Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N 2 and H 2 carrier gas

2018 ◽  
Vol 27 (12) ◽  
pp. 127805
Author(s):  
Hai-Long Wang ◽  
Xiao-Han Zhang ◽  
Hong-Xia Wang ◽  
Bin Li ◽  
Chong Chen ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Carrier Gas ◽  
Indium Composition ◽  
Composition Fluctuations

Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films

2006 ◽  
Vol 911 ◽  
Author(s):  
Govindhan Dhanaraj ◽  
Yi Chen ◽  
Hui Chen ◽  
William M Vetter ◽  
Hui Zhang ◽  
...  
Keyword(s):  
Screw Dislocation ◽  
Flow Rate ◽  
Growth Rates ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Epitaxial Layers ◽  
Gas Flow Rate ◽  
Carrier Gas ◽  
Carrier Gas Flow

AbstractSiC homo-epitaxial layers were grown in a chemical vapor deposition process using silicon tetrachloride and propane precursors with hydrogen as a carrier gas. Growth rates were found to increase as temperatures increased at high carrier gas flow rate, while at lower carrier gas flow rate growth rates were observed to decrease as temperature increased. Based on the equilibrium model, “thermodynamically controlled growth” accounts for the growth rate reduction. The grown epitaxial layers were characterized using various techniques. Reduction in the threading screw dislocation (SD) density in the epilayers was observed. Suitable models were developed for explaining the reduction in the screw dislocation density as well as the conversion of basal plane dislocations (BPD) into threading edge dislocations (TED).

IMPROVEMENT OF GaAs EPITAXIAL LAYERS BY INDIUM INCORPORATION

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-693-C4-696 ◽  
Author(s):  
J. P. LAURENTI ◽  
P. ROENTGEN ◽  
K. WOLTER ◽  
K. SEIBERT ◽  
H. KURZ ◽  
...  
Keyword(s):  
Epitaxial Layers

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

1989 ◽  
Vol 54 (11) ◽  
pp. 2933-2950
Author(s):  
Emerich Erdös ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Experimental Data ◽  
Gallium Arsenide ◽  
Kinetic Study ◽  
Gas Phase ◽  
Growth Model ◽  
Epitaxial Layers ◽  
Inhomogeneous Model ◽  
Homogeneous Models ◽  
Active Centres

This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.

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