scholarly journals Effect of Annealing and of Effect of Annealing and of Cooling Rates onn-GaAs Electrode Photoelectrochemical Characteristics

2004 ◽  
Vol 27 (2) ◽  
pp. 69-80 ◽  
Author(s):  
Hikmat S. Hilal ◽  
Subhi K. Salih ◽  
Iyad A. Sa'adeddin ◽  
Guy Campet

The effect of annealing of then-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densitiesvspotential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealedn-GaAs.The effect of the rate of cooling of heatedn-GaAs wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current densityvs. potential plots, for samples annealed below 600ºC. For samples annealed at higher temperatures, quenching gave better dark-current densityvspotential plots. Forn-GaAs, slowly cooled electrodes from temperatures below 600ºC showed better photocurrent densityvspotential plots and higher efficiency.n-GaAs samples, quenched from temperatures above 700ºC, showed better photocurrent densityvspotential plots and higher efficiency than their slowly cooled counterparts.

2016 ◽  
pp. 3488-3499
Author(s):  
Amal Mahmoud Alkahlout

Highly ordered microporous ZnO materials with crystalline structure were synthesized hydrothermally from three different Zn-precursorsnamely: Zinc-acetate, chloride, and nitrate. XRD investigations revealed that all the obtained powders have single phase zincite structure. The powder morphology was investigated by SEM which showed that the starting Zn-precursor affects the shape as well as the size of the obtained particles. A photoelectrodes fabricated using the three different synthesized microporous ZnO particles showed variation in photocurrent density (Jsc) dye loading and hence the efficiency with variation in structure texture, morphology and particle size.  DSSC built with photoelectrodes made from Zn-acetate has the highest efficiency (5.4%) which is attributed to having lowest particle size and largest surface area available for dye loading. This increases light harvesting at the photoelectrode which in turn increases short circuit current density. On the other hand, the lowest current density (5.65mA/cm2) is obtained for DSSC with photolelctrodes made from Zn-nitrate.


2021 ◽  
Vol 59 (3) ◽  
pp. 177-186
Author(s):  
Seung-Hwan Jeon ◽  
Hyunjin Jeong ◽  
Seongchan Bae ◽  
Hyukhyun Ryu ◽  
Won-Jae Lee

In this study, we deposited a WO3 thin-film photoelectrode on a fluorine-doped tin oxide (FTO) substrate using a spin-coating method, and we investigated the photocurrent density and dark current density of the WO3 photoelectrode with various amounts of H2O2 additive. The morphological, structural, optical, electrical and photoelectrochemical properties of the WO3 photoelectrode with various amounts of H2O2 additive were analyzed using FE-SEM, XRD, UV-vis spectroscopy, EIS and a three-electrode potentiostat/galvanostat system, respectively. The amount of H2O2 additive has a large influence on the thickness of the WO3 photoelectrode, XRD (100) peak intensity, light absorption, optical energy bandgap, flat-band potential, donor density value, etc., and thus has a large influence on photoelectrochemical properties. Specifically, the H2O2 additive had a large influence on the growth of the WO3 photoelectrode, and the photocurrent density and dark current density characteristics of the WO3 photoelectrode grown to a uniform and thick thickness were largely improved. As a result, the WO3 photoelectrode fabricated with 0.2 mL of added H2O2 exhibited a high photocurrent density value of 1.17 mA/cm<sup>2</sup>, which was about 23 times higher than that of the WO3 photoelectrode fabricated without H2O2 additive, and had a dark current density value of a low 0.04 mA/cm<sup>2</sup>, which was a reduction of about 87%.


2021 ◽  
pp. 100783
Author(s):  
Christopher Rosiles-Perez ◽  
Sirak Sidhik ◽  
Luis Ixtilico-Cortés ◽  
Fernando Robles-Montes ◽  
Tzarara López-Luke ◽  
...  

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.


Author(s):  
Mingqiang Zhong ◽  
Qin Feng ◽  
Changlai Yuan ◽  
Xiao Liu ◽  
Baohua Zhu ◽  
...  

