scholarly journals Effect of SnO2 Nanoparticles on Band Gap Energy of x(SnO2)-y(Ag)-β-Carotene/FTO Thin Film

2018 ◽  
Vol 1093 ◽  
pp. 012049 ◽  
Author(s):  
Solehudin ◽  
Markus Diantoro ◽  
Ulwiyatus Sa’adah ◽  
Arif Hidayat
1992 ◽  
Vol 31 (Part 1, No. 2A) ◽  
pp. 295-300 ◽  
Author(s):  
Noboru Miura ◽  
Takashi Sasaki ◽  
Hironaga Matsumoto ◽  
Ryotaro Nakano

2013 ◽  
Vol 764 ◽  
pp. 266-283 ◽  
Author(s):  
Ibram Ganesh ◽  
Rekha Dom ◽  
P.H. Borse ◽  
Ibram Annapoorna ◽  
G. Padmanabham ◽  
...  

Different amounts of Fe, Co, Ni and Cu-doped TiO2 thin films were prepared on fluorine doped tin oxide (FTO) coated soda-lime glass substrates by following a conventional sol-gel dip-coating technique followed by heat treatment at 550 and 600°C for 30 min. These thin films were characterized for photo-current, chronoamperometry and band-gap energy values. The chemical compositions of metals-doped TiO2 thin films on FTO glass substrates were confirmed by XPS spectroscopic study. The metal-ions doped TiO2 thin films had a thickness of <200 nm="" optical="" transparency="" of="">80%, band-gap energy of >3.6 eV, and a direct band-to-band energy transition. The photoelectrochemical (PEC) studies revealed that all the metal-ions doped TiO2 thin films exhibit n-type semi-conducting behavior with a quite stable chronoamperometry and photo-currents that increase with the increase of applied voltage but decrease with the dopant metal-ion concentration in the thin film. Furthermore, these thin films exhibited flat-band potentials amenable to water oxidation reaction in a PEC cell. The 0.5 wt.% Cu-doped TiO2 thin film electrode exhibited an highest incident photon-to-current conversion efficiency (IPCE) of about 21%.


2015 ◽  
Vol 1131 ◽  
pp. 237-241 ◽  
Author(s):  
Akkarat Wongkaew ◽  
Chanida Soontornkallapaki ◽  
Naritsara Amhae ◽  
Wichet Lamai

This work aims to study the effect of ZnO containing in TiO2/SiO2 film on the superhydrophilic property after exposed to different types of light. The metal solutions were prepared by sol-gel technique and the film was deposited on glass slides by dip coating method. The parameter studied was the amount of ZnO in the TiO2/SiO2 film. The contents of ZnO were 5-20% weight (increased by 5%). The amount of TiO2 was constant at 30% weight. The obtained films were analyzed for their roughness. The results indicated that film roughness changed according to the ZnO contents. With 5%ZnO in the thin film, the roughness was 0.726 nm while 20%ZnO obtained the roughness of 2.128 nm. UV-Vis spectrophotometer was used for measuring of transmittance of films. At wavelength of 550 nm, the transmittances of each film were greater than 90%. Band gap energy of each film was calculated from the transmittance data. It was found that the average band gap energy of the films was 2.47 eV. Then, the films contained various amount of ZnO were grouped into 2 sets. The first set was exposed to visible light while the other set was exposed to UV. The duration of exposure was 5 hr. Both sets of films after exposed to any light were kept in a black box controlled relative humidity of 85%. Each film was measured contact angle every day. It was found that the 30%TiO2/5%Zn/SiO2 film exposed to visible light showed the best superhydrophilic property. The contact angle was about 0-5° within 3 days. This may due to the reduction of band gap energy in the presence of ZnO in TiO2/SiO2 films to 2.41 eV and the roughness of the film.


Optik ◽  
2014 ◽  
Vol 125 (3) ◽  
pp. 1303-1306 ◽  
Author(s):  
Said Benramache ◽  
Okba Belahssen ◽  
Ali Arif ◽  
Abderrazak Guettaf

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 130 ◽  
Author(s):  
Jin Chen ◽  
Fengchao Wang ◽  
Bobo Yang ◽  
Xiaogai Peng ◽  
Qinmiao Chen ◽  
...  

