Corrigendum: The impact of sensitive volume thickness for silicon on insulator microdosimeters in hadron therapy (2020 Phys. Med. Biol. 65 035004)

2021 ◽  
Vol 66 (5) ◽  
pp. 059501
Author(s):  
D Bolst ◽  
S Guatelli ◽  
L T Tran ◽  
A B Rosenfeld
Keyword(s):  
Silicon On Insulator ◽  
Sensitive Volume ◽  
Hadron Therapy ◽  
The Impact

An Analytical Modeling and Performance Analysis of Graded Work Function Gate Recessed Channel SOI-MOSFET

2019 ◽  
Vol 9 (4) ◽  
pp. 504-511
Author(s):  
Sikha Mishra ◽  
Urmila Bhanja ◽  
Guru Prasad Mishra
Keyword(s):  
Analytical Model ◽  
Surface Potential ◽  
Threshold Voltage ◽  
Silicon On Insulator ◽  
Junction Depth ◽  
Short Channel ◽  
Soi Mosfet ◽  
Minimum Surface ◽  
Recessed Channel ◽  
The Impact

Introduction: A new analytical model is designed for Workfunction Modulated Rectangular Recessed Channel-Silicon On Insulator (WMRRC-SOI) MOSFET that considers the concept of groove gate and implements an idea of workfunction engineering. Methods: The impact of Negative Junction Depth (NJD) and oxide thickness (tox) are analyzed on device performances such as Sub-threshold Slope (SS), Drain Induced Barrier Lowering (DIBL) and threshold voltage. Results: The results of the proposed work are evaluated with the Rectangular Recessed Channel-Silicon On Insulator (RRC-SOI) MOSFET keeping the metal workfunction constant throughout the gate region. Furthermore, an analytical model is developed using 2D Poisson’s equation and threshold voltage is estimated in terms of minimum surface potential. Conclusion: In this work, the impact of Negative Junction Depth (NJD) on minimum surface potential and the drain current are also evaluated. It is observed from the analysis that the analog switching performance of WMRRC-SOI MOSFET surpasses RRC-SOI MOSFET in terms of better driving capability, high Ion/Ioff ratio, minimized Short Channel Effects (SCEs) and hot carrier immunity. Results are simulated using 2D Sentaurus TCAD simulator for validation of the proposed structure.

Resistless Patterning of Magnetic Storage Media Using Ion Projection Structuring

2001 ◽  
Vol 705 ◽  
Author(s):  
A. Dietzel ◽  
R. Berger ◽  
H. Grimm ◽  
C. Schug ◽  
W. H. Bruenger ◽  
...  
Keyword(s):  
Process Development ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Magnetic Storage ◽  
Magnetic Islands ◽  
Superlattice Structure ◽  
Head Positioning ◽  
Out Of Plane ◽  
Set Up ◽  
The Impact

AbstractCo/Pt thin film multilayers with strong perpendicular anisotropy and out-of-plane coercivities of 5-11 kOe were magnetically altered in areas of local ion beam interaction. The ion irradiations were performed by ion projection through silicon stencil masks fabricated by silicon on insulator (SOI) membrane technology. The ion projector at the Fraunhofer Institute for Silicon Technology (ISiT) was operated at 73 keV ion energy and with a 8.7- fold demagnification. After exposure to 3 × 1014Ar+/ cm2 magnetic islands smaller than 100 nm in diameter were resolved in the Co/Pt multilayersby means of magnetic force microscopy. The impact of different ion species (He+, Ar+ and Xe+) and ion energies (10 – 200 keV) on the multilayer structure was evaluated using Monte Carlo simulations. The ballistic interface intermixing was used to predict magnetic coercivity changes for various irradiation conditions. The simulations revealed that with 73 keV Ar+ and Xe+ ions the irradiation dose could be reduced by a factor of 100 and 400 respectively in comparison to 73 keV He+which was verified in the experiments. X-ray reflectivity measurements confirmed that the Co/Pt superlattice structure is slightly weakened during the irradiation and that the surface smoothness of the media is preserved. Using the Ion Projection Process Development Tool (PDT) at IMS-Vienna concentric data tracks including head positioning servo informations were patterned onto a 1” IBM microdrive™ glass disk which was coated with Co/Pt multilayers. In a single exposure step several tracks within an exposure field of 17 mm in diameter were structured by 2 × 1015He+/ cm2 at 45 keV using a 4- fold demagnification set-up.

scholarly journals Lossless WDM PON Photonic Integrated Receivers Including SOAs

2019 ◽  
Vol 9 (12) ◽  
pp. 2457 ◽  
Author(s):  
Goki ◽  
Imran ◽  
Porzi ◽  
Toccafondo ◽  
Fresi ◽  
...  
Keyword(s):  
Numerical Analysis ◽  
Wavelength Division Multiplexing ◽  
Flip Chip ◽  
Optical Network ◽  
Silicon On Insulator ◽  
Passive Optical Network ◽  
Case Scenario ◽  
Worst Case ◽  
The Impact ◽  
Wdm Transmission

