Comparative electrical performance and failure analysis of air-annealed ruthenium Schottky contacts on 6H-SiC and 4H-SiC

2018 ◽  
Vol 6 (4) ◽  
pp. 722-737
Author(s):  
Kinnock V. Munthali
Author(s):  
George M. Wenger ◽  
Richard J. Coyle ◽  
Patrick P. Solan ◽  
John K. Dorey ◽  
Courtney V. Dodd ◽  
...  

Abstract A common pad finish on area array (BGA or CSP) packages and printed wiring board (PWB) substrates is Ni/Au, using either electrolytic or electroless deposition processes. Although both Ni/Au processes provide flat, solderable surface finishes, there are an increasing number of applications of the electroless nickel/immersion gold (ENi/IAu) surface finish in response to requirements for increased density and electrical performance. This increasing usage continues despite mounting evidence that Ni/Au causes or contributes to catastrophic, brittle, interfacial solder joint fractures. These brittle, interfacial fractures occur early in service or can be generated under a variety of laboratory testing conditions including thermal cycling (premature failures), isothermal aging (high temperature storage), and mechanical testing. There are major initiatives by electronics industry consortia as well as research by individual companies to eliminate these fracture phenomena. Despite these efforts, interfacial fractures associated with Ni/Au surface finishes continue to be reported and specific failure mechanisms and root cause of these failures remains under investigation. Failure analysis techniques and methodologies are crucial to advancing the understanding of these phenomena. In this study, the scope of the fracture problem is illustrated using three failure analysis case studies of brittle interfacial fractures in area array solder interconnects. Two distinct failure modes are associated with Ni/Au surface finishes. In both modes, the fracture surfaces appear to be relatively flat with little evidence of plastic deformation. Detailed metallography, scanning electron microscopy (SEM), energy dispersive x-ray analysis (EDX), and an understanding of the metallurgy of the soldering reaction are required to avoid misinterpreting the failure modes.


1996 ◽  
Vol 445 ◽  
Author(s):  
Nickolaos Strifas ◽  
Aris Christou

AbstractThe reliability of plastic packaged integrated circuits was assessed from the point of view of interfacial mechanical integrity. It is shown that the effect of structural weaknesses caused by poor bonding, voids, microcracks or delamination may not be evident in the electrical performance characteristics, but may cause premature failure. Acoustic microscopy (C-SAM) was selected for nondestructive failure analysis of the plastic integrated circuit (IC) packages. Integrated circuits in plastic dual in line packages were initially subjected to temperature (25 °C to 85 °C) and humidity cycling (50 to 85 %) where each cycle was of one hour duration and for over 100 cycles and then analyzed. Delamination at the interfaces between the different materials within the package, which is a major cause of moisture ingress and subsequent premature package failure, was measured. The principal areas of delamination were found along the leads extending from the chip to the edge of the molded body and along the die surface itself. Images of the 3-D internal structure were produced that were used to determine the mechanism for a package failure. The evidence of corrosion and stress corrosion cracks in the regions of delamination was identified.


2014 ◽  
Vol 492 ◽  
pp. 331-334
Author(s):  
Qian Feng ◽  
Kai Du ◽  
Yu Kun Li ◽  
Peng Shi ◽  
Qing Feng

We developed heterojunction-based Schottky solar cells consisting of π-conjugated polymers and n-type GaN. PEDOT: PSS was used as the transparent Schottky contact material. In order to improve the performance of solar cells, the effects of surface treatment on the electrical performance of PEDOT: PSS/n-GaN Schottky contacts were investigated. The Voc increased from 0.52V to 0.62V,0.54V and 0.54V and Isc from 0.33 mA/cm2 to 0.45mA/cm2,0.40mA/cm2 and 0.35mA/cm2 after HCl, HF solution and oxygen plasma treatments. The I-V and the XPS measurements indicated that the barrier height of PEDOT:PSS/n-GaN was increased from 0.62eV to 0.76eV, 0.72eV and 0.70eV and the ideality factor improved from 1.81 to 1.63, 1.67 and 1.73 respectively, which induced the variation of the solar cells characteristics..


