High dose, heavy ion implantation into metals: The use of a sacrificial carbon surface layer for increased dose retention

1992 ◽  
Vol 72 (9) ◽  
pp. 4014-4019 ◽  
Author(s):  
L. Clapham ◽  
J. L. Whitton ◽  
M. C. Ridgway ◽  
N. Hauser ◽  
M. Petravic
1983 ◽  
Vol 27 ◽  
Author(s):  
J.S. Williams ◽  
D.J. Chivers ◽  
R.G. Elliman ◽  
S.T. Johnson ◽  
E.M. Lawson ◽  
...  

ABSTRACTThis paper presents new data on the previously observed porous structures which can be developed in high dose, ion implanted Ge. In addition, we provide strong evidence to suggest that such porous structures can be formed in high dose, ion implanted Si and GaAs substrates under particular implant conditions. Comparison of the various systems using RBS analysis indicates that heavy ion doses as low as 1014 cm−2 can give rise to such structural modifications in GaAs, whereas doses of 1015 cm−2 are needed to observe an effect with Ge and doses usually exceeding 1016cm−2 are required for Si.


2000 ◽  
Vol 622 ◽  
Author(s):  
Jörg K.N. Lindner ◽  
Stephanie Wenzel ◽  
Bernd Stritzker

ABSTRACTHigh-dose titanium implantations have been performed into ion beam synthesized heteroepitaxial layer systems of Si/3C-SiC/Si(100) in order to study the formation of titanium silicide layers in the silicon top layer. The structure and composition of layers was analysed using RBS, XRD, XTEM and EFTEM. The sputtering rates of 180 keV Ti ions were determined using the lower SiC/Si interface as a marker. A homogeneous surface layer with the stoichiometry of TiSi2 was formed by a nearly stoichiometric implantation and subsequent annealing. The formation of more metal-rich silicides was observed at doses where the peak Ti concentration largely exceeds the TiSi2 stoichiometry and where the total amount of Ti atoms in the top layer is greater than the amount needed to convert the entire Si top layer into TiSi2. Under these conditions, strong solid state reactions of the implanted Ti atoms with the buried SiC layer and the silicon substrate are observed.


1994 ◽  
Vol 354 ◽  
Author(s):  
Hiroshi Watanabe ◽  
Katsuo Takahashl ◽  
Masaya Iwaki

AbstractA study has been made of the carbon formation in the surface layer of Ag-, W- and Pd-ions implanted polyimide films. The doses of 130 KeV Ag-ions and 190 KeV W-ions ranged from lxlO16 to 5×1017 atoms/cm2. The doses of 100 KeV Pd-ions ranged from 5×1016 to 2×1017 atoms/cm2. The carbon structure in implanted layers was characterized by laser Raman spectroscopy (LRS). Non-implanted polyimide film has very strong intensity of fluorescence, and the intensity of all W-, Ag- and Pd-ions implanted specimens decreases with the increase in dose. The intensity of Raman spectra for both W- and Ag-ions implanted specimens increases with the increase in dose. For Pd-ion implanted specimens, the Raman spectrum of carbon is hardly observed even with a high dose. Raman spectra for W- or Ag-ions implanted specimens with a high dose show that the diamond-like carbon (DLC) exist in the implanted layers. It is found that the DLC structures in the W- and Ag-ions implanted layers have graphite-like and amorphous-like structures, respectively. We propose that transparency carbon structure in implanted layers is generated by Pd-ion implantation. It is concluded that marked DLC formation in surface layer of polyimide films can be caused by Ag- or W-ions implantation except Pd-ion implantation, and carbon structure in implanted layers depends strongly on the implanted elements.


2009 ◽  
Vol 1193 ◽  
Author(s):  
Martin C. Stennett ◽  
Neil C. Hyatt ◽  
Daniel P. Reid ◽  
Ewan R. Maddrell ◽  
Nianhua Peng ◽  
...  

AbstractAn understanding of the effect of cumulative radiation damage on the integrity of ceramic wasteforms for plutonium and minor actinide disposition is key to the scientific case for safe disposal. Alpha recoil due to the decay of actinide species leads to the amorphisation of the initially crystalline host matrix, with potentially deleterious consequences such as macroscopic volume swelling and reduced resistance to aqueous dissolution. For the purpose of laboratory studies the effect of radiation damage can be simulated by various accelerated methodologies. The incorporation of short-lived actinide isotopes accurately reproduces damage arising from both alpha-particle and the heavy recoil nucleus, but requires access to specialist facilities. In contrast, fast ion implantation of inactive model ceramics effectively simulates the heavy recoil nucleus, leading to amorphisation of the host crystal lattice over very short time-scales. Although the resulting materials are easily handled, quantitative analysis of the resulting damaged surface layer has proved challenging.In this investigation, we have developed an experimental methodology for characterisation of radiation damaged structures in candidate ceramics for actinide disposition. Our approach involves implantation of bulk ceramic samples with 2 MeV Kr+ ions, to simulate heavy atom recoil; combined with grazing incidence X-ray absorption spectroscopy (GI-XAS) to characterise only the damaged surface layer. Here we present experimental GI-XAS data acquired at the Ti and Zr K-edges of ion implanted zirconolite, as a function of grazing angle, demonstrating that this technique can be successfully applied to characterise only the amorphised surface layer. Comparison of our findings with data from metamict natural analogues provide evidence that heavy ion implantation reproduces the amorphous structure arising from naturally accumulated radiation damage.


Author(s):  
Takuma Kobayashi ◽  
Maximilian Rühl ◽  
Johannes Lehmeyer ◽  
Leonard K.S. Zimmermann ◽  
Michael Krieger ◽  
...  

Abstract We study the generation and transformation of intrinsic luminescent centers in 4H-polytype of silicon carbide via heavy ion implantation and subsequent annealing. Defects induced by the implantation of germanium (Ge) or tin (Sn) have been characterized by photoluminescence (PL) spectra recorded at cryogenic temperatures. We find three predominant but as-yet-unidentified PL signatures (labeled as DI1–3) at the wavelength of 1002.8 nm (DI1), 1004.7 nm (DI2), and 1006.1 nm (DI3) after high dose implantation (> 4 × 1013 cm-2) and high temperature annealing (> 1700○C). The fact that the DI lines co-occur and are energetically close together suggest that they originate from the same defect. Regardless of the implanted ion (Ge or Sn), a sharp increase in their PL intensity is observed when the implantation damage becomes high (vacancy concentration > 1022 cm-3), indicating that the lines stem from an intrinsic defect caused by the damage. By tracking the PL signals after stepwise annealing, we examine how the overall intrinsic defects behave in the temperature range of 500 – 1800○C; the silicon vacancies formed by the implantation transform into either divacancies or antisite-vacancy pairs with annealing at about 1000○C. These spectra signatures are strongly reduced at 1200○C where the so-called TS defects are maximized in luminescence. As a final stage, the DI defects, which are most likely formed of antisites and vacancies, emerge at 1700○C. Our results provide a knowledge on how to incorporate and manipulate the intrinsic luminescent centers in SiC with ion implantation and annealing, paving the way for fully integrated quantum technology employing SiC.


Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.


Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).


1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.


1994 ◽  
Vol 66 (1-3) ◽  
pp. 398-402 ◽  
Author(s):  
Lynann Clapham ◽  
J.L. Whitton ◽  
J.A. Jackman ◽  
M.C. Ridgway

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