Band alignment engineering of a Ruddlesden–Popper perovskite-based heterostructure constructed using Cs2SnI2Cl2 and α-In2Se3: The effects of ferroelectric polarization switching and electric fields

2021 ◽  
Vol 119 (18) ◽  
pp. 182903
Author(s):  
Cheng-Sheng Liao ◽  
Yu-Feng Ding ◽  
Yu-Qing Zhao ◽  
Meng-Qiu Cai
1963 ◽  
Vol 18 (8) ◽  
pp. 1229-1230 ◽  
Author(s):  
Ichiro Hatta ◽  
Shozo Sawada ◽  
Yohko Asao ◽  
Taketoshi Yanagi

2015 ◽  
Vol 24 (01n02) ◽  
pp. 1520003
Author(s):  
M. Pakmehr ◽  
C. Brüne ◽  
H. Buhmann ◽  
L. W. Molenkamp ◽  
B. D. McCombe

HgTe quantum wells with a gapped single Dirac cone electronic dispersion relation have been investigated by THz magneto-photoresponse (PR) and magneto-transport measurements. The QW sample has the conventional band alignment with the well thickness (6.1 nm) slightly smaller than the critical thickness for the topological phase transition. The effective gap of this structure is roughly 10 meV, and the large sheet density ([Formula: see text] m-2) of the two-dimensional electron gas (2DEG) results in a very large Fermi energy ([Formula: see text] meV). We have found several interesting effects at these high densities. In this paper we focus on an observed beating of quantum oscillations in the PR signal (at 1.83 THz) and compare it with direct measurements of oscillations in the longitudinal magneto-resistance (Rxx). The mechanism for the PR is cyclotron resonance absorption heating of the electrons (an electron bolometric effect). We attribute the beating to Rashba splitting of the spin states, which is barely observable in direct Rxx measurements under strong gate-induced electric fields.


2021 ◽  
Vol 9 ◽  
Author(s):  
Qian Wang ◽  
Lin Zhang ◽  
Xuejuan Liu ◽  
Sha Li

Two-dimensional (2D) layered semiconductors are current research hotspots on account of their wide variety of applications in electronics and optoelectronics due to their particular ultrathin nature. In this review, the band alignment engineering in heterojunctions composed of 2D van der Waals (vdW) layered semiconductors and their device applications in optoelectronics are provided. Various approaches that induced adjustability of vdW heterojunctions are summarized, mainly including composition and thickness modulations, strain, and electric fields. Furthermore, their perspectives on future developments in optoelectronics and electronics devices based on the newly unique physical and chemical properties are outlined.


2020 ◽  
Vol 8 (13) ◽  
pp. 4534-4541 ◽  
Author(s):  
Zheng Li ◽  
Baozeng Zhou

A model of atom-thick multiferroic memory whose data writing depends on ferroelectric CuInP2S6 and data reading is based on different electric signals induced by magnetoelectrical coupling.


2020 ◽  
Vol 24 (01n03) ◽  
pp. 33-42
Author(s):  
Maria J. Mayoral ◽  
Tomás Torres ◽  
David González-Rodríguez

In this small review article, we provide an overview of the different self-assembled systems and materials created so far by rationally organizing fluorosubphthalocyanines in a non-centrosymmetric fashion, which allows access to novel polarly ordered liquid crystalline materials that can be aligned in the presence of electric fields and that exhibit permanent or switchable ([Formula: see text] ferroelectric) polarization.


2021 ◽  
Author(s):  
Jing Shang ◽  
Congxin Xia ◽  
Chun Tang ◽  
Chun Li ◽  
Yandong Ma ◽  
...  

Two-dimensional ferroelectrics are core candidates for the development of next-generation non-volatile storage devices, which rely highly on ferroelectric stability and feasible approaches to manipulate the ferroelectric polarization and domain.


Sign in / Sign up

Export Citation Format

Share Document