The role of a semiconductor optical amplifier (SOA) for amplifying downstream traffic at optical network terminals (ONT) within a silicon-photonics integrated receiver in a high capacity passive optical network (PON) is investigated. The nearly traveling wave SOA effects are evaluated by considering fabrication and link loss constraints through numerical analysis and experimental validation. The impact of hybrid integration of a SOA chip on a silicon on insulator (SOI) photonic chip using the flip chip bonding technique on SOA design is evaluated through numerical analysis of a multi section cavity model. The performance of the proposed ONT receiver design employing twin parallel SOAs is evaluated experimentally on a 32 × 25 Gb/s OOK WDM transmission system considering cross gain modulation (XGM) and amplified spontaneous emission (ASE) constraints. The XGM impact is evaluated through 32 channel wavelength division multiplexing (WDM) transmission and a likely PON worst case scenario of high channel power difference (~10 dB) between adjacent channels. The impact of ASE is evaluated through the worst-case polarization condition, i.e., when all of the signal is coupled to only one. Successful transmission was achieved in both worst-case conditions with limited impact on performance. SOA results indicate that a maximum residual facet reflectivity of 4 × 10−4 for the chip-bonded device can lead to a power penalty below 2 dB in a polarization-diversity twin SOAs receiver.

Formation of Silicon-on-Insulator Films from Powders

1991 ◽  
Vol 234 ◽  
Author(s):  
Kamesh V. Gadepally ◽  
Roger M. Hawk ◽  
William D. Brown
Keyword(s):  
Corona Discharge ◽  
Temperature Effects ◽  
Film Formation ◽  
Physical Characteristics ◽  
Silicon Films ◽  
Silicon On Insulator ◽  
Insulating Surfaces ◽  
Heat Treated ◽  
Microelectronics Industry ◽  
The Impact

ABSTRACTSilicon powders have been successfully deposited by a corona discharge assisted electrostatic process on insulating, semiconducting, and conducting substrates. Subsequently, the deposits were heat treated and films have been formed. We present data pertatining to silicon films on insulators. The insulating surfaces used were sapphire, SiO2 on Si, and Si3N4 on Si. The electrical, chemical, and physical characteristics of these films are presented along with the time and temperature effects on the film formation. The impact of the above method with emphasis to the microelectronics industry will be discussed.

Short-Time-Scale Thermal Mapping of Microdevices Using a Scanning Thermoreflectance Technique

1998 ◽  
Vol 120 (2) ◽  
pp. 306-313 ◽  
Author(s):  
Y. S. Ju ◽  
K. E. Goodson
Keyword(s):  
Temperature Distribution ◽  
Time Scale ◽  
Silicon On Insulator ◽  
Temperature Fields ◽  
Scanning Laser ◽  
Transient Temperature ◽  
Drift Region ◽  
Short Time Scale ◽  
Short Time ◽  
The Impact

The performance and reliability of microdevices can be strongly influenced by the peak temperature rise and spatial temperature distribution during brief electrical overstress (EOS) phenomena, which can occur at sub-microsecond time scales. The present study investigates short-time-scale laser reflectance thermometry of micro devices by examining the impact of passivation overlayers on the thermoreflectance signal and by demonstrating a calibration method suitable for metallization. This manuscript also describes a scanning laser thermometry facility that captures temperature fields in microdevices with 10 ns temporal resolution and 1 μm spatial resolution. The facility combines scanning laser optics with electrical stressing capability to allow simultaneous interrogation of the thermal and electrical behavior of devices. Data show the transient temperature distribution along the drift region of silicon-on-insulator (SOI) power transistors and along metal interconnects subjected to brief electrical stresses. The theory and experimental capability developed in this study are useful for studying short-time-scale thermal phenomena in microdevices and verifying models employed for their simulation.

Does the photon have a future? An overview of potential benefits associated with hadron therapy

2004 ◽  
Vol 4 (1) ◽  
pp. 25-32 ◽  
Author(s):  
P. Bridge
Keyword(s):  
Relative Biological Effectiveness ◽  
Intensity Modulated Radiotherapy ◽  
Factors Affecting ◽  
Integral Dose ◽  
Conformal Therapy ◽  
Hadron Therapy ◽  
It Planning ◽  
Potential Benefits ◽  
Biological Effectiveness ◽  
The Impact

