Modeling of Damage Evolution During Ion Implantation into Silicon: a Monte Carlo Approach

1996 ◽  
Vol 438 ◽  
Author(s):  
S. Tian ◽  
M. Morris ◽  
S. J. Morris ◽  
B. Obradovic ◽  
A. F. Tasch
Keyword(s):  
Ion Implantation ◽  
Damage Evolution ◽  
Damage Model ◽  
Amorphous Layer ◽  
High Dose ◽  
Defect Production ◽  
Implantation Damage ◽  
Wide Range ◽  
Physically Based ◽  
First Time

AbstractWe present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Tian ◽  
M. Morris ◽  
S. J. Morris ◽  
B. Obradovic ◽  
A. F. Tasch
Keyword(s):  
Ion Implantation ◽  
Damage Evolution ◽  
Damage Model ◽  
Amorphous Layer ◽  
High Dose ◽  
Defect Production ◽  
Implantation Damage ◽  
Wide Range ◽  
Physically Based ◽  
First Time

AbstractWe present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

Elastic–plastic-damage model of nano-indentation of the ion-irradiated 6061 aluminium alloy

2020 ◽  
Vol 29 (8) ◽  
pp. 1271-1305
Author(s):  
A Ustrzycka ◽  
B Skoczeń ◽  
M Nowak ◽  
Ł Kurpaska ◽  
E Wyszkowska ◽  
...  
Keyword(s):  
Damage Evolution ◽  
Damage Mechanics ◽  
Ion Irradiation ◽  
Damage Model ◽  
Indentation Test ◽  
Gtn Model ◽  
Damage Level ◽  
Nano Indentation ◽  
Wide Range ◽  
Radiation Induced

The paper presents experimental and numerical characterization of damage evolution for ion-irradiated materials subjected to plastic deformation during nano-indentation. Ion irradiation technique belongs to the methods where creation of radiation-induced defects is controlled with a high accuracy (including both, concentration and depth distribution control), and allows to obtain materials having a wide range of damage level, usually expressed in terms of displacements per atom (dpa) scale. Ion affected layers are usually thin, typically less than 1 micrometer thick. Such a low thickness requires to use nano-indentation technique to measure the mechanical properties of the irradiated layers. The He or Ar ion penetration depth reaches approximately 150 nm, which is sufficient to perform several loading-partial-unloading cycles at increasing forces. Damage evolution is reflected by the force-displacement diagram, that is backed by the stress–strain relation including damage. In this work the following approach is applied: dpa is obtained from physics (irradiation mechanisms), afterwards, the radiation-induced damage is defined in the framework of continuum damage mechanics to solve the problem of further evolution of damage fields under mechanical loads. The nature of radiation-induced damage is close to porosity because of formation of clusters of vacancies. The new mathematical relation between radiation damage (dpa) and porosity parameter is proposed. Deformation process experienced by the ion irradiated materials during the nano-indentation test is then numerically simulated by using extended Gurson–Tvergaard–Needleman (GTN) model, that accounts for the damage effects. The corresponding numerical results are validated by means of the experimental measurements. It turns out, that the GTN model quite successfully reflects closure of voids, and increase of material density during the nano-indentation.

Ion Implantation Damage and Annealing in GaSb

1993 ◽  
Vol 316 ◽  
Author(s):  
S. Iyer ◽  
R. Parakkat ◽  
B. Patnaik ◽  
N. Parikh ◽  
S. Hegde
Keyword(s):  
Ion Implantation ◽  
Surface Damage ◽  
Liquid Nitrogen Temperature ◽  
Amorphous Layer ◽  
Implantation Technique ◽  
Near Surface ◽  
Projected Range ◽  
Implantation Damage ◽  
Pb Ions ◽  
Better Than

ABSTRACTIon implantation technique is being investigated as an alternate technique for doping GaSb. Hence an understanding of the production and removal of the damage is essential. In this paper, we report on the damages produced by implantation of Te, Er, Hg and Pb ions into undoped (100) GaSb single crystals and their recovery by Rutherford backscattering (RBS)/channeling. The implantations of 1013 to 1013 ions/cm2 in GaSb were done at liquid nitrogen temperature at energies corresponding to the same projected range of 447Å. A comparison of the damage produced by the different ions and their recovery was made by RBS/channeling along <100> axis of GaSb. Near surface damage equivalent to that of an amorphous layer was observed even at lower doses. Upon annealing at 600°C for 30 sec., the Te implanted samples showed best recovery compared to others (Xmin = 11%), the value of Xmin being better than those normally observed in unimplanted Te-doped substrates.

scholarly journals Disentangling unspecific and specific transgenerational immune priming components in host-parasite interactions

2018 ◽  
Author(s):  
Frida Ben-Ami ◽  
Christian Orlic ◽  
Roland R. Regoes
Keyword(s):  
Bacterial Pathogen ◽  
Immune Memory ◽  
High Dose ◽  
Immune Priming ◽  
Host Parasite Interactions ◽  
Pasteuria Ramosa ◽  
Wide Range ◽  
Different Strains ◽  
Host Parasite ◽  
First Time

