Structural, electrical and optical properties of transparent conducting SnO2films: effect of the oxygen flow rate

2012 ◽  
Vol 86 (1) ◽  
pp. 015801 ◽  
Author(s):  
M Maleki ◽  
S M Rozati
Keyword(s):  
Optical Properties ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Electrical And Optical Properties ◽  
Transparent Conducting

Evolution of microstructures and optical properties of gadolinium oxide with oxygen flow rate and annealing temperature

2019 ◽  
Vol 37 (4) ◽  
pp. 410-415 ◽  
Author(s):  
Zhenhuai Yang ◽  
Lei Yang ◽  
Bing Dai ◽  
Pei Lei ◽  
Shuai Guo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Flow Rate ◽  
Annealing Temperature ◽  
Gadolinium Oxide ◽  
Oxygen Flow Rate ◽  
Oxygen Flow

Effect of Oxygen Flow Rate on Electrical and Optical Properties of ATO Thin Films Prepared by RF Magnetron Sputtering

2014 ◽  
Vol 616 ◽  
pp. 178-182
Author(s):  
P. Yang ◽  
L.R. Jiang ◽  
Jun Yan Wu ◽  
Fei Chen ◽  
Jorge Alberto Galaviz-Pérez ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Lattice Structure ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Effect Of Oxygen

Transparent conducting antimony doped tin oxide (ATO) films were sputtered on quartz glass substrates by RF magnetron sputtering at an oxygen flow rate ranging from 0 to 15 sccm. The films were prepared at room temperature and annealed for 15 min in air atmospheres at a temperature of 450 °C. The effect of oxygen flow rate has been investigated by comparing eletrical and optical properties of ATO films. The results suggest that, oxygen flow rate has a great impact on Sb5+/Sb3+ ratio and lattice structure integrity, which finally affects the transmittance and electrical resistivity. With the increase of oxygen flow rate, the grain size is enlarged, which leads to a higher average optical transmittance. On the other hand, with oxygen flow rate increasing, the Sb5+/Sb3+ ratio first increases and then decreases sharply when the oxygen flow rate exceeds 5 sccm. The increase of Sb5+/Sb3+ ratio results in the increase of carrier concentration and finally contributes to a decrease of electrical resistivity. The optimal resistivity is 8.9×10-2 Ω·cm and the average transmittance is about 95% at an oxygen flow rate of 5 sccm.

Effect of O2 Flow Rate on Structural and Optical Properties of Tantalum Oxide Thin Films Prepared by DC Reactive Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 448-451 ◽  
Author(s):  
Narong Sangwaranatee ◽  
Mati Horprathum ◽  
Jakrapong Kaewkhao
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Tantalum Oxide ◽  
Oxygen Flow Rate ◽  
Reactive Magnetron Sputtering ◽  
Oxygen Flow ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering

Tantalum oxide (Ta2O5) thin films have been deposited on glass substrates and silicon wafers (100) by dc reactive magnetron sputtering and with a 99.995% pure tantalum target. The effect of the oxygen flow rate on the crystallinity and optical properties were investigated. The films were characterized by X-ray diffraction patterns, UV-Vis spectrophotometer and spectroscopic ellipsometry. The results show that the deposition rate of Ta2O5 thin films was decreased with the increase in oxygen flow rate. In addition, Ta2O5 thin films deposited at oxygen flow rate higher than 6 sccm could be exhibited sufficiently oxide thin film, the transmittance spectrum percentage indicated 80%, which corresponded to the obtained optical characteristic.

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