Effect of thermal aging on electromigration failure of a flip-chip SnAgCu solder joint subjected to random vibration

2021 ◽  
Author(s):  
Mohammad Abdul Motalab ◽  
Md. Tusher Ahmed ◽  
Md. Omarsany Bappy
2014 ◽  
Vol 54 (5) ◽  
pp. 939-944 ◽  
Author(s):  
Ye Tian ◽  
Xi Liu ◽  
Justin Chow ◽  
Yi Ping Wu ◽  
Suresh K. Sitaraman

Author(s):  
T. E. Wong ◽  
H. S. Fenger

The objectives of the present studies are to design and test representative commercial off-the-shelf plastic encapsulated microcircuits, including various types of ball grid array (BGA) components, chip scale package, flip chip, lead flat pack, and leadless capacitor, over military random vibration levels. The approach is to demonstrate the solder joint reliability performance of these components through the design of an electrical daisy-chain pattern printed wiring board (PWB) assembly test vehicle (TV), in which the design and manufacturing variables are included. The three variables, including BGA underfilled materials, solder pad sizes on PWB, and BGA rework, with each having either two or three levels of variation are used to address test criteria and to construct 14 different types of TV configurations. All TV configurations are then subjected to random vibration tests while continuously monitoring solder joint integrity. Based on the measured results, a destructive physical analysis is then conducted to further isolate the failure locations and determine the failure mechanisms of the solder joints. Test results indicate that the 352-pin tape BGA and 600-pin super BGA are more susceptible to failure than plastic BGAs under the same conditions, and that the use of underfilled materials appears to improve the life expectancy of all the components. The stiffer packages of tape BGA and super BGA, which have copper heat spreaders, may account for higher BGA solder joint stress/strain during random vibration tests. Test data also shows that only a limited number of electrical opening are observed. This indicates that the test modules are robust enough to survive the random vibration inputs. One possible reason is that the test modules are very stiff, whose 1st mode of natural frequency is about 550 Hz. Therefore, the curvature changes of the test modules are minimal, which resulted in smaller relative motion between the package and the PWB, and less solder joint stresses. All these test results are recommended to be used for calibrating BGA solder joint vibration fatigue life prediction models, which will be presented in other publications.


2009 ◽  
Vol 6 (3) ◽  
pp. 149-153 ◽  
Author(s):  
Sean M. Chinen ◽  
Matthew T. Siniawski

The purpose of this paper is to provide an overview of SnAgCu solder joint fatigue in BGA/CSP/flip-chip applications and the concern of long-term reliability. The most common mode of failure is ductile fracture due to creep strain. Several methods of predicting the overall life of the solder joint are the Coffin-Manson approach, a constitutive fatigue law, and a damage based model using FEM (finite element methods). The effects of underfill and its processes as well as design considerations that will increase reliability will also be discussed.


2003 ◽  
Vol 18 (6) ◽  
pp. 1333-1341 ◽  
Author(s):  
F. Zhang ◽  
M. Li ◽  
C. C. Chum ◽  
C-H. Tung

Effects of Ni and Au from Ni/Au substrate metallizations on the interfacial reactions of solder joints in flip-chip packages during long-term thermal aging were systematically investigated. It was found that both Au and Ni influenced the solid-state interfacial reactions, underbump metallization (UBM), and intermetallic compound (IMC) evolution. Because large amounts of Ni could incorporate into IMC to form a multicomponent (Cu, Ni)6Sn5 phase during assembly reflow, while Au could only affect the reaction during thermal aging through the reconfiguration of AuSn4 phase, Ni had stronger effects on solid-solution type Ni–V UBM consumption than Au. It was found that the UBM consumption process was faster in the eutectic SnPb solder system than that in the SnAgCu solder system during aging. A porous structure was formed in the UBM layer after Ni in UBM was consumed. Electrical resistance of flip-chip packages increased significantly after the porous structure reached certain extents. The results showed that the diffusion process of Ni from UBM and Sn from solder in the presence of (Cu, Ni)6Sn5 or (Ni, Cu)3Sn4 phase at solder joint interfaces could be much faster than that in the case of binary Cu6Sn5 or Ni3Sn4 IMC.


2007 ◽  
Vol 47 (12) ◽  
pp. 2161-2168 ◽  
Author(s):  
Weiqun Peng ◽  
Eduardo Monlevade ◽  
Marco E. Marques

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Jianing Wang ◽  
Jieshi Chen ◽  
Zhiyuan Zhang ◽  
Peilei Zhang ◽  
Zhishui Yu ◽  
...  

Purpose The purpose of this article is the effect of doping minor Ni on the microstructure evolution of a Sn-xNi (x = 0, 0.05 and 0.1 wt.%)/Ni (Poly-crystal/Single-crystal abbreviated as PC Ni/SC Ni) solder joint during reflow and aging treatment. Results showed that the intermetallic compounds (IMCs) of the interfacial layer of Sn-xNi/PC Ni joints were Ni3Sn4 phase, while the IMCs of Sn-xNi/SC Ni joints were NiSn4 phase. After the reflow process and thermal aging of different joints, the growth behavior of interfacial layer was different due to the different mechanism of element diffusion of the two substrates. The PC Ni substrate mainly provided Ni atoms through grain boundary diffusion. The Ni3Sn4 phase of the Sn0.05Ni/PC Ni joint was finer, and the diffusion flux of Sn and Ni elements increased, so the Ni3Sn4 layer of this joint was the thickest. The SC Ni substrate mainly provided Ni atoms through the lattice diffusion. The Sn0.1Ni/SC Ni joint increases the number of Ni atoms at the interface due to the doping of 0.1Ni (wt.%) elements, so the joint had the thickest NiSn4 layer. Design/methodology/approach The effects of doping minor Ni on the microstructure evolution of an Sn-xNi (x = 0, 0.05 and 0.1 Wt.%)/Ni (Poly-crystal/Single-crystal abbreviated as PC Ni/SC Ni) solder joint during reflow and aging treatment was investigated in this study. Findings Results showed that the intermetallic compounds (IMCs) of the interfacial layer of Sn-xNi/PC Ni joints were Ni3Sn4 phase, while the IMCs of Sn-xNi/SC Ni joints were NiSn4 phase. After the reflow process and thermal aging of different joints, the growth behavior of the interfacial layer was different due to the different mechanisms of element diffusion of the two substrates. Originality/value In this study, the effect of doping Ni on the growth and formation mechanism of IMCs of the Sn-xNi/Ni (single-crystal) solder joints (x = 0, 0.05 and 0.1 Wt.%) was investigated.


2006 ◽  
Vol 504 (1-2) ◽  
pp. 426-430 ◽  
Author(s):  
Dae-Gon Kim ◽  
Jong-Woong Kim ◽  
Seung-Boo Jung

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