Understanding pulsed laser deposition process of copper halides via plasma diagnostics techniques

2021 ◽  
Vol 130 (24) ◽  
pp. 243302
Author(s):  
Stefan Andrei Irimiciuc ◽  
Sergii Chertopalov ◽  
Michal Novotný ◽  
Valentin Craciun ◽  
Jan Lancok
Keyword(s):  
Pulsed Laser Deposition ◽  
Plasma Diagnostics ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Copper Halides

Effects of Single-Crystalline GaN Target on GaN Thin Films in Pulsed Laser Deposition Process

2005 ◽  
Vol 44 (11) ◽  
pp. 7896-7900 ◽  
Author(s):  
Takahiro Nagata ◽  
Young-Zo Yoo ◽  
Parhat Ahmet ◽  
Toyohiro Chikyow
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Single Crystalline

Pulsed laser deposition process of PLZT thin films using an infrared Nd:YAG laser

2006 ◽  
Vol 252 (10) ◽  
pp. 3783-3788 ◽  
Author(s):  
T. García ◽  
E. de Posada ◽  
P. Bartolo-Pérez ◽  
J.L. Peña ◽  
R. Diamant ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Nd:Yag Laser ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Plzt Thin Films

New developments of pulsed-laser deposition process

1998 ◽  
Author(s):  
Tatsuo Okada ◽  
Yoshiki Nakata ◽  
Junichi Muramoto ◽  
Mitsuo Maeda
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
New Developments

Cross-Sectional Nanoindentation of Alumina Thin Films Deposited by Pulsed Laser Deposition Process

2006 ◽  
Author(s):  
Sudheer Neralla ◽  
Sergey Yarmolenko ◽  
Dhananjay Kumar ◽  
Devdas Pai ◽  
Jag Sankar
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Hardness ◽  
Deposition Process ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Adhesion Properties ◽  
Force Microscopy ◽  
Atomic Force

Alumina is a widely used ceramic material due to its high hardness, wear resistance and dielectric properties. The study of phase transformation and its correlation to the mechanical properties of alumina is essential. In this study, interfacial adhesion properties of alumina thin films are studied using cross-sectional nanoindentation (CSN) technique. Alumina thin films are deposited at 200 and 700 °C, on Si (100) substrates with a weak Silica interface, using pulsed laser deposition (PLD) process. Effect of annealing on the surface morphology of the thin films is studied using atomic force microscopy. Xray diffraction studies revealed that alumina thin films are amorphous in nature at 200 °C and polycrystalline with predominant gamma alumina phase at 700 °C.

Ionic liquid/ZnO(0001̄) single crystal and epitaxial film interfaces studied through a combination of electrochemical measurements and a pulsed laser deposition process under vacuum

2019 ◽  
Vol 21 (45) ◽  
pp. 25506-25512
Author(s):  
Mariko Kanai ◽  
Ko Watanabe ◽  
Shingo Maruyama ◽  
Yuji Matsumoto
Keyword(s):  
Ionic Liquid ◽  
Ionic Liquids ◽  
Pulsed Laser Deposition ◽  
Epitaxial Film ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Zno Films ◽  
Doped Zno ◽  
Mg Doped

O-Polar ZnO(0001̄) single crystals and ZnO and Mg-doped ZnO films which were subsequently deposited on the ZnO crystals by pulsed laser deposition were electrochemically investigated through the interfaces with ionic liquids in a vacuum.

High Throughput Optimization of Y-Type Magnetoplumbite Epitaxial thin Film Growth by Combinatorial Pulsed Laser Deposition Technique

2001 ◽  
Vol 700 ◽  
Author(s):  
I. Ohkubo ◽  
Y. Matsumoto ◽  
M. Ohtani ◽  
T. Hasegawa ◽  
K. Ueno ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Film Growth ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Thin Film Growth ◽  
Laser Deposition ◽  
Throughput Optimization ◽  
Tem Analysis ◽  
First Time

AbstractThin films of Y-type magnetoplumbite (Ba2Co2Fe12O22: Co2Y) with such a huge unit cell length as 43.5 Å has been successfully fabricated for the first time with the aid of combinatorial optimization of pulsed laser deposition process. Planning a thickness gradient CoO buffer layer on MgAl2O4(111) substrate was very effective for prevent the phase separation of Co deficient impurity (BaFe2O4) to reside in the formation of desired Co2Y phase.From the TEM analysis, the CoO buffer layer of optimum thickness was incorporated into the Co2Y film to make theinterface with the make an atomically sharp.

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