Are some strains of subterranean clover (T. subterraneum) highly susceptible to low temperature stress?

1980 ◽  
Vol 20 (103) ◽  
pp. 197 ◽  
Author(s):  
RC Rossiter ◽  
WJ Collins
Keyword(s):  
Low Temperature ◽  
Temperature Stress ◽  
Growth Temperature ◽  
Temperature Effects ◽  
Subterranean Clover ◽  
The Other ◽  
Field Observations ◽  
Winter Dormancy ◽  
Plant Experiment ◽  
Temperature Interaction

Two experiments, one with spaced plants and the other with swards, were conducted in a controlled-temperature glasshouse at Perth, Western Australia. Three strains-Phillip Island, CPI 18293 and CPI 68043H-were selected on the basis of field observations of apparent very poor winter growth in rows, and tested against Tallarook as a control. The temperature treatments were 22/17� (day/night) and 12/7�C. In the spaced plant experiment (occupying the first 48 days of growth), temperature and strain effects were highly significant, but there was no indication of a strain x temperature interaction. In the sward experiment (from days 51 to 77) temperature effects were small; and in only one strain, Phillip Island, was the decline in tops growth due to low temperature greater (P< 0.05) than for Tallarook. The experiments failed to provide support for the so-called 'winter dormancy' phenomenon. Possible explanations for the discrepancy between the present findings and the field observations are given.

Incorporation of Silicon in Low Temperature Molecular Beam Epitaxial GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
M. O. Manasreh ◽  
K. R. Evans ◽  
C. E. Stutz ◽  
D. C Look ◽  
J. Hemsky
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Infrared Absorption ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Vibrational Mode ◽  
The Other ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Absorption Technique

ABSTRACTThe localized vibrational mode (LVM) of silicon donor (SiGa) in molecular beam epitaxial GaAs layers grown at various temperatures is studied using the infrared absorption technique. It is found that the total integrated absorption of this LVM is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si in GaAs layers grown at ∼200 °C. On the other hand, an almost complete substitutional incorporation is obtained in GaAs layers grown at temperatures higher that 350 °C. Thermal annealing does not cause any recovery of the SiGa LVMs in present GaAs layers grown at ∼200°C.

scholarly journals Yield, Physiological Performance, and Phytochemistry of Basil (Ocimum basilicum L.) under Temperature Stress and Elevated CO2 Concentrations

Plants ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1072
Author(s):  
T. Casey Barickman ◽  
Omolayo J. Olorunwa ◽  
Akanksha Sehgal ◽  
C. Hunt Walne ◽  
K. Raja Reddy ◽  
...  
Keyword(s):  
Low Temperature ◽  
Elevated Co2 ◽  
Temperature Stress ◽  
Growth Temperature ◽  
Intercellular Co2 Concentration ◽  
Net Photosynthesis ◽  
High Temperature Stress ◽  
Low Temperature Stress ◽  
Apparent Quantum Yield ◽  
Co2 Concentrations

Early season sowing is one of the methods for avoiding yield loss for basil due to high temperatures. However, basil could be exposed to sub-optimal temperatures by planting it earlier in the season. Thus, an experiment was conducted that examines how temperature changes and carbon dioxide (CO2) levels affect basil growth, development, and phytonutrient concentrations in a controlled environment. The experiment simulated temperature stress, low (20/12 °C), and high (38/30 °C), under ambient (420 ppm) and elevated (720 ppm) CO2 concentrations. Low-temperature stress prompted the rapid closure of stomata resulting in a 21% decline in net photosynthesis. Chlorophylls and carotenoids decreased when elevated CO2 interacted with low-temperature stress. Basil exhibited an increase in stomatal conductance, intercellular CO2 concentration, apparent quantum yield, maximum photosystem II efficiency, and maximum net photosynthesis rate when subjected to high-temperature stress. Under elevated CO2, increasing the growth temperature from 30/22 °C to 38/30 °C markedly increased the antioxidants content of basil. Taken together, the evidence from this research recommends that varying the growth temperature of basil plants can significantly affect the growth and development rates compared to increasing the CO2 concentrations, which mitigates the adverse effects of temperature stress.

Growth responses of cultivars of subterranean clover to temperature, plant density and nitrate supply

1990 ◽  
Vol 41 (1) ◽  
pp. 101 ◽  
Author(s):  
JH Silsbury ◽  
TW Hancock
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Plant Density ◽  
Subterranean Clover ◽  
Growth Conditions ◽  
High Density ◽  
Growth Responses ◽  
Mineral N ◽  
Nitrate Supply ◽  
Temperature Interaction

Six cultivars of subterranean clover were compared for growth as swards under controlled conditions in six separate experiments. Conditions common to all experiments were: 400 8mol quanta m-2 s-1 and 12 h day: 12 h night. The variable regimens were: 2 000 or 12 000 plants m-2 ('low' and 'high' density), 10 to 20�C; and no mineral N (0 mM) or N supplied as a 7.5 mM NO3- solution. Growth responses to these conditions were tested by sequential harvesting for dry matter and the fitting of linear and quadratic regression models. Special attention was given to testing for differential responses by cultivars to temperature. All cultivars except 'Woogenellup' grew about 20% faster when NO3- was supplied in the nutrient solution than when the N was derived entirely from N2 fixation under the 0mM treatment. Crop growth rate at 20�C was about double that at 10�C at low density, but at high density the rate at 20�C was 90-95% of that at 10�C. Cultivars differed significantly in growth rate but over all conditions, there was a hierarchical order from the highest to the lowest of: 'Clare', 'Woogenellup', 'Yarloop', 'Mt. Barker', 'Daliak' and 'Geraldton'. There was very little evidence of any cultivar by temperature interaction except for 'Woogenellup, which responded to a low temperature of 10�C compared with a 'high' of 20�C better than the other cultivars. The importance of seed size as a factor influencing the early growth of a subterranean clover sward was emphasized where swards established from large seeds of 'Mt. Barker' grew faster than where small seeds were used. 'Clare' was a highly productive cultivar under all growth conditions. It is concluded that the growth rates of swards of subterranean clover established at seedling densities in excess of 5000 plants m-2 are less sensitive to a low temperature of 10�C than are those established at more conventional densities.

