DDR4 BER Degradation Due to Crack in FBGA Package Solder Ball

This paper measures bit error rate degradation in DDR4 due to crack in fine pitch ball grid array (FBGA) package solder ball. Thermal coefficient mismatch between the package and printed circuit board material causes cracks to occur in solder balls. These cracks change the electrical model of the solder ball and introduce parallel capacitance in the electrical model. The capacitance causes higher frequency attenuation and closes the data eye. As the data rate of the DDR4 increases there are more data eye closures. The data eye closure causes bit error rate (BER) degradation as the timing margin and voltage margin decreases. This degradation reduces the reliability of the system and causes more intermittent errors. DDR4 data line is loaded with a parallel capacitive element to mimic a crack in solder ball. The measured data eye shows a decrease in eye width. Bathtub plots are created for comparison of cracked solder ball and intact solder ball. The bathtub plots show the BER degradation due to crack in solder ball.

Pulse Electroplating of Ni–W Alloy for the Diffusion Barrier in Under Bump Metallurgy

Ni–W alloy was electroplated from citrate bath. The crack-free coatings were obtained using the pulse electroplating method. The surface hardness was increased up to 700 Hv and it is twice as high than that of the electroplated Ni. The surface hardness was increased as the content of W in the coating increased. However, the higher W contents made surface cracks and the surface hardness was decreased. Ni–W alloy made less intermetallic components (IMC) and the shear force of solder ball was increased as much as 20% compared with conventional Ni plating.

Deformation Behavior of Various Interconnection Structures Using Fine Pitch Microelectromechanical Systems (MEMS) Vertical Probe

Recently, fine pitch wafer level packaging (WLP) technologies have drawn a great attention in the semiconductor industries. WLP technology uses various interconnection structures including microbumps and through-silicon-vias (TSVs). To increase yield and reduce cost, there is an increasing demand for wafer level testing. Contact behavior between probe and interconnection structure is a very important factor affecting the reliability and performance of wafer testing. In this study, with a MEMS vertical probe, we performed systematic numerical analysis of the deformation behavior of various interconnection structures, including solder bump, copper (Cu) pillar bump, solder capper Cu bump, and TSV. During probing, the solder ball showed the largest deformation. The Cu pillar bump also exhibited relatively large deformation. The Cu bump began to deform at OD of 10 μm. At OD of 20 μm, bump pillar was compressed, and the height of the bump decreased by 8.3%. The deformation behavior of the solder capped Cu bump was similar to that of the solder ball. At OD of 20 μm, the solder and Cu bumps were largely deformed, and the total height was reduced by 11%. The TSV structure showed the lowest deformation, but exerted the largest stress on the probe. In particular, copper protrusion at the outer edge of the via was observed, and very large shear stress was generated between the via and the silicon oxide layer. In summary, when probing various interconnection structures, the probe stress is less than that when using an aluminum pad. On the other hand, deformation of the structure is a critical issue. In order to minimize damage to the interconnection structure, smaller size probes or less overdrive should be used. This study will provide important guidelines for performing wafer-level testing and minimizing damage of probes and interconnection structures.

Design of New Au–NiCo MEMS Vertical Probe for Fine-Pitch Wafer-Level Probing

As fine-pitch 3D wafer-level packaging becomes more popular in semiconductor industries, wafer-level prebond testing of various interconnect structures has become increasingly challenging. Additionally, improving the current-carrying capacity (CCC) and minimizing damage to the probe and micro-interconnect structures are very important issues in wafer-level testing. In this study, we propose an Au–NiCo MEMS vertical probe with an enhanced CCC to efficiently reduce the damage to the probe and various interconnect structures, including a solder ball, Cu pillar microbump, and TSV. The Au–NiCo probe has an Au layer inside the NiCo and an Au layer outside the surface of the NiCo probe to reduce resistivity and contact stress. The current-carrying capacity, contact stress, and deformation behavior of the probe and various interconnect structures were evaluated using numerical analyses. The Au–NiCo probe had a 150% higher CCC than the conventional NiCo probe. The maximum allowable current capacity of the 5000 µm-long Au–NiCo probe was 750 mA. The Au–NiCo probe exhibited less contact force and stress than the NiCo probe. The Au–NiCo probe also produced less deformation of various interconnect structures. These results indicate that the proposed Au–NiCo probe will be a prospective candidate for advanced wafer-level testing, with better probing efficiency and higher test yield and reliability than the conventional vertical probe.

Reliability and Performance of Wafer Level Fan Out Package for Automotive Radar

Embedded wafer level ball grid array (eWLB) or FO-WLP (Fan-out wafer-level packaging) is investigated as a package for MMICs (Monolithic Microwave Integrated Circuit) for automotive radar applications in the 77GHz range. Special focus is put on the thermo-mechanical performance to achieve automotive quality targets. The typical fatigue modes “solder ball fatigue” and “copper fatigue”, evolving during thermo-mechanical stress like cycling on board will be discussed. Simulation as well as experimental preparation results for typical fatigue levels are given. In addition, several influencing parameters are listed and rated regarding their effectiveness. The theoretical framework why solder ball fatigue is the only failure mode causing electrical failure is provided. The impact of different thermo-mechanically driven fatigue modes is discussed. The two important parameters to be considered for the functionality of the Radar system are RF (Radio Frequency) and thermal performance. For elaborating the RF performance with present fatigue modes, the phase shift between different channels and pads is analyzed by full-wave EM (Electromagnetic) simulation. It is found that for fatigue levels up to 90% the phase shift stays below specification for single fatigue modes and may approach specification only for an unlikely combination of all 90% fatigue modes. For assessing the thermal performance with present fatigue modes, thermal simulation as well as thermal measurements are used. Assuming 50% degradation in average for all thermal balls, an increase in RTH of up to about 30% is seen. On average for all thermal measurements, the deviation between measurement and simulation is within ±1°C.