Effect of wet chemical treatment on the properties of GaAs FIB-modified surface

Abstract We present the results of studies of the effect of wet chemical treatment on the properties of a GaAs surface modified by a gallium focused ion beam. Our studies based on results of AFM, KpAFM and Raman spectroscopy measurements have shown that, during wet chemical treatment, the damaged areas disappear completely in the case of low accelerating voltages and small doses of ions. At the same time, large accelerating voltages lead to the formation of extended damaged regions, the complete removal of which requires a longer treatment or additional processing.

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Failure Modes, Reliability Analysis and Case Studies on the Integration of Copper and Low-K Technology

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0649 ◽

2004 ◽

Author(s):

Huixian Wu ◽

James Cargo ◽

Huixian Wu ◽

Marvin White

Keyword(s):

Failure Analysis ◽

Case Studies ◽

Cross Section ◽

Focused Ion Beam ◽

Failure Modes ◽

Ion Beam ◽

Copper Interconnects ◽

Wet Chemical ◽

Low K ◽

Section Analysis

Abstract The integration of copper interconnects and low-K dielectrics will present novel failure modes and reliability issues to failure analysts. This paper discusses failure modes related to Cu/low-K technology. Here, physical failure analysis (FA) techniques including deprocessing and cross-section analysis have been developed. The deprocessing techniques include wet chemical etching, reactive ion etching, chemical mechanical polishing and a combination of these techniques. Case studies on different failure modes related to Cu/low k technology are discussed: copper voiding, copper extrusion; electromigration stress failure; dielectric cracks; delamination-interface adhesion; and FA on circuit-under-pad. For the cross-section analysis of copper/low-K samples, focused ion beam techniques have been developed. Scanning electron microscopy, EDX, and TEM analytical analysis have been used for failure analysis for Cu/low-K technology. Various failure modes and reliability issues have also been addressed.

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The Characterisation of Diesel Internal Injector Deposits by Focused Ion-Beam Scanning Electron Microscopy (FIB-SEM), Transmission Electron Microscopy (TEM), Atomic Force Microscopy and Raman Spectroscopy.

10.4271/2015-01-1826 ◽

2015 ◽

Cited By ~ 2

Author(s):

J Barker ◽

Jacqueline Reid ◽

M Piggott ◽

Mike W. Fay ◽

A Davies ◽

...

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Transmission Electron Microscopy ◽

Raman Spectroscopy ◽

Focused Ion Beam ◽

Ion Beam ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron ◽

Scanning Electron

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Two-dimensional ordered growth of InAs nanowires assisted by randomly deposited silver nanoparticles on a topographically modified surface by a focused ion beam

Applied Surface Science ◽

10.1016/j.apsusc.2019.06.024 ◽

2019 ◽

Vol 493 ◽

pp. 271-278

Author(s):

R. Ribeiro-Andrade ◽

T.L. Vasconcelos ◽

R.M.S. Kawabata ◽

M.P. Pires ◽

P.L. Souza ◽

...

Keyword(s):

Silver Nanoparticles ◽

Focused Ion Beam ◽

Ion Beam ◽

Two Dimensional ◽

Inas Nanowires ◽

Modified Surface

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Localized High-Resolution Stress Measurements on MEMS Structures

ASME 2009 InterPACK Conference, Volume 1 ◽

10.1115/interpack2009-89106 ◽

2009 ◽

Author(s):

Dietmar Vogel ◽

Astrid Gollhardt ◽

Bernd Michel

Keyword(s):

Raman Spectroscopy ◽

High Resolution ◽

Spatial Resolution ◽

Focused Ion Beam ◽

Stress Measurement ◽

Ion Beam ◽

Stress Relief ◽

Stokes Line ◽

Stress Measurements ◽

Electron Backscattering

Three different methods of stress measurement with strong spatial resolution are presented. They base on stress relief techniques caused by focused ion beam milling, on altered electron backscattering by deformed lattices and on Stokes line shift measurements by Raman spectroscopy. The capability of these methods is demonstrated by their application to typical MEMS structures. A comparison between the methods is performed in order to outline potentials and limitations.

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Tip-enhanced Raman spectroscopy of graphite irradiated by focused ion beam

Optics Letters ◽

10.1364/ol.34.002246 ◽

2009 ◽

Vol 34 (15) ◽

pp. 2246 ◽

Cited By ~ 5

Author(s):

Tsu-Shin Chan ◽

Mykhaylo M. Dvoynenko ◽

Chih-Yi Liu ◽

Juen-Kai Wang ◽

Yuh-Lin Wang

Keyword(s):

Raman Spectroscopy ◽

Focused Ion Beam ◽

Ion Beam ◽

Tip Enhanced Raman Spectroscopy

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Creation of 3D Patterns in Si by Focused Ga-Ion Beam and Anisotropic Wet Chemical Etching

MRS Proceedings ◽

10.1557/proc-279-599 ◽

1992 ◽

Vol 279 ◽

Cited By ~ 5

Author(s):

Wei Chen ◽

P. Chen ◽

A. Madhukar ◽

R. Viswanathan ◽

J. So

Keyword(s):

Chemical Etching ◽

Focused Ion Beam ◽

Ion Beam ◽

Free Standing ◽

Scale Thickness ◽

Ion Beam Implantation ◽

Etch Stop ◽

Wet Chemical ◽

Etching Behavior ◽

Wet Chemical Etching

ABSTRACTWe report the realization of free standing 3D structures as tall as ∼ 7μm with nano-scale thickness in Si using the technique of Ga focused ion beam implantation and sputtering followed by wet chemical etching. Some of the previously investigated subjects such as anisotropie etching behavior of crystalline Si and etch stop effect of Ga+implanted Si etched in certain anisotropie chemical etchants have been further explored with the emphasis on exploiting them in realizing free standing structures. The design and fabrication considerations in achieving such free standing structures are discussed and some typical structures fabricated by this technique are shown.

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