Research on Trench Etching and Photolithography Process of SiC Trench MOSFET

In this paper, the development of trench etching process and photolithography process for 6-inch 4H-SiC trench-type power MOSFET devices is mainly studied. Among them, the etching process successfully solved the anisotropy of dry etching of SiC, the different etching rates of different crystal planes, the difficulty of controlling the angle of the trench sidewall, and the easy formation of micro-trenches at the corners, etc. Successfully realized trenches with etch depth greater than 1.2um and sidewall angle greater than 90° in SiC. Subsequently, the trench was filled with SiO2 to achieve no holes in the trench after filling, and then the photolithography process was studied. Photolithography process is resolved at the trench coating, exposing and developing the non-uniformity problem, achieve a full and uniform coating, self-aligned trench overlay and the overlay accuracy of less than 0.1um, and there is no residue of photoresist in the groove after development. This article uses scanning electron microscope (SEM) to measure the morphology of the trench after etching and photolithography to characterize the experimental results, and the results meet the process requirements. The successful development of this process will facilitate the research and development of deeper trench-type power MOSFET devices.