Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing

Abstract We study the generation and transformation of intrinsic luminescent centers in 4H-polytype of silicon carbide via heavy ion implantation and subsequent annealing. Defects induced by the implantation of germanium (Ge) or tin (Sn) have been characterized by photoluminescence (PL) spectra recorded at cryogenic temperatures. We find three predominant but as-yet-unidentified PL signatures (labeled as DI1–3) at the wavelength of 1002.8 nm (DI1), 1004.7 nm (DI2), and 1006.1 nm (DI3) after high dose implantation (> 4 × 1013 cm-2) and high temperature annealing (> 1700○C). The fact that the DI lines co-occur and are energetically close together suggest that they originate from the same defect. Regardless of the implanted ion (Ge or Sn), a sharp increase in their PL intensity is observed when the implantation damage becomes high (vacancy concentration > 1022 cm-3), indicating that the lines stem from an intrinsic defect caused by the damage. By tracking the PL signals after stepwise annealing, we examine how the overall intrinsic defects behave in the temperature range of 500 – 1800○C; the silicon vacancies formed by the implantation transform into either divacancies or antisite-vacancy pairs with annealing at about 1000○C. These spectra signatures are strongly reduced at 1200○C where the so-called TS defects are maximized in luminescence. As a final stage, the DI defects, which are most likely formed of antisites and vacancies, emerge at 1700○C. Our results provide a knowledge on how to incorporate and manipulate the intrinsic luminescent centers in SiC with ion implantation and annealing, paving the way for fully integrated quantum technology employing SiC.

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The Production of Porous Structures on Si, Ge and GaAs by High Dose Ion Implantation.

MRS Proceedings ◽

10.1557/proc-27-205 ◽

1983 ◽

Vol 27 ◽

Cited By ~ 10

Author(s):

J.S. Williams ◽

D.J. Chivers ◽

R.G. Elliman ◽

S.T. Johnson ◽

E.M. Lawson ◽

...

Keyword(s):

Ion Implantation ◽

Strong Evidence ◽

Heavy Ion ◽

High Dose ◽

Porous Structures ◽

Structural Modifications ◽

Gaas Substrates ◽

Ion Implanted

ABSTRACTThis paper presents new data on the previously observed porous structures which can be developed in high dose, ion implanted Ge. In addition, we provide strong evidence to suggest that such porous structures can be formed in high dose, ion implanted Si and GaAs substrates under particular implant conditions. Comparison of the various systems using RBS analysis indicates that heavy ion doses as low as 1014 cm−2 can give rise to such structural modifications in GaAs, whereas doses of 1015 cm−2 are needed to observe an effect with Ge and doses usually exceeding 1016cm−2 are required for Si.

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High dose, heavy ion implantation into metals: the use of sacrificial surface layers to enhance retention

Surface and Coatings Technology ◽

10.1016/s0257-8972(94)80004-9 ◽

1994 ◽

Vol 65 (1-3) ◽

pp. 24-29 ◽

Cited By ~ 6

Author(s):

Lynann Clapham

Keyword(s):

Ion Implantation ◽

Heavy Ion ◽

High Dose ◽

Surface Layers

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Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach

MRS Proceedings ◽

10.1557/proc-439-101 ◽

1996 ◽

Vol 439 ◽

Author(s):

S. Tian ◽

M. Morris ◽

S. J. Morris ◽

B. Obradovic ◽

A. F. Tasch

Keyword(s):

Ion Implantation ◽

Damage Evolution ◽

Damage Model ◽

Amorphous Layer ◽

High Dose ◽

Defect Production ◽

Implantation Damage ◽

Wide Range ◽

Physically Based ◽

First Time

AbstractWe present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

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Raman and optical absorption studies of silicon carbide structure damage by ion implantation

MRS Proceedings ◽

10.1557/proc-719-f8.15 ◽

2002 ◽

Vol 719 ◽

Author(s):

Claudiu I. Muntele ◽

Iulia C. Muntele ◽

D. Ila ◽

David B. Poker ◽

Dale K. Hensley

Keyword(s):

Silicon Carbide ◽

Optical Absorption ◽

Ion Implantation ◽

High Purity ◽

Damage Evolution ◽

Heavy Ion ◽

Fabrication Process ◽

Crystalline Lattice ◽

Structure Damage ◽

Absorption Studies

AbstractThe work reported here deals with studying the defects induced by heavy ion implantation as well as the degree of crystalline lattice recovery after annealing in a high purity argon environment between 600 and 1600 °C. We implanted 6H, n-type silicon carbide with Pd and Au ions at 1015 ions/cm2, and used Micro-Raman (MR) and optical absorption (OA) spectroscopy techniques for investigating the lattice properties and damage evolution at various stages during the fabrication process.

