Effect of Annealing and of Effect of Annealing and of Cooling Rates onn-GaAs Electrode Photoelectrochemical Characteristics
The effect of annealing of then-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densitiesvspotential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealedn-GaAs.The effect of the rate of cooling of heatedn-GaAs wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current densityvs. potential plots, for samples annealed below 600ºC. For samples annealed at higher temperatures, quenching gave better dark-current densityvspotential plots. Forn-GaAs, slowly cooled electrodes from temperatures below 600ºC showed better photocurrent densityvspotential plots and higher efficiency.n-GaAs samples, quenched from temperatures above 700ºC, showed better photocurrent densityvspotential plots and higher efficiency than their slowly cooled counterparts.