Modeling of Supervised Machine Learning using Mechanism of Quantum Computing.

Mechanism of quantum computing helps to propose several task of machine learning in quantum technology. Quantum computing is enriched with quantum mechanics such as superposition and entanglement for making new standard of computation which will be far different than classical computer. Qubit is sole of quantum technology and help to use quantum mechanism for several tasks. Tasks which are non-computable by classical machine can be solved by quantum technology and these tasks are classically hard to compute and categorised as complex computations. Machine learning on classical models is very well set but it has more computational requirements based on complex and high-volume data processing. Supervised machine learning modelling using quantum computing deals with feature selection, parameter encoding and parameterized circuit formation. This paper highlights on integration of quantum computation and machine learning which will make sense on quantum machine learning modeling. Modelling of quantum parameterized circuit, Quantum feature set design and implementation for sample data is discussed. Supervised machine learning using quantum mechanism such as superposition and entanglement are articulated. Quantum machine learning helps to enhance the various classical machine learning methods for better analysis and prediction using complex measurement.

An Efficient Visually Meaningful Quantum Walks-Based Encryption Scheme for Secure Data Transmission on IoT and Smart Applications

Smart systems and technologies have become integral parts of modern society. Their ubiquity makes it paramount to prioritise securing the privacy of data transferred between smart devices. Visual encryption is a technique employed to obscure images by rendering them meaningless to evade attention during transmission. However, the astounding computing power ascribed to quantum technology implies that even the best visually encrypted systems can be effortlessly violated. Consequently, the physical realisation quantum hardware portends great danger for visually encrypted date on smart systems. To circumvent this, our study proposes the integration of quantum walks (QWs) as a cryptographic mechanism to forestall violation of the integrity of images on smart systems. Specifically, we use QW first to substitute the original image and to subsequently permutate and embed it onto the reference image. Based on this structure, our proposed quantum walks visually meaningful cryptosystem facilities confidential transmission of visual information. Simulation-based experiments validate the performance of the proposed system in terms of visual quality, efficiency, robustness, and key space sensitivity, and by that, its potential to safeguard smart systems now and as we transition to the quantum era.

Quantum for all – building a firm foundation

Oxford Quantum Circuits chief executive llana Wisby talks to Tushna Commissariat about UK investments and innovation in quantum technology, and the potentially world-changing impact that it could have.

Electronic properties of semiconductor quantum wires for shallow symmetric and asymmetric confinements

Quantum wires (QWs) and quantum point contacts (QPCs) have been realized in GaAs/AlGaAs heterostructures in which a two-dimensional electron gas (2DEG) resides at the interface between GaAs and AlGaAs layered semiconductors. The electron transport in these structures has previously been studied experimentally and theoretically, and a 0.7 conductance anomaly has been discovered. The present paper is motivated by experiments with a QW in shallow symmetric and asymmetric confinements that have shown additional conductance anomalies at zero magnetic field. The proposed device consists of a QPC that is formed by split gates and a top gate between two large electron reservoirs. This paper is focused on the theoretical study of electron transport through a wide top-gated QPC in a low-density regime and is based on density functional theory. The electron-electron interaction and shallow confinement make the splitting of the conduction channel into two channels possible. Each of them becomes spin-polarized at certain split and top gates voltages and may contribute to conductance giving rise to additional conductance anomalies. For symmetrically loaded split gates two conduction channels contribute equally to conductance. For the case of asymmetrically applied voltage between split gates conductance anomalies may occur between values of 0.25(2e2/h) and 0.7(2e2/h) depending on the increased asymmetry in split gates voltages. This corresponds to different degrees of spin-polarization in the two conduction channels that contribute differently to conductance. In the case of a strong asymmetry in split gates voltages one channel of conduction is pinched off and just the one remaining channel contributes to conductance. We have found that on the perimeter of the anti-dot there are spin-polarized states. These states may also contribute to conductance if the radius of the anti-dot is small enough and tunnelling between these states may occur. The spin-polarized states in the QPC with shallow confinement tuned by electric means may be used for the purposes of quantum technology.

Quantum Internet and Security of Military Communications

In general, the Internet relies on complex codes to protect information, but hackers are becoming more adept at defeating such systems. These cyberattacks lead to privacy breaches of government officials, as well as large corporations, costing billions of euros per year in total and compromising customer data. According to ENISA reports, these numbers are set to rise. Quantum technology is seen by scientists as a revolutionary replacement for standard encryption techniques.

Ask me anything: Farai Mazhandu

Farai Mazhandu is chief executive and co-founder of Bayete Quantum Technologies, which seeks to use quantum technology to solve problems in areas including agriculture and healthcare for people living in Africa.

Qubits for the future

Laura Hiscott reviews Quantum Technology | Our Sustainable Future by “The Quantum Daily”.

Quadrature entanglement in the microwave domain with a phase locking protocol

Entanglement has attracted great attention in the past few decades due to its potential applications in the field of quantum information protocols. From now, achieving excellent phase locking in entanglement generation is significant yet a challenging task in cryogenic quantum technology. In this work, we propose and demonstrate a comprehensive paradigm of phase locking protocol for quadrature entanglement at the microwave wavelengths. We carry out a theoretical derivation of the quadrature entangled microwaves generated based on Josephson Parametric Amplifiers (JPAs), and the phase locking error signal, which is used to lock the relative phase of zero between the two quadrature squeezed microwaves. Simulating data for the phase locking scheme are shown under different parameter settings for comparison. Finally, we use the proposed phase locking scheme to enable a stable output of quadrature entangled microwave.

Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing

We study the generation and transformation of intrinsic luminescent centers in 4H-polytype of silicon carbide via heavy ion implantation and subsequent annealing. Defects induced by the implantation of germanium (Ge) or tin (Sn) have been characterized by photoluminescence (PL) spectra recorded at cryogenic temperatures. We find three predominant but as-yet-unidentified PL signatures (labeled as DI1–3) at the wavelength of 1002.8 nm (DI1), 1004.7 nm (DI2), and 1006.1 nm (DI3) after high dose implantation (> 4 × 1013 cm-2) and high temperature annealing (> 1700○C). The fact that the DI lines co-occur and are energetically close together suggest that they originate from the same defect. Regardless of the implanted ion (Ge or Sn), a sharp increase in their PL intensity is observed when the implantation damage becomes high (vacancy concentration > 1022 cm-3), indicating that the lines stem from an intrinsic defect caused by the damage. By tracking the PL signals after stepwise annealing, we examine how the overall intrinsic defects behave in the temperature range of 500 – 1800○C; the silicon vacancies formed by the implantation transform into either divacancies or antisite-vacancy pairs with annealing at about 1000○C. These spectra signatures are strongly reduced at 1200○C where the so-called TS defects are maximized in luminescence. As a final stage, the DI defects, which are most likely formed of antisites and vacancies, emerge at 1700○C. Our results provide a knowledge on how to incorporate and manipulate the intrinsic luminescent centers in SiC with ion implantation and annealing, paving the way for fully integrated quantum technology employing SiC.