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Amorphous structures of silicon carbonitride formed by high-dose nitrogen ion implantation into silicon carbide

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(03)00909-1 ◽

2003 ◽

Vol 206 ◽

pp. 994-998 ◽

Cited By ~ 8

Author(s):

Manabu Ishimaru ◽

Muneyuki Naito ◽

Yoshihiko Hirotsu ◽

Kurt E. Sickafus

Keyword(s):

Silicon Carbide ◽

Ion Implantation ◽

Silicon Carbonitride ◽

High Dose ◽

Nitrogen Ion Implantation ◽

Amorphous Structures ◽

Nitrogen Ion

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Regrowth of heavy-ion implantation damage by electron beams

Materials Science in Semiconductor Processing ◽

10.1016/s1369-8001(00)00049-4 ◽

2000 ◽

Vol 3 (4) ◽

pp. 311-315 ◽

Cited By ~ 8

Author(s):

I Jenčič ◽

I.M Robertson

Keyword(s):

Ion Implantation ◽

Electron Beams ◽

Heavy Ion ◽

Implantation Damage

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Modeling of Damage Evolution During Ion Implantation into Silicon: a Monte Carlo Approach

MRS Proceedings ◽

10.1557/proc-438-83 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 1

Author(s):

S. Tian ◽

M. Morris ◽

S. J. Morris ◽

B. Obradovic ◽

A. F. Tasch

Keyword(s):

Ion Implantation ◽

Damage Evolution ◽

Damage Model ◽

Amorphous Layer ◽

High Dose ◽

Defect Production ◽

Implantation Damage ◽

Wide Range ◽

Physically Based ◽

First Time

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Lattice site location of ultra-shallow implanted B in Si using ion beam analysis

MRS Proceedings ◽

10.1557/proc-669-j5.3 ◽

2001 ◽

Vol 669 ◽

Cited By ~ 8

Author(s):

Hajime Kobayashi ◽

Ichiro Nomachi ◽

Susumu Kusanagi ◽

Fumitaka Nishiyama

Keyword(s):

Ion Implantation ◽

Lattice Site ◽

Rutherford Backscattering Spectrometry ◽

Hole Concentration ◽

Ion Beam ◽

Nuclear Reaction Analysis ◽

High Dose ◽

Site Location ◽

Ion Channeling ◽

Implantation Damage

ABSTRACTWe have investigated the lattice site location of B in Si using ion channeling in combination with nuclear reaction analysis (NRA). Silicon samples implanted with Boron at an energy of 10 keV and a dose of 5 × 1014 cm−2 (low dose samples) or 5 × 1015 cm−2 (high dose samples) were annealed at 1000 °C for 10 seconds (RTA) or at 800 °C for 10 minutes (FA). The activation efficiencies of these samples were estimated from the B atomic concentration and the hole concentration obtained by secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP), respectively. We also studied the ion implantation damage of Si crystals using ion channeling combined with Rutherford backscattering spectrometry (RBS). We found that the activation efficiency is proportional to the substitutionality, meaning that substitutional B is fully activated without any carrier compensation. We also found that B atoms go to the substitutional sites and are activated up to the solubility limit in the high dose samples. However, the ion implantation damage of the crystalline Si in the high dose samples increases somewhat after annealing.

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Analysis of Ion Implantation Damage in Silicon Wafers by a Contactless Microwave Diagnostic

MRS Proceedings ◽

10.1557/proc-699-r4.2 ◽

2001 ◽

Vol 699 ◽

Author(s):

Richard K. Ahrenkiel ◽

B. Lojek

Keyword(s):

Ion Implantation ◽

Integrated Circuit ◽

Low Frequency ◽

Optical Excitation ◽

Minority Carrier Lifetime ◽

Heavy Ion ◽

Silicon Wafers ◽

Contactless Measurement ◽

Implantation Damage ◽

Probe Frequency

AbstractRapid thermal annealing (RTA) of lattice damage created by heavy ion implantation damage is required to maintain the integrity of semiconductor material used for submicron-integrated circuit devices. A quick, efficient, and contactless diagnostic of the implantation damage is highly desirable in both research and production environments. A contactless measurement technique has been recently applied to this problem that uses a deeply penetrating low-frequency microwave probe frequency operating at 420 MHz. Here, we will demonstrate the use of this high frequency resonance-coupled photoconductive decay (RCPCD) technique, which, when combined with a tunable optical excitation source, enables us to map the radiation damage in boron and arsenic-implanted silicon wafers. We quantify the damage by mapping the minority-carrier lifetime as a function of optical penetration depth. In this work, we quickly and efficiently compared the effectiveness of various RTA processes by the RCPCD diagnostic.

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