Graphene mitigated fracture and interfacial delamination of silicon film anodes through modulating the stress generation and development

AbstractNanoscale self-assembly, as a technique to transform two-dimensional (2D) planar patterns into three-dimensional (3D) nanoscale architectures, has achieved tremendous success in the past decade. However, an assembly process at nanoscale is easily affected by small unavoidable variations in sample conditions and reaction environment, resulting in a low yield. Recently, in-situ monitored self-assembly based on ion and electron irradiation has stood out as a promising candidate to overcome this limitation. The usage of ion and electron beam allows stress generation and real-time observation simultaneously, which significantly enhances the controllability of self-assembly. This enables the realization of various complex 3D nanostructures with a high yield. The additional dimension of the self-assembled 3D nanostructures opens the possibility to explore novel properties that cannot be demonstrated in 2D planar patterns. Here, we present a rapid review on the recent achievements and challenges in nanoscale self-assembly using electron and ion beam techniques, followed by a discussion of the novel optical properties achieved in the self-assembled 3D nanostructures.

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Active Nanocomposites: Energy Harvesting and Stress Generation Media for Future Multifunctional Aerospace Structures

10.21236/ada547363 ◽

2010 ◽

Author(s):

Zoubeida Ounaies ◽

Ramanan Krishnamoorti ◽

Richard Vaia

Keyword(s):

Energy Harvesting ◽

Stress Generation ◽

Aerospace Structures

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Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽

10.3390/cryst10040237 ◽

2020 ◽

Vol 10 (4) ◽

pp. 237

Author(s):

M. Abul Hossion ◽

B. M. Arora

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Silicon Film ◽

Chemical Vapor ◽

Hot Wire ◽

Deposition Technique ◽

Boron Doped ◽

Vapor Deposition Technique ◽

Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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Amorphous Silicon Film: A New Erasable Medium for Optical Recording

Japanese Journal of Applied Physics ◽

10.7567/jjaps.26s4.47 ◽

1987 ◽

Vol 26 (S4) ◽

pp. 47 ◽

Cited By ~ 3

Author(s):

M. C. Lee ◽

C. R. Huang ◽

C. C. Lin

Keyword(s):

Amorphous Silicon ◽

Silicon Film ◽

Optical Recording ◽

Amorphous Silicon Film

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In Situ X-Ray Diffraction Investigations during Diffusion Anneals of Ni-Cu Thin Film Diffusion Couples

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.89-91.503 ◽

2010 ◽

Vol 89-91 ◽

pp. 503-508 ◽

Cited By ~ 1

Author(s):

J. Sheng ◽

U. Welzel ◽

Eric J. Mittemeijer

Keyword(s):

Thermal Stresses ◽

Stress Generation ◽

Ex Situ ◽

Diffusion Annealing ◽

X Ray Diffraction ◽

Individual Layer ◽

X Ray ◽

Bilayer System ◽

Stress Changes

The stress evolution during diffusion annealing of Ni-Cu bilayers (individual layer thicknesses of 50 nm) was investigated employing ex-situ and in-situ X-ray diffraction measurements. Annealing at relatively low homologous temperatures (about 0.3 - 0.4 Tm) for durations up to about 100 hours results in considerable diffusional intermixing, as demonstrated by Auger-electron spectroscopy investigations (in combination with sputter-depth profiling). In addition to thermal stresses due to differences of the coefficients of thermal expansion of layers and substrate, tensile stress con-tributions in the sublayers arise during the diffusion anneals. The obtained stress data have been discussed in terms of possible mechanisms of stress generation. The influence of diffusion on stress development in the sublayers of the diffusion couple during heating and isothermal annealing was investigated by comparing stress changes in the bilayer system with corresponding results obtained under identical conditions for single layers of the components in the bilayer system. The specific residual stresses that emerge due to diffusion between the (sub)layers in the bilayer could thereby be identified.

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A Stochastic Model to Describe the Scattering in the Response of Polysilicon MEMS

Engineering Proceedings ◽

10.3390/engproc2020002095 ◽

2021 ◽

Vol 2 (1) ◽

pp. 95

Author(s):

Luca Dassi ◽

Marco Merola ◽

Eleonora Riva ◽

Angelo Santalucia ◽

Andrea Venturelli ◽

...

Keyword(s):

Silicon Film ◽

Micro Fabrication ◽

Micro Electro Mechanical Systems ◽

Local Fluctuations ◽

Stochastic Framework ◽

On Line ◽

Chip Testing ◽

On Chip ◽

Time Required ◽

Polycrystalline Silicon Film

The current miniaturization trend in the market of inertial microsystems is leading to movable device parts with sizes comparable to the characteristic length-scale of the polycrystalline silicon film morphology. The relevant output of micro electro-mechanical systems (MEMS) is thus more and more affected by a scattering, induced by features resulting from the micro-fabrication process. We recently proposed an on-chip testing device, specifically designed to enhance the aforementioned scattering in compliance with fabrication constraints. We proved that the experimentally measured scattering cannot be described by allowing only for the morphology-affected mechanical properties of the silicon films, and etch defects must be properly accounted for too. In this work, we discuss a fully stochastic framework allowing for the local fluctuations of the stiffness and of the etch-affected geometry of the silicon film. The provided semi-analytical solution is shown to catch efficiently the measured scattering in the C-V plots collected through the test structure. This approach opens up the possibility to learn on-line specific features of the devices, and to reduce the time required for their calibration.

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