Hadron therapy uses sub-atomic particles to deliver radiotherapy and has the capability of delivering to an increased depth compared to photons. This offers the potential of conformal therapy without the increased integral dose associated with intensity-modulated radiotherapy (IMRT). In addition, there is the possibility of hadron therapy having increased relative biological effectiveness (RBE) when compared to photons. There is increasing interest in this topic currently with the possibility of a second UK hadron therapy facility being under discussion.This paper introduces the concept of hadron therapy and presents an evaluation of the potential benefits associated with it. Planning studies and clinical trials are reviewed in order to assess the impact that hadron therapy would have on patient management. Costs and other factors affecting the implementation of a hadron therapy facility are presented.The proven benefits of hadron therapy are easily demonstrated by the planning studies with increased conformity and reduced integral dose over a range of tumour sites. Simple hadron plans consistently out-perform complicated IMRT plans. The costs associated with hadron facilities are higher than for photons, but they offer simplified planning due to the inherent conformality achievable with simple hadron beams. As costs decrease and technology improves, the benefits of hadron therapy may result in the replacement of the photon for radiotherapy.

scholarly journals Silicon 3D Microdetectors for Microdosimetry in Hadron Therapy

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1053
Author(s):  
Consuelo Guardiola ◽  
Celeste Fleta ◽  
David Quirion ◽  
Giulio Pellegrini ◽  
Faustino Gómez
Keyword(s):  
Mammalian Cells ◽  
Collection Efficiency ◽  
Low Noise ◽  
Particle Therapy ◽  
Charge Collection ◽  
Sensitive Volume ◽  
Cell Array ◽  
Charge Collection Efficiency ◽  
Hadron Therapy ◽  
Silicon Bulk

The present overview describes the evolution of new microdosimeters developed in the National Microelectronics Center in Spain (IMB-CNM, CSIC), ranging from the first ultra-thin 3D diodes (U3DTHINs) to the advanced 3D-cylindrical microdetectors, which have been developed over the last 10 years. In this work, we summarize the design, main manufacture processes, and electrical characterization of these devices. These sensors were specifically customized for use in particle therapy and overcame some of the technological challenges in this domain, namely the low noise capability, well-defined sensitive volume, high spatial resolution, and pile-up robustness. Likewise, both architectures reduce the loss of charge carriers due to trapping effects, the charge collection time, and the voltage required for full depletion compared to planar silicon detectors. In particular, a 3D‒cylindrical architecture with electrodes inserted into the silicon bulk and with a very well‒delimited sensitive volume (SV) mimicked a cell array with shapes and sizes similar to those of mammalian cells for the first time. Experimental tests of the carbon beamlines at the Grand Accélérateur National d’Lourds (GANIL, France) and Centro Nazionale Adroterapia Oncologica (CNAO, Italy) showed the feasibility of the U3DTHINs in hadron therapy beams and the good performance of the 3D‒cylindrical microdetectors for assessing linear energy distributions of clinical beams, with clinical fluence rates of 5 × 107 s−1cm−2 without saturation. The dose-averaged lineal energies showed a generally good agreement with Monte Carlo simulations. The results indicated that these devices can be used to characterize the microdosimetric properties in hadron therapy, even though the charge collection efficiency (CCE) and electronic noise may pose limitations on their performance, which is studied and discussed herein. In the last 3D‒cylindrical microdetector generation, we considerably improved the CCE due to the microfabrication enhancements, which have led to shallower and steeper dopant profiles. We also summarize the successive microdosimetric characterizations performed with both devices in proton and carbon beamlines.

scholarly journals Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

2018 ◽  
Vol 9 ◽  
pp. 2106-2113 ◽  
Author(s):  
Noel Kennedy ◽  
Ray Duffy ◽  
Luke Eaton ◽  
Dan O’Connell ◽  
Scott Monaghan ◽  
...  
Keyword(s):  
Hall Effect ◽  
Carrier Concentration ◽  
Surface Quality ◽  
Silicon On Insulator ◽  
Minimal Impact ◽  
Effect Data ◽  
Material Characterisation ◽  
Dopant Atoms ◽  
Soi Substrates ◽  
The Impact

This paper details the application of phosphorus monolayer doping of silicon on insulator substrates. There have been no previous publications dedicated to the topic of MLD on SOI, which allows for the impact of reduced substrate dimensions to be probed. The doping was done through functionalization of the substrates with chemically bound allyldiphenylphosphine dopant molecules. Following functionalization, the samples were capped and annealed to enable the diffusion of dopant atoms into the substrate and their activation. Electrical and material characterisation was carried out to determine the impact of MLD on surface quality and activation results produced by the process. MLD has proven to be highly applicable to SOI substrates producing doping levels in excess of 1 × 1019 cm−3 with minimal impact on surface quality. Hall effect data proved that reducing SOI dimensions from 66 to 13 nm lead to an increase in carrier concentration values due to the reduced volume available to the dopant for diffusion. Dopant trapping was found at both Si–SiO2 interfaces and will be problematic when attempting to reach doping levels achieved by rival techniques.

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