Frequency dependence on polarization switching measurement in ferroelectric capacitors

2022 ◽  
Vol 43 (1) ◽  
pp. 014102
Author(s):  
Zhaomeng Gao ◽  
Shuxian Lyu ◽  
Hangbing Lyu

Abstract Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges. Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous remnant polarization (P r) and coercive field (E c). In this study, positive-up-negative-down (PUND) measurement under a wide frequency range was performed on a 10-nm thick Hf0.5Zr0.5O2 ferroelectric film. Detailed analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE capacitor. After considering the time lag caused by RC delay, reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over time. In such a method, rational P–V loops measured at high frequencies (>1 MHz) was successfully achieved. This work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.

2010 ◽  
Vol 89 (1) ◽  
pp. 16001 ◽  
Author(s):  
S. Ghosh ◽  
P. Nayek ◽  
S. K. Roy ◽  
T. Pal Majumder ◽  
M. Zurowska ◽  
...  

2008 ◽  
Vol 1071 ◽  
Author(s):  
Koji Aizawa

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.


1989 ◽  
Vol 256 (4) ◽  
pp. R1005-R1010
Author(s):  
D. Verotta ◽  
S. L. Beal ◽  
L. B. Sheiner

A semiparametric model for analysis of pharmacokinetic (PK) and pharmacodynamic (PD) data arising from non-steady-state experiments is presented. The model describes time lag between drug concentration in a sampling compartment, e.g., venous blood (Cv), and drug effect (E). If drug concentration at the effect site (Ce) equilibrates with arterial blood concentration (Ca) slower than with Cv, a non-steady-state experiment yields E vs. Cv data describing a counterclockwise hysteresis loop. If Ce equilibrates with Ca faster than with Cv, clockwise hysteresis is observed. To model hysteresis, a parametric model is proposed linking (unobserved) Ca to Cv with elimination rate constant kappa ov and also linking Ca to Ce with elimination rate constant kappa oe. When kappa oe is greater than (or less than) kappa ov clockwise (or counterclockwise) hysteresis occurs. Given kappa oe and kappa ov, numerical (constrained) deconvolution is used to obtain the disposition function of the arterial compartment (Ha), and convolution is used to calculate Ce given Ha. The values of kappa oe and kappa ov are chosen to collapse the hysteresis loops to single curves representing the Ce-E (steady-state) concentration-response curve. Simulations, and an application to real data, are reported.


2018 ◽  
Vol 57 (4S) ◽  
pp. 04FB01 ◽  
Author(s):  
Shinji Migita ◽  
Hiroyuki Ota ◽  
Hiroyuki Yamada ◽  
Keisuke Shibuya ◽  
Akihito Sawa ◽  
...  

IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 55229-55236 ◽  
Author(s):  
Jianguo Wang ◽  
Yanjun Xi ◽  
Chunhua Fang ◽  
Li Cai ◽  
Jianping Wang ◽  
...  

2006 ◽  
Vol 933 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara

AbstractMn-substituted BiFeO3 (BFO) thin films were formed by chemical solutions deposition on Pt/Ti/SiO2/Si(100) structures. Effects of the Mn-substitution on the structure and ferroelectricity of BFO films were examined. We found that the lattice structure of the film is sensitive to the Mn-substitution and the secondary phase is appears in 50% Mn-substituted BFO films. The leakage current were increased with the Mn-substitution. However, the 5% Mn-substituted BFO film shows low leakage current than undoped BFO films in a high electric field than 0.5 MV/cm. Due to the low leakage current in Mn-doped 3, 5 and 7% BFO films, the saturated P-E hysteresis loops with remanent polarization around 100 μC/cm2 were obtained at RT.


Author(s):  
Shivendra Kumar Jaiswal ◽  
Jitendra Kumar

An attempt has been made to synthesize SrFeO3-δ powder by sol-gel process involving oxalate formation, its digestion for 4h, drying at 150°C for 24h, and decomposition at 800°C for 10h. The resulting powder is shown to a) exhibit a single phase with a perovskite-type cubic structure and lattice parameter a = 3.862±0.002A˚, b) contain irregular shape particles, and c) display optical absorption peaks corresponding to charge transfer from oxygen to iron (3.73 and 3.41eV), t2g to eg transition of Fe3+ (1.57eV), and crystal field (3d-3d) charge transfer of Fe3+ (1.25eV). Impedance over a wide frequency range of 20Hz-2MHz at 118–318K has contributions from two parallel ‘RC’ circuits belonging to bulk and grain boundaries with the later displaying significant space charge polarization. The relaxation time of polarization follows an Arrhenius behaviour (τ = τo exp[Ea/kBT]) with τo as ∼10−8s and activation energy Ea as ∼50meV. Further, the sample having magnetic character with transition temperature as 853K, coercivity (Hc) = 3748Oe and magnetization 0.09 μB per iron atom (at 17kOe). The zero field cooled and field cooled magnetization versus temperature data in conjunction with constricted hysteresis loops near the origin suggest core-shell morphology for the particles, core being antiferromagnetic with net uncompensated moment and shell conforming to disordered disposition of spins.


1998 ◽  
Vol 13 (2) ◽  
pp. 362-367 ◽  
Author(s):  
W. Pan ◽  
C. L. Thio ◽  
S. B. Desu

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.


2017 ◽  
Vol 56 (10S) ◽  
pp. 10PF10
Author(s):  
Hiroshi Uchida ◽  
Daichi Ichinose ◽  
Takahisa Shiraishi ◽  
Hiromi Shima ◽  
Takanori Kiguchi ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document