Evolution of microstructures and optical properties of gadolinium oxide with oxygen flow rate and annealing temperature

2019 ◽  
Vol 37 (4) ◽  
pp. 410-415 ◽  
Author(s):  
Zhenhuai Yang ◽  
Lei Yang ◽  
Bing Dai ◽  
Pei Lei ◽  
Shuai Guo ◽  
...  
2013 ◽  
Vol 813 ◽  
pp. 340-344 ◽  
Author(s):  
Wei Ren Chen ◽  
Yang Sheng Lin ◽  
Huai Yi Chen

In this study, we aimed at exploring a layer of radio frequency (RF) sputtered titanium dioxide (TiO2) film on a sputtered ZnO film treated by hydrothermal reaction and then conducted characterization of the film. The main objective was to discuss characteristics of the fabricated TiO2 films under conditions of different annealing temperature, film thickness, and oxygen flow rate. After measurement of four-point probe for the fabricated TiO2 films under the same film thickness or oxygen flow rate, their sheet resistance all became smaller through high-temperature annealing at 500°C, and the thicker the TiO2 film was, the higher the sheet resistance was. Under conditions of fixed TiO2 film thickness and annealing temperature, with increasing oxygen flow rate, the sheet resistances of sample thin films increased initially and then decreased. The sheet resistances became highest at oxygen flow rate of 4 sccm. Results, measured from field emission scanning electron microscope (FE-SEM), showed that the structure arrangement of TiO2 nanorods was affected by TiO2 film thickness, oxygen flow rate and annealing temperature. The stacking and blending situations between nanorods became severer for higher oxygen flow rate and annealing temperature above 400°C. In addition, grains formed on film surface apparently spread more outwards as the film became thicker.


2014 ◽  
Vol 616 ◽  
pp. 178-182
Author(s):  
P. Yang ◽  
L.R. Jiang ◽  
Jun Yan Wu ◽  
Fei Chen ◽  
Jorge Alberto Galaviz-Pérez ◽  
...  

Transparent conducting antimony doped tin oxide (ATO) films were sputtered on quartz glass substrates by RF magnetron sputtering at an oxygen flow rate ranging from 0 to 15 sccm. The films were prepared at room temperature and annealed for 15 min in air atmospheres at a temperature of 450 °C. The effect of oxygen flow rate has been investigated by comparing eletrical and optical properties of ATO films. The results suggest that, oxygen flow rate has a great impact on Sb5+/Sb3+ ratio and lattice structure integrity, which finally affects the transmittance and electrical resistivity. With the increase of oxygen flow rate, the grain size is enlarged, which leads to a higher average optical transmittance. On the other hand, with oxygen flow rate increasing, the Sb5+/Sb3+ ratio first increases and then decreases sharply when the oxygen flow rate exceeds 5 sccm. The increase of Sb5+/Sb3+ ratio results in the increase of carrier concentration and finally contributes to a decrease of electrical resistivity. The optimal resistivity is 8.9×10-2 Ω·cm and the average transmittance is about 95% at an oxygen flow rate of 5 sccm.


2014 ◽  
Vol 979 ◽  
pp. 448-451 ◽  
Author(s):  
Narong Sangwaranatee ◽  
Mati Horprathum ◽  
Jakrapong Kaewkhao

Tantalum oxide (Ta2O5) thin films have been deposited on glass substrates and silicon wafers (100) by dc reactive magnetron sputtering and with a 99.995% pure tantalum target. The effect of the oxygen flow rate on the crystallinity and optical properties were investigated. The films were characterized by X-ray diffraction patterns, UV-Vis spectrophotometer and spectroscopic ellipsometry. The results show that the deposition rate of Ta2O5 thin films was decreased with the increase in oxygen flow rate. In addition, Ta2O5 thin films deposited at oxygen flow rate higher than 6 sccm could be exhibited sufficiently oxide thin film, the transmittance spectrum percentage indicated 80%, which corresponded to the obtained optical characteristic.


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