In the current study, Cu2ZnSnS4 (CZTS) thin film was successfully fabricated by the facile nanocrystals (NCs)-printing approach combined with rapid thermal annealing (RTA) process. Firstly, the CZTS NCs were synthesized by a thermal solution method and the possible formation mechanism was analyzed briefly. Then the influences of RTA toleration temperature and duration time on the various properties of as-printed thin films were examined via XRD, Raman, FE-SEM, UV-vis-IR spectroscopy, EDS and XPS treatments in detail. As observed, the RTA factors of temperature and time had significant impacts on the structure and morphology of as-prepared thin films, while there were no obvious effects on the band gap energy in studied conditions. The results showed that the obtained thin film at optimal RTA conditions of (600 °C, 20 min) featured a kesterite structure in pure phase and an irregular morphology consisting of large grains. Moreover, the satisfactory composition of a Cu-poor, Zn-rich state and an ideal band gap energy of 1.4 eV suggests that as-fabricated CZTS thin film is a suitable light-absorbing layer candidate for the application in thin film solar cells.


2017 ◽  
Vol 9 (1) ◽  
pp. 015003 ◽  
Author(s):  
Cam Loc Luu ◽  
Thi Thuy Van Nguyen ◽  
Tri Nguyen ◽  
Phung Anh Nguyen ◽  
Tien Cuong Hoang ◽  
...  

2019 ◽  
Vol 9 (5) ◽  
pp. 4199-4204 ◽  
Author(s):  
Oeindrila Mukhopadhyay ◽  
Soumita Dhole ◽  
Badal Kumar Mandal ◽  
Fazlur-Rahman Nawaz Khan ◽  
Yong-Chien Ling

Nanomaterials with many improved properties have been used in versatile applications. Herein we have synthesized SnO2 NPs doped with transition metal ions such as Zn2+, Mn2+ and Co2+ through a facile and inexpensive hydrothermal approach. The synthesized nanomaterials were characterized by XRD, FT-IR, SEM and UV-Vis analysis. The optical properties of the NPs were characterized by using UV–vis and photoluminescence spectroscopy (PLS). Their photocatalytic performances were investigated by degrading methylene blue (MB) dye with UV irradiation. Transition metal doping to SnO2 NPs improved the photocatalytic activity to degradation of methylene blue dye due to tuning of band gap energy i.e. lowering of band gap energy compared to undoped SnO2 NPs. The results suggest that the synthesized NPs could be used efficiently for remediation/degradation of environmentally hazardous dyes from waste water or environmental cleanup.


2020 ◽  
Vol 20 (7) ◽  
pp. 4368-4372
Author(s):  
Hyunji Shin ◽  
Jaehoon Park ◽  
Sungkeun Baang ◽  
Jong Sun Choi

We investigate the electrical characteristics of solution-processed poly(3-hexylthiophene-2,5-diyl) (P3HT) thin-film transistors (TFTs) under monochromatic illumination conditions at different wavelengths of 700, 655, 515, and 315 nm. The TFT characteristics measured under light illumination at the wavelengths of 700 and 655 nm were comparable to those measured in the dark state. In addition, light illumination at a wavelength of 515 nm, of which photon energy (~2.4 eV) is higher than the band gap energy of P3HT (~1.7 eV), had a little effect on the electrical characteristics of P3HT TFTs. On the other hand, the TFT performance was notably changed by light illumination at a wavelength of 315 nm. These results indicate that the photon energy, which cause the characteristic degradation in the solution-processed P3HT TFTs, is much higher than the band gap energy of P3HT. Consequently, the illumination-induced variation in the TFT performance can be understood through a broad distribution of energetic states in the solution-processed P3HT semiconductor.


2020 ◽  
Vol 500 ◽  
pp. 144048 ◽  
Author(s):  
Zhilei Sun ◽  
V.F. Pichugin ◽  
K.E. Evdokimov ◽  
M.E. Konishchev ◽  
M.S. Syrtanov ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document