1994 ◽  
Vol 337 ◽  
Author(s):  
Ho Jie ◽  
Jin Gaolong ◽  
Lu Liwu ◽  
Xu Zhenjia ◽  
Zhang Lichun

ABSTRACTRecent reports on refractory metal nitrides/n-GaAs Schottky contacts have demonstrated that improved electrical performance can be obtained after annealing at temperature between 750 and 850°C . It is thought that a p+-type layer should be responsible for this phenomenon, which may be generated by N or N related defects. In this paper, the role of nitrogen in SI-GaAs and n-GaAs has been investigated by Hall effect and DLTS measurements. No evidence of the formation of a p+-type layer has been observed. A deep energy level of Ec-0.36eV which is thought to be related to N and an enhanced effect of N on the density of EL2 level were observed. DLTS and SIMS techniques were used to study the interface of TiN/n-GaAs Schottky contacts. The Ti3+(3d1)/Ti2+(3d2) single acceptor level at Ec-0.21 eV was observed, but the EL2 donor level is dominant. Combining the experimental results, a discussion is made about the reasons for the improvements of electrical performance after annealing.


2005 ◽  
Vol 483-485 ◽  
pp. 721-724 ◽  
Author(s):  
Tomonori Nakamura ◽  
Toshiyuki Miyanagi ◽  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Tamotsu Jikimoto ◽  
...  

We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Fb increased and the leakage current decreased by annealing at 600oC, while no increase in n-factor and forward excess current owing to the high temperature annealing was observed. The Schottky barrier diode with Mo contact annealed at 600oC showed a blocking-voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mWcm2, achieving a high Vb 2/Ron value of 1898 MW/cm2.


Author(s):  
Vanessa Grace Martinez ◽  
Alden Almero ◽  
Gerard Gador

Abstract A comparison of the electrical performance and effect of different types of flux to Micro Ball Grid Array (ìBGATM) solder ball quality was conducted. The units using no clean flux were found to exhibit opens failures during off-board testing and programming. Initial analysis conducted showed that the failures were due to contact problems between the solder balls and the test/programming sockets resulting from the presence of a transparent residue on the solder balls. In-depth failure analysis, in parallel with experiments conducted in the assembly line, was performed to determine the root cause of the solder ball contamination. Three failure analysis techniques were employed, namely: Scanning Electron Microscopy (SEM), Energy Dispersive Xray Analysis (EDX), and Fourier Transform Infrared (FTIR) Spectroscopy. An initial experiment was conducted to isolate the cause of the contamination by examining the different modules in the ìBGATM assembly. Failure analysis and experimental data proved that the opens failures were due to the no clean flux residue that was deposited on the surface of the solder ball after the reflow process.


Author(s):  
Patricia F. Mead ◽  
Melody Burch ◽  
Patrick McCluskey ◽  
F. G. Johnson

Abstract Failure and degradation mechanisms of plastic packaged LEDs that have been subjected to high levels of moisture, current bias, and elevated temperature conditions have been investigated and analyzed. The investigation included electrical characterization and a variety of failure analysis techniques including photoluminescence (PL), electroluminescence (EL), cathodoluminescence (CL), and environmental scanning electron microscopy (ESEM). Our results highlight the usefulness of simple screening techniques to monitor the quality of newly manufactured LED packages. Our results also indicate that for AlGaAs structures, degradation of the light output and electrical performance involves a complex interaction between temperature, relative humidity at the LED surface and voltage bias.


Author(s):  
Tomonori Nakamura ◽  
Toshiyuki Miyanagi ◽  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Tamotsu Jikimoto ◽  
...  

Author(s):  
John R. Devaney

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.


Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions


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