Improvement of the voltage-controlled negative resistance of a porous silicon emitter using cathode reduction and electro-pretreatment

2016 ◽  
Vol 49 (34) ◽  
pp. 345101 ◽  
Author(s):  
Li He ◽  
Xiaoning Zhang ◽  
Wenjiang Wang ◽  
Xiaoning Zhao
Keyword(s):  
Porous Silicon ◽  
Negative Resistance ◽  
Cathode Reduction

The Photoluminescence Enhancement and Stability of Porous Silicon by Cathodic Reduction and Acid Treatment

2014 ◽  
Vol 887-888 ◽  
pp. 458-461
Author(s):  
Chang Qing Li ◽  
Kun Wang ◽  
Pei Jia Liu ◽  
Qi Ming
Keyword(s):  
Electron Microscope ◽  
Porous Silicon ◽  
Acid Treatment ◽  
Cathodic Reduction ◽  
Luminescence Properties ◽  
Sem Images ◽  
Photoluminescence Enhancement ◽  
The Stability ◽  
Scanning Electron ◽  
Cathode Reduction

Porous silicon (PSi) was fabricated by using electrochemical anodic etching method. Then acid treatment and cathode reduction treatment were employed to improve the luminescence properties and stability of PSi material. Photoluminescence (PL) measurements and scanning electron microscope (SEM) were used to observe the luminescence properties and microstructure of samples, respectively. The results of PL measurements showed that the PL intensity and the stability of luminescence of samples after cathodic reduction and acid treatment were significantly improved. The SEM images showed that the porosity of PSi may be increased through the cathodic reduction treated.

Nonlinear Electrical Functions of Porous Silicon Light-Emitting Diodes

1996 ◽  
Vol 452 ◽  
Author(s):  
K. Ueno ◽  
T. Ozaki ◽  
H. Koyama ◽  
N. Koshida
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Negative Resistance ◽  
Back Contact ◽  
Electrical Characteristics ◽  
Electrical Behavior ◽  
Si Substrate ◽  
Metal Insulator ◽  
Light Emitting ◽  
Au Film

AbstractSome nonlinear electrical characteristics in electroluminescent porous silicon (PS) diodes with a relatively thin PS layer (0.5–5 μm thick) are described. The experimental PS diodes were composed of a semitransparent Au film, a PS layer, p- or n-type Si substrate, and an ohmic back contact. The PS layers were prepared by anodizing Si wafers in an ethanoic HF solution. In some cases, the PS layers were treated by rapid thermal oxidization (RTO) process. When the bias voltage is applied, the PS diodes show the electrical behavior like the metal-insulator-semiconductor (MIS) diodes. The negative-resistance characteristics and memory effect are also observed. These results indicate that the quantum-structured nature of the PS layer appears not only in the optical properties but also in the electrical properties.

Negative-Resistance Effects in Light-Emitting Porous Silicon Diodes

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1096-1099 ◽  
Author(s):  
Koki Ueno ◽  
Nobuyoshi Koshida
Keyword(s):  
Porous Silicon ◽  
Negative Resistance ◽  
Light Emitting

Effects of Acid Treatment and Cathode Reduction on The Luminescence and Stability of Porous Silicon

2012 ◽  
Vol 33 (2) ◽  
pp. 146-149
Author(s):  
元美玲 YUAN Mei-ling ◽  
唐鹿 TANG Lu ◽  
吴真琦 WU Zhen-qi ◽  
汪庆年 WANG Qing-nian
Keyword(s):  
Porous Silicon ◽  
Acid Treatment ◽  
Cathode Reduction

Negative-Resistance Effects in Light-Emitting Porous Silicon Diodes

1997 ◽  
Author(s):  
Koki Ueno ◽  
Hideki Koyama ◽  
Nobuyoshi Koshida
Keyword(s):  
Porous Silicon ◽  
Negative Resistance ◽  
Light Emitting

Calculation of exchange energy in quantum dots : application to porous silicon

1993 ◽  
Vol 03 (C5) ◽  
pp. 355-358 ◽  
Author(s):  
G. FISHMAN ◽  
R. ROMESTAIN ◽  
J. C. VIAL
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Exchange Energy

An hourglass-type electromagnetic isolator with negative resistance electromagnetic shunt circuit

2020 ◽  
Vol 64 (1-4) ◽  
pp. 549-556
Author(s):  
Yajun Luo ◽  
Linwei Ji ◽  
Yahong Zhang ◽  
Minglong Xu ◽  
Xinong Zhang
Keyword(s):  
Vibration Isolation ◽  
Electromechanical Coupling ◽  
Coupling Effect ◽  
Negative Resistance ◽  
Isolation System ◽  
Amplitude Vibration ◽  
Vibration Responses ◽  
The Stability ◽  
Isolation Performance ◽  
Shunt Circuit

The present work proposed an hourglass-type electromagnetic isolator with negative resistance (NR) shunt circuit to achieve the effective suppression of the micro-amplitude vibration response in various advanced instruments and equipment. By innovatively design of combining the displacement amplifier and the NR electromagnetic shunt circuit, the current new type of vibration isolator not only can effectively solve the problem of micro-amplitude vibration control, but also has significant electromechanical coupling effect, to obtain excellent vibration isolation performance. The design of the isolator and motion relationship is presented firstly. The electromechanical coupling dynamic model of the isolator is also given. Moreover, the optimal design of the NR electromagnetic shunt circuit and the stability analysis of the vibration isolation system are carried out. Finally, the simulation results about the transfer function and vibration responses demonstrated that the isolator has a significant isolation performance.

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