Cross-sectional scanning thermal microscopy of ErAs/GaAs superlattices grown by molecular beam epitaxy

2015 ◽  
Vol 26 (26) ◽  
pp. 265701 ◽  
Author(s):  
K W Park ◽  
E M Krivoy ◽  
H P Nair ◽  
S R Bank ◽  
E T Yu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Scanning Thermal Microscopy ◽  
Cross Sectional ◽  
Thermal Microscopy

ECR-MBE and GSMBE of Gallium nitride on Si(111)

1995 ◽  
Vol 395 ◽  
Author(s):  
U. Rossner ◽  
J.-L. Rouviere ◽  
A. Bourret ◽  
A. Barski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
High Energy ◽  
Emission Peak ◽  
Growth Mode ◽  
Cross Sectional ◽  
Dimensional Growth

ABSTRACTElectron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECR-MBE) and Gas Source Molecular Beam Epitaxy (GSMBE) have been used to grow hexagonal GaN on Si (111). In the ECR-MBE configuration high purity nitrogen has been used as nitrogen source. In GSMBE ammonia was supplied directly to the substrate to be thermally cracked in the presence of gallium.By a combined application of in-situ reflection high-energy electron-diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM) the growth mode and structure of GaN were determined. The growth mode strongly depends on growth conditions. Quasi two dimensional growth was observed in ECR-MBE configuration for a substrate temperature of 640°C while three dimensional growth occured in GSMBE configuration in the temperature range from 640 to 800°C.Low temperature (9 K) photoluminescence spectra show that for samples grown by ECR-MBE and GSMBE a strong near band gap emission peak dominates while transitions due to deep level states are hardly detectable. The best optical results (the highest near band gap emission peak intensity) have been observed for samples grown by GSMBE at high temperature (800°C). This could be explained by the increase of grain dimensions (up to 0,3 – 0,5 μm) observed in samples grown by GSMBE at 800°C.

Optical and Surface Morphological Study of GaN Nanocolumn Grown on Gallium Coated Si by Molecular Beam Epitaxy

2007 ◽  
Vol 31 ◽  
pp. 120-122
Author(s):  
Kannappan Santhakumar ◽  
D.H. Kang ◽  
Jae Chul Song ◽  
Dong Wook Kim ◽  
J.S. Kim ◽  
...  
Keyword(s):  
Raman Spectrum ◽  
Molecular Beam Epitaxy ◽  
Morphological Study ◽  
Molecular Beam ◽  
Growth Surface ◽  
Continuous Film ◽  
Cross Sectional ◽  
Excitonic Emission ◽  
Vertically Aligned ◽  
Sectional Analysis

Vertically aligned GaN nanocolumn arrays were grown by molecular beam epitaxy on Gallium coated silicon substrate. The dense packing of the NCs gives them the appearance of a continuous film in surface view, but cross-sectional analysis shows them to be isolated nanostructures. The GaN nanocolumns have uniform diameters of 85 nm, lengths up to 720 nm and possess a pyramid like tip. Photoluminescence measurements of NCs show excitonic emission with a dominant, narrow peak centered at 363 nm and FWHM of 68 meV. From the Raman spectrum, peaks at 566.9 and 730 cm-1 are assigned to the E2 and A1(LO) GaN phonons modes which clearly indicates that the grown nanocolumns are highly crystalline. The grown nanocolumns are highly oriented and perpendicular to the growth surface.

Low Temperature Epitaxy of Si on Dihydride-Terminated Si (001): Energetic Versus Thermal Growth

1996 ◽  
Vol 441 ◽  
Author(s):  
M. E. Taylor ◽  
Harry A. Atwater ◽  
M. V. Ramana Murty
Keyword(s):  
Molecular Beam Epitaxy ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
High Energy ◽  
Interface Roughness ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Comparison Of The Results ◽  
Si Films

AbstractPulsed laser deposition of Si on dihydride-terminated (l×1) Si (001) at low temperatures yields epitaxial layers, unlike molecular beam epitaxy. Si films were grown by ultrahigh vacuum pulsed laser deposition on the dihydride surface at substrate temperatures from 40 °C to 350 ° C. Epitaxial thickness and interface roughness were measured by high-resolution cross-sectional transmission electron microscopy and found to be comparable to known data for Si films grown by molecular beam epitaxy on monohydride-terminated (2×l) Si (001). Si films were grown at 200 °C by pulsed laser deposition on the dihydride surface at argon background pressures between 10− torr and 10−1 torr. Ion probe time of flight data was collected over the same pressure range. Comparison of the results suggests that loss of epitaxy is correlated with low incident energy. This, in conjunction with information on surface reconstruction obtained from reflection high-energy electron diffraction, suggests that the mechanism enabling epitaxy on the dihydride surface is Si subplantation, a mechanism only possible in growth with an energetic beam.

Formation of High-Quality Si/CoSi2/Si Double Hetero-Structures by Self-Aligned and Two-Step Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Masanobu Miyao ◽  
Takashi Ohshima ◽  
Nobuo Nakamura ◽  
Kiyokazu Nakagawa
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
High Quality ◽  
Cross Sectional ◽  
New Techniques ◽  
Transmission Microscopy ◽  
Temperature Growth ◽  
Double Heterostructures

AbstractThe formation and application of Si/CoSi2/Si double heterostructures are comprehensively studied. A high-quality double heterostructure is formed by two-step molecular beam epitaxy of the Si over layer, i.e., low -temperature growth followed by high-temperature growth. The interfaces between CoSi2 and Si observed by cross-sectional transmission microscopy are atomically abrupt and smooth. In addition, a new fine patterning method of CoSi2 films using self-aligned and selective growth is developed. Finally, permeable base transistors (PBT) with high performance (gm=50 mS /mm) are fabricated using these new techniques.

scholarly journals Quantifying thermal transport in buried semiconductor nanostructures via Cross-Sectional Scanning Thermal Microscopy

Nanoscale ◽  
2021 ◽  
Author(s):  
Jean Spièce ◽  
Charalambos Evangeli ◽  
Alexander J. Robson ◽  
Alexandros El Sachat ◽  
Linda Haenel ◽  
...  
Keyword(s):  
Thermal Transport ◽  
Semiconductor Nanostructures ◽  
Scanning Thermal Microscopy ◽  
Thermoelectric Devices ◽  
Cross Sectional ◽  
Moore’S Law ◽  
Thermal Microscopy ◽  
Moore's Law ◽  
Speed Increase ◽  
Clock Speed

Managing thermal transport in nanostructures became a major challenge in development of active microelectronic, optoelectronic and thermoelectric devices, stalling the famous Moore’s law of clock speed increase of microprocessors for...

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