scholarly journals The Resistive Switching Behavior of Al/Chitosan-Graphene Oxide/FTO Structure

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Hau Huu Do Ho ◽  
Trung Minh Le ◽  
Ngoc Kim Pham
Keyword(s):  
Graphene Oxide ◽  
Electric Fields ◽  
Nonvolatile Memory ◽  
Conduction Mechanism ◽  
Random Access ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Bipolar Switching ◽  
Metal Insulator Metal

Resistive random access memory (RRAM) is emerging as a new class of nonvolatile memory that offers promising electronic properties and simple metal-insulator-metal (MIM) structures for sandwich layers, such as organics, inorganics, and hybrid materials. Hybrid structures have attracted much interest recently because of their advantageous properties. The combination of chitosan (CS) and graphene oxide (GO) acts as switching layers in the Al/CS-GO/FTO RRAM structure it is studied with bipolar switching behavior at approximately 102 ON/OFF ratios during 100 cycles. This hybrid interaction is identified by shifts in the D, G, and 2D bands using Raman spectroscopy. The conduction mechanism is proposed to be a space-charge-limited conduction (SCLC) mechanism and trap-assisted tunneling conduction mechanism in the ON and OFF states, respectively. The trapped and detrapped electrons move through the trap sites with external electric fields, and this movement is responsible for the switching mechanism of the CS-GO nanocomposite memory device.

scholarly journals Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device

Polymers ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 901 ◽  
Author(s):  
Ju-Young Choi ◽  
Hwan-Chul Yu ◽  
Jeongjun Lee ◽  
Jihyun Jeon ◽  
Jaehyuk Im ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Indium Tin Oxide ◽  
Nonvolatile Memory ◽  
In Situ Polymerization ◽  
Random Access ◽  
Charge Trapping ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Current Ratio ◽  
Functionalized Graphene Oxide

2,6-Diaminoanthracene (AnDA)-functionalized graphene oxide (GO) (AnDA-GO) was prepared and used to synthesize a graphene oxide-based polyimide (PI-GO) by the in-situ polymerization method. A PI-GO nanocomposite thin film was prepared and characterized by infrared (IR) spectroscopy, thermogravimetric analysis (TGA) and UV-visible spectroscopy. The PI-GO film was used as a memory layer in the fabrication of a resistive random access memory (RRAM) device with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes. The device showed write-once-read-many-times (WORM) characteristics with a high ON/OFF current ratio (Ion/Ioff = 3.41 × 108). This excellent current ratio was attributed to the high charge trapping ability of GO. In addition, the device had good endurance until the 100th cycle. These results suggest that PI-GO is an attractive candidate for applications in next generation nonvolatile memory.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

scholarly journals Insertion of a Graphene Oxide Layer into a Cu/SiO2/Pt Structure to Overcome Performance Degradation in a Vaporless Environment

2019 ◽  
Vol 9 (7) ◽  
pp. 1432
Author(s):  
Chih-Yi Liu ◽  
Chun-Hung Lai ◽  
Chao-Cheng Lin ◽  
Chih-Peng Yang
Keyword(s):  
Graphene Oxide ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Photoelectron Spectra ◽  
Switching Behavior ◽  
Schematic Model ◽  
Access Memory ◽  
Electrical Field ◽  
Pt Electrode ◽  
Cu Ions

A Cu/SiO2/Pt structure is usually used to study the resistive memory properties of an electrochemical resistive random access memory. It can be reversibly switched between low- and high-resistance states by using DC voltages in the atmosphere. However, its resistive switching behavior disappears in a vaporless environment because no conducting filaments can be formed within the Cu/SiO2/Pt structure. This study inserted a graphene oxide (GO) layer to fabricate a Cu/GO/SiO2/Pt structure that could be resistively switched in a vaporless environment. The X-ray photoelectron spectra depth profile of the Cu/GO/SiO2/Pt structure showed that oxygen-related groups of the GO film reacted with the Cu electrode. The GO film assisted Cu ionization in a vaporless environment, and Cu ions could migrate in an electrical field to the Pt electrode. Cu conducting filaments were formed and ruptured by different polarity voltages, and the resistance of the Cu/GO/SiO2/Pt structure could be reversibly switched in a vaporless environment. A schematic model was proposed to explain the switching mechanisms in the atmosphere and a vaporless environment.

scholarly journals Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Peng Hai-yun ◽  
Zhou Wen-gang
Keyword(s):  
Ion Mobility ◽  
Nonvolatile Memory ◽  
Low Cost ◽  
Random Access ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Mobility Model ◽  
Storage Device ◽  
New Device ◽  
Switching Matrix

There are high demands for research of new device with greater accessing speed and stability to replace the current SRAM storage cell. The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the characteristics of high read/write speed, high storage density, low power, low cost, very small cell, being nonvolatile, and unlimited writing endurance. The device has extreme short erasing time and the stored charge cannot be destroyed after power-off. Therefore, the ReRAM device is a significant storage device for many applications in the next generation. In this paper, we first explored the mechanism of the ReRAM device based on ion mobility model and then applied this device to optimize the design of FPGA switching matrix. The results show that it is beneficial to enhance the FPGA performance to replace traditional SRAM cells with ReRAM cells for the switching matrix.

High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient

Nanoscale ◽  
2021 ◽  
Author(s):  
Tariq Aziz ◽  
Shi-Jing Wei ◽  
Yun Sun ◽  
Lai-Peng Ma ◽  
Songfeng Pei ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Layer ◽  
Homogeneous Oxidation

The conventional strategy of fabricating resistive random access memory (RRAM) based on graphene oxide is limited to a resistive layer with homogeneous oxidation, and the switching behavior relies on its...

Sign in / Sign up

Export Citation Format

Share Document