Band-Gap Energy Dependence of Emission Spectra in Rare Earth-Doped Zn(1-x)CdxS Thin Film Electroluminescent Devices

1992 ◽  
Vol 31 (Part 1, No. 2A) ◽  
pp. 295-300 ◽  
Author(s):  
Noboru Miura ◽  
Takashi Sasaki ◽  
Hironaga Matsumoto ◽  
Ryotaro Nakano
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Band Gap ◽  
Energy Dependence ◽  
Emission Spectra ◽  
Band Gap Energy ◽  
Electroluminescent Devices ◽  
Gap Energy ◽  
Rare Earth Doped

The dependence of emission spectra of rare earth ion on the band-gap energy of MgxZn1−xO alloy

2003 ◽  
Vol 249 (1-2) ◽  
pp. 163-166 ◽  
Author(s):  
Dongxu Zhao ◽  
Yichun Liu ◽  
Dezhen Shen ◽  
Jiying Zhang ◽  
Youming Lu ◽  
...  
Keyword(s):  
Rare Earth ◽  
Band Gap ◽  
Emission Spectra ◽  
Band Gap Energy ◽  
Rare Earth Ion ◽  
Gap Energy

Fabrication and Photoelectrochemical Characterization of Fe, Co, Ni and Cu-Doped TiO2 Thin Films

2013 ◽  
Vol 764 ◽  
pp. 266-283 ◽  
Author(s):  
Ibram Ganesh ◽  
Rekha Dom ◽  
P.H. Borse ◽  
Ibram Annapoorna ◽  
G. Padmanabham ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Ions ◽  
Band Gap ◽  
Metal Ion ◽  
Band Gap Energy ◽  
Chemical Compositions ◽  
Gap Energy ◽  
Glass Substrates ◽  
Photoelectrochemical Characterization

Different amounts of Fe, Co, Ni and Cu-doped TiO2 thin films were prepared on fluorine doped tin oxide (FTO) coated soda-lime glass substrates by following a conventional sol-gel dip-coating technique followed by heat treatment at 550 and 600°C for 30 min. These thin films were characterized for photo-current, chronoamperometry and band-gap energy values. The chemical compositions of metals-doped TiO2 thin films on FTO glass substrates were confirmed by XPS spectroscopic study. The metal-ions doped TiO2 thin films had a thickness of <200 nm="" optical="" transparency="" of="">80%, band-gap energy of >3.6 eV, and a direct band-to-band energy transition. The photoelectrochemical (PEC) studies revealed that all the metal-ions doped TiO2 thin films exhibit n-type semi-conducting behavior with a quite stable chronoamperometry and photo-currents that increase with the increase of applied voltage but decrease with the dopant metal-ion concentration in the thin film. Furthermore, these thin films exhibited flat-band potentials amenable to water oxidation reaction in a PEC cell. The 0.5 wt.% Cu-doped TiO2 thin film electrode exhibited an highest incident photon-to-current conversion efficiency (IPCE) of about 21%.

Effect of ZnO on a Superhydrophilic Self-Cleaning Properties of TiO2/SiO2 Thin Film on Glass Slide Substrate

2015 ◽  
Vol 1131 ◽  
pp. 237-241 ◽  
Author(s):  
Akkarat Wongkaew ◽  
Chanida Soontornkallapaki ◽  
Naritsara Amhae ◽  
Wichet Lamai
Keyword(s):  
Thin Film ◽  
Contact Angle ◽  
Visible Light ◽  
Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Coating Method ◽  
Dip Coating Method

This work aims to study the effect of ZnO containing in TiO2/SiO2 film on the superhydrophilic property after exposed to different types of light. The metal solutions were prepared by sol-gel technique and the film was deposited on glass slides by dip coating method. The parameter studied was the amount of ZnO in the TiO2/SiO2 film. The contents of ZnO were 5-20% weight (increased by 5%). The amount of TiO2 was constant at 30% weight. The obtained films were analyzed for their roughness. The results indicated that film roughness changed according to the ZnO contents. With 5%ZnO in the thin film, the roughness was 0.726 nm while 20%ZnO obtained the roughness of 2.128 nm. UV-Vis spectrophotometer was used for measuring of transmittance of films. At wavelength of 550 nm, the transmittances of each film were greater than 90%. Band gap energy of each film was calculated from the transmittance data. It was found that the average band gap energy of the films was 2.47 eV. Then, the films contained various amount of ZnO were grouped into 2 sets. The first set was exposed to visible light while the other set was exposed to UV. The duration of exposure was 5 hr. Both sets of films after exposed to any light were kept in a black box controlled relative humidity of 85%. Each film was measured contact angle every day. It was found that the 30%TiO2/5%Zn/SiO2 film exposed to visible light showed the best superhydrophilic property. The contact angle was about 0-5° within 3 days. This may due to the reduction of band gap energy in the presence of ZnO in TiO2/SiO2 films to 2.41 eV and the roughness of the film.