Kinetics of α-chymotrypsin action. I. pH, solvent, and temperature effects

1967 ◽  
Vol 45 (5) ◽  
pp. 547-557 ◽  
Author(s):  
Harvey Kaplan ◽  
K. J. Laidler
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Temperature Effects ◽  
Methyl Esters ◽  
The Other ◽  
Kcal Mole ◽  
Influence Of Ph ◽  
Kinetics Of ◽  
Hydrolysis Of ◽  
Ph Variations

An investigation has been made of the influence of pH on the kinetics of the α-chymotrypsin-catalyzed hydrolysis of N-acetyl-l-tyrosine ethyl ester, p-nitrophenyl acetate, and N-benzoyl-d- and -l-alanine methyl esters. From the pH variations of [Formula: see text], and [Formula: see text], it is deduced that in the free enzyme there are ionizing groups of pK 6.9 and 9.2. From the variation of these pK values with dielectric constant, it is concluded that, when protonated, one group is cationic and the other neutral. A temperature-dependence study was carried out on N–benzoyl-d- and -l-alanine methyl esters. The sharp break in the plot of log [Formula: see text] against 1/T is attributed to a rapid reversible denaturation of the enzyme at the higher temperatures. In the low-temperature region, the activation energies are ΔEL = 16.2 ± 0.3 kcal/mole and ΔED = 16.5 ± 0.6 kcal/mole.

How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism

2007 ◽  
Vol 556-557 ◽  
pp. 187-190 ◽  
Author(s):  
Maher Soueidan ◽  
Olivier Kim-Hak ◽  
Gabriel Ferro ◽  
Patrick Chaudouët ◽  
Didier Chaussende ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Growth Temperature ◽  
General Rule ◽  
The Other ◽  
Heteroepitaxial Growth ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Mechanism ◽  
Si Content ◽  
Vapor Liquid

We report on the heteroepitaxial growth of 3C-SiC layers by Vapor-Liquid-Solid (VLS) mechanism on various α-SiC substrates, namely on- and off-axis for both 4H and 6H-SiC(0001), Si and C faces. The Si-Ge melts, which Si content was varied from 25 to 50 at%, were fed by 3 sccm of propane. The growth temperature was varied from 1200 to 1600°C. It was found that singledomain 3C-SiC layers can be obtained on 6H-SiC off and on-axis and 4H-SiC on-axis, while the other types of substrate gave twinned 3C-SiC material. As a general rule, one has to increase temperature when decreasing the Si content of the melt in order to avoid DPB formation. It was also found that twinned 3C-SiC layers form at low temperature while homoepitaxy is achieved at high temperature.

Effects of low-temperature stress on histone modification in ZF4 cells

2019 ◽  
Vol 26 (2) ◽  
pp. 280
Author(s):  
Penglei JIANG ◽  
Yingdi SHI ◽  
Yanwen HOU ◽  
Bingshe HAN ◽  
Junfang ZHANG
Keyword(s):  
Low Temperature ◽  
Histone Modification ◽  
Temperature Stress ◽  
Low Temperature Stress

Effects of low temperature stress on photosynthesis in potato leaves

2014 ◽  
Vol 39 (1) ◽  
pp. 26-30 ◽  
Author(s):  
Yu-zhi QIN ◽  
Jue CHEN ◽  
Zhen XING ◽  
Chang-zheng HE ◽  
Xing-yao XIONG
Keyword(s):  
Low Temperature ◽  
Temperature Stress ◽  
Low Temperature Stress

Temperature Effects during Endodormancy Induction on Subsequent Anthesis and Growth of Peach Trees

HortScience ◽  
1998 ◽  
Vol 33 (3) ◽  
pp. 452c-452 ◽  
Author(s):  
Schuyler D. Seeley ◽  
Raymundo Rojas-Martinez ◽  
James Frisby
Keyword(s):  
Temperature Effects ◽  
Shoot Length ◽  
The Other ◽  
Nighttime Temperatures ◽  
Peach Trees ◽  
Better Than

Mature peach trees in pots were treated with nighttime temperatures of –3, 6, 12, and 18 °C for 16 h and a daytime temperature of 20 °C for 8 h until the leaves abscised in the colder treatments. The trees were then chilled at 6 °C for 40 to 70 days. Trees were removed from chilling at 40, 50, 60, and 70 days and placed in a 20 °C greenhouse under increasing daylength, spring conditions. Anthesis was faster and shoot length increased with longer chilling treatments. Trees exposed to –3 °C pretreatment flowered and grew best with 40 days of chilling. However, they did not flower faster or grow better than the other treatments with longer chilling times. There was no difference in flowering or growth between the 6 and 12 °C pretreatments. The 18 °C pretreatment resulted in slower flowering and very little growth after 40 and 50 days of chilling, but growth was comparable to other treatments after 70 days of chilling.

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