Effect of hydrogen content on dielectric strength of the silicon nitride film deposited by ICP-CVD*

2021 ◽  
Vol 30 (4) ◽  
pp. 048103
Author(s):  
Yudong Zhang ◽  
Jiale Tang ◽  
Yongjie Hu ◽  
Jie Yuan ◽  
Lulu Guan ◽  
...  
1980 ◽  
Vol 127 (8) ◽  
pp. 1853-1854 ◽  
Author(s):  
Takeo Yoshimi ◽  
Hideo Sakai ◽  
Keizo Tanaka

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.


1994 ◽  
Vol 3 (9) ◽  
pp. 682-689 ◽  
Author(s):  
Chen Jun-fang ◽  
Cheng Shao-yu ◽  
Ren Zhao-xing ◽  
Zhang Su-qing ◽  
Ning Zhao-yuan ◽  
...  

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