AbstractIn this work, the (1−x)Bi0.5Na0.5TiO3-xBaNi0.5Nb0.5O3 (BNT-BNN; 0.00 ⩽ x ⩽ 0.20) ceramics were prepared via a high-temperature solid-state method. The crystalline structures, photovoltaic effect, and electrical properties of the ceramics were investigated. According to X-ray diffraction, the system shows a single perovskite structure. The samples show the normal ferroelectric loops. With the increase of BNN content, the remnant polarization (Pr) and coercive field (Ec) decrease gradually. The optical band gap of the samples narrows from 3.10 to 2.27 eV. The conductive species of grains and grain boundaries in the ceramics are ascribed to the double ionized oxygen vacancies. The open-circuit voltage (Voc) of ∼15.7 V and short-circuit current (Jsc) of ∼1450 nA/cm2 are obtained in the 0.95BNT-0.05BNN ceramic under 1 sun illumination (AM1.5G, 100 mW/cm2). A larger Voc of 23 V and a higher Jsc of 5500 nA/cm2 are achieved at the poling field of 60 kV/cm under the same light conditions. The study shows this system has great application prospects in the photovoltaic field.


2017 ◽  
Vol 80 (1) ◽  
Author(s):  
Zainal Arifin ◽  
Sudjito Soeparman ◽  
Denny Widhiyanuriyawan ◽  
Suyitno Suyitno ◽  
Argatya Tara Setyaji

Natural dyes have attracted much researcher’s attention due to their low-cost production, simple synthesis processes and high natural abundance. However the dye-sensitized solar cells (DSSCs) based natural dyes have higher tendency to degradation. This article reports on the enhancement of performance and stability of dye-sensitized solar cells (DSSCs) using natural dyes. The natural dyes were extracted from papaya leaves by ethanol solvent at a temperature of 50 °C. Then the extracted dyes were isolated and modified into Mg-chlorophyll using column chromatography. Mg-chlorophyll was then synthesized into Fe-chlorophyll to improve stability. The natural dyes were characterized using ultraviolet-visible spectrometry, Fourier transform infrared spectroscopy, and cyclic voltammetry. The performance of DSSCs was tested using a solar simulator. The results showed the open-circuit voltage, the short-circuit current density, and the efficiency of the extracted papaya leaves-based DSSCs to be 325 mV, 0.36 mA/cm2, and 0.07%, respectively. Furthermore, the DSSCs with purified chlorophyll provide high open-circuit voltage of 425 mV and short-circuit current density of 0.45 mA/cm2. The use of Fe-chlorophyll for sensitizing the DSSCs increases the efficiency up to 2.5 times and the stability up to two times. The DSSCs with Fe-chlorophyll dyes provide open-circuit voltage, short-circuit current density, and efficiency of 500 mV, 0.62 mA/cm2, and 0.16%, respectively. Further studies to improve the current density and stability of natural dye-based DSSCs along with an improvement in the anchor between dyes and semiconducting layers are required.


2020 ◽  
Vol 1 (8) ◽  
pp. 2964-2970
Author(s):  
Venkatesan Srinivasan ◽  
Jagadeeswari Sivanadanam ◽  
Kothandaraman Ramanujam ◽  
Mariadoss Asha Jhonsi

The inclusion of CNMs together with TiO2 enhanced the short circuit current density by 31% and power conversion efficiency (PCE) by 46% compared to the CNM-free DSSCs.


1999 ◽  
Vol 581 ◽  
Author(s):  
Doug Schulz ◽  
R. Ribelin ◽  
X. Wu ◽  
K.M. Jones ◽  
R.J. Matson ◽  
...  

ABSTRACTNano-sized dispersions have been employed as precursor inks for the spray deposition of contacts to both Si and CdTe materials. In the case of Si, nano-sized Al particles (nano-Al) were dispersed and spray deposited onto p-type Si. Annealing above the eutectic temperature causes alloy formation yielding a p+ layer with p ∼ 10−4 Ω•cm. For CdTe, nano-sized Te particles (nano-Te) were dispersed and sprayed onto CdTe/CdS/SnO2/glass heterostructures. Contact to the CdTe layer occurred during a 30 min anneal in He (T = 215 to 255 °C). These solar cells were finished by spin-coating the Te layer with Ag paint and subsequently annealing in air (100 °C / 1 h). This approach produces solar cells with open circuit voltages (Voc) from 720 to 800 mV, short circuit current densities (Jsc) from 18 to 20 mA/cm2 and efficiencies up to 10.3%. The performance of these cells was similar to those produced using the standard NREL contact.


Author(s):  
В.С. Калиновский ◽  
Е.В. Контрош ◽  
Г.В. Климко ◽  
С.В. Иванов ◽  
В.С. Юферев ◽  
...  

Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was used to grow p−i−n GaAs/Al0.2Ga0.8As structures of connecting tunnel diodes with peak tunnel current density of up to 200A/cm2 .


2021 ◽  
Vol 877 (1) ◽  
pp. 012001
Author(s):  
Marwah S Mahmood ◽  
N K Hassan

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.


Sign in / Sign up

Export Citation Format

Share Document