothy J Haugan ◽  
...  

ABSTRACTWe present a time-resolved magneto-optical (MO) imaging study of high-temperature superconductor (HTS) in high-frequency alternating current (AC) regime. The evolution of the magnetic flux density distribution in YBa2Cu3O7-d (YBCO) thin film samples is studied in small steps of the phase of the applied AC current. The flux distribution at 10 K exhibits instabilities including flux jumps and flux creep. A quantitative analysis of the data allows us to obtain the current density evolution. The current profile changes considerably with the phase differently from the prediction of the critical state model. These observations can be explained by the higher self-field at the sample edge and the effects of flux creep.



2014 ◽  
Vol 54 ◽  
pp. 71-84 ◽  
Author(s):  
J.M. Fernández Oro ◽  
K.M. Argüelles Díaz ◽  
M. Rodríguez Lastra ◽  
M. Galdo Vega ◽  
B. Pereiras García


Sign in / Sign up

Export Citation Format

Share Document