AbstractExposure to a pathogen primes many organisms to respond faster or more efficiently to subsequent exposures. Such priming can be unspecific or specific, and has been found to extend across generations. Disentangling and quantifying specific and unspecific effects is essential for understanding the genetic epidemiology of a system. By combining a large infection experiment and mathematical modeling, we disentangle different transgenerational effects in the crustacean model Daphnia magna exposed to different strains of the bacterial parasite Pasteuria ramosa. In the experiments, we exposed hosts to a high-dose of one of three parasite strains, and subsequently challenged their offspring with multiple doses of the same or a different strain, i. e. homologously or heterogously. We find that exposure to Pasteuria decreases the susceptibility of a host’s offspring by approximately 50%. This transgenerational protection is not larger for homologous than for heterologous parasite challenges. Our work represents an important contribution not only to the analysis of immune priming in ecological systems, but also to the experimental assessment of vaccines. We present for the first time an inference framework to investigate specific and unspecific effects of immune priming on the susceptibility distribution of hosts — effects that are central to understanding immunity and the effect of vaccines.Author summaryImmune memory is a feature of immune systems that forms the basis of vaccination. In opposition to textbook accounts, the ability to specifically remember previous exposures has been found to extend to invertebrates and shown to be able to be passed on from mother to off-spring, i. e. to be transgenerational. In this paper, we investigate the extent of this specificity in unprecedented detail in water fleas. We exposed water flea mothers to different strains of a bacterial pathogen and challenged their offspring with a wide range of doses of a strain that were either identical to (homologous) or different from (heterologous) the strain, to which the mother had been exposed. We find that, while exposure of the mother reduces the susceptibility of the offspring, this effect is not specific. This work outlines the limits of specific transgenerational immune memory in this invertebrate system.

Ion Implantation of KnbO3 and LiNbO3 at Elevated Temperatures

1988 ◽  
Vol 128 ◽  
Author(s):  
C H. Buchal ◽  
R. Irmscher ◽  
P. Günter
Keyword(s):  
Ion Implantation ◽  
Dynamic Recrystallization ◽  
Substrate Temperature ◽  
Elevated Temperatures ◽  
High Dose ◽  
Single Crystalline ◽  
First Time ◽  
High Dose Implantation

ABSTRACTIon implantation, annealing and channeling of single crystalline samples of KnbO3 and LiNbO3 have been studied. Raising the substrate temperature above 600 K, greatly increases the tolerance of the crystals for high-dose implantation. In LiNbO3 dynamic recrystallization has been observed for the first time.

Computationally efficient ion implantation damage model: modified Kinchin-Pease model

1997 ◽  
Author(s):  
Geng Wang ◽  
Shiyang Tian ◽  
Michael F. Morris ◽  
Steven J. Morris ◽  
Borna J. Obradovic ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Damage Model ◽  
Computationally Efficient ◽  
Implantation Damage

Modeling B clustering in Si and SiGe

2004 ◽  
Vol 810 ◽  
Author(s):  
Ljubo Radic ◽  
Aaron D. Lilak ◽  
Mark E. Law
Keyword(s):  
Thermal Processing ◽  
Control Sample ◽  
Amorphous Layer ◽  
Dissolution Time ◽  
Uphill Diffusion ◽  
Physically Based Model ◽  
Diffusion Behavior ◽  
Clustering Model ◽  
Physically Based ◽  
First Time

ABSTRACTOur experiments show boron-interstitial cluster dissolution is reduced during oxidation, a behavior not predicted by the current models. Both our experiments and others on the time dependence indicate the reactivation is coming from more than one cluster. Since oxidation induced interstitial injection reduces reactivation, one of the significant clusters has to release an interstitial release during dissolution. Recent ab-initio calculations provide a qualitatively different B clustering model, with two significant cluster species. Based on these energetics, we have developed a new physically based model that for the first time accounts for the experimentally observed cluster dissolution time and ambient dependence.Anomalous B diffusion behavior is also observed in an investigation of Ge influence on B diffusion. Silicon wafers were subjected to a Si preamorphization implant (PAI), followed by Ge and B implants contained within the existing amorphous layer. The control sample received only Si PAI and B implant. Upon annealing, the peak of the B profile shifts towards the surface and increases in magnitude, exhibiting uphill diffusion. The control samples subjected to the same thermal processing exhibit TED, but no uphill diffusion behavior. This is consistent with the model of B diffusion in Si1−xGex, accounting for trapping of B at Ge sites through formation of GeB complex.

scholarly journals Nanocrystals and Quantum Dots Formed by High-Dose Ion Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
C.W. White ◽  
J. D. Budai ◽  
J. G. Zhu ◽  
S. P. Withrow ◽  
D. M. Hembree ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Quantum Confinement ◽  
Compound Semiconductors ◽  
High Dose ◽  
Confinement Effects ◽  
Quantum Confinement Effects ◽  
Wide Range ◽  
Elemental Semiconductors

AbstractIon implantation and thermal annealing have been used to produce a wide range of nanocrystals and quantum dots in amorphous (SiO2) and crystalline (AI2O3) matrices. Nanocrystals of metals (Au), elemental semiconductors (Si and Ge), and even compound semiconductors (SiGe, CdSe, CdS) have been produced. In amophous matrices, the nanocrystals are randomly oriented, but in crystalline matrices they are three dimensionally aligned. Evidence for photoluminescence and quantum confinement effects are presented.

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