A correlation for crystallite size of undoped ZnO thin film with the band gap energy – precursor molarity – substrate temperature

Optik ◽  
2014 ◽  
Vol 125 (3) ◽  
pp. 1303-1306 ◽  
Author(s):  
Said Benramache ◽  
Okba Belahssen ◽  
Ali Arif ◽  
Abderrazak Guettaf
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Band Gap ◽  
Crystallite Size ◽  
Band Gap Energy ◽  
Zno Thin Film ◽  
Gap Energy

scholarly journals Fabrication of Cu2ZnSnS4 Thin Films Based on Facile Nanocrystals-Printing Approach with Rapid Thermal Annealing (RTA) Process

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 130 ◽  
Author(s):  
Jin Chen ◽  
Fengchao Wang ◽  
Bobo Yang ◽  
Xiaogai Peng ◽  
Qinmiao Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Band Gap Energy ◽  
Czts Thin Film ◽  
Gap Energy ◽  
Thermal Solution ◽  
Absorbing Layer

In the current study, Cu2ZnSnS4 (CZTS) thin film was successfully fabricated by the facile nanocrystals (NCs)-printing approach combined with rapid thermal annealing (RTA) process. Firstly, the CZTS NCs were synthesized by a thermal solution method and the possible formation mechanism was analyzed briefly. Then the influences of RTA toleration temperature and duration time on the various properties of as-printed thin films were examined via XRD, Raman, FE-SEM, UV-vis-IR spectroscopy, EDS and XPS treatments in detail. As observed, the RTA factors of temperature and time had significant impacts on the structure and morphology of as-prepared thin films, while there were no obvious effects on the band gap energy in studied conditions. The results showed that the obtained thin film at optimal RTA conditions of (600 °C, 20 min) featured a kesterite structure in pure phase and an irregular morphology consisting of large grains. Moreover, the satisfactory composition of a Cu-poor, Zn-rich state and an ideal band gap energy of 1.4 eV suggests that as-fabricated CZTS thin film is a suitable light-absorbing layer candidate for the application in thin film solar cells.

scholarly journals Thin film nano-photocatalyts with low band gap energy for gas phase degradation of p -xylene: TiO 2 doped Cr, UiO66-NH 2 and LaBO 3 (B  =  Fe, Mn, and Co)

2017 ◽  
Vol 9 (1) ◽  
pp. 015003 ◽  
Author(s):  
Cam Loc Luu ◽  
Thi Thuy Van Nguyen ◽  
Tri Nguyen ◽  
Phung Anh Nguyen ◽  
Tien Cuong Hoang ◽  
...  
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Gas Phase ◽  
Band Gap Energy ◽  
Low Band Gap ◽  
Gap Energy

AC Thin Film Electroluminescent Devices with Rare Earth Doped ZnS

1991 ◽  
Vol 138 (5) ◽  
pp. 1512-1516 ◽  
Author(s):  
M. K. Jayaraj ◽  
C. P. G. Vallabhan
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Electroluminescent Devices ◽  
Rare Earth Doped

Illumination Effect on Electrical Characteristics of Poly(3-hexylthiophene-2,5-diyl) Thin-Film Transistors

2020 ◽  
Vol 20 (7) ◽  
pp. 4368-4372
Author(s):  
Hyunji Shin ◽  
Jaehoon Park ◽  
Sungkeun Baang ◽  
Jong Sun Choi
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Photon Energy ◽  
Thin Film Transistors ◽  
Band Gap Energy ◽  
Light Illumination ◽  
Electrical Characteristics ◽  
Solution Processed ◽  
Gap Energy ◽  
Monochromatic Illumination

We investigate the electrical characteristics of solution-processed poly(3-hexylthiophene-2,5-diyl) (P3HT) thin-film transistors (TFTs) under monochromatic illumination conditions at different wavelengths of 700, 655, 515, and 315 nm. The TFT characteristics measured under light illumination at the wavelengths of 700 and 655 nm were comparable to those measured in the dark state. In addition, light illumination at a wavelength of 515 nm, of which photon energy (~2.4 eV) is higher than the band gap energy of P3HT (~1.7 eV), had a little effect on the electrical characteristics of P3HT TFTs. On the other hand, the TFT performance was notably changed by light illumination at a wavelength of 315 nm. These results indicate that the photon energy, which cause the characteristic degradation in the solution-processed P3HT TFTs, is much higher than the band gap energy of P3HT. Consequently, the illumination-induced variation in the TFT performance can be understood through a broad distribution of energetic states in the solution-processed P3HT semiconductor.

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