scholarly journals Peculiarities of the memory state formation in thin Ge2Sb2Te5 films

2021 ◽  
Vol 2103 (1) ◽  
pp. 012087
Author(s):  
S A Fefelov ◽  
L P Kazakova ◽  
N A Bogoslovskiy ◽  
A O Yakubov ◽  
A B Bylev
Keyword(s):  
Thin Films ◽  
Current Pulse ◽  
State Formation ◽  
Memory State ◽  
Conducting Filament ◽  
Current Pulses ◽  
Current Voltage ◽  
Maximum Current ◽  
Current Voltage Characteristics

Abstract The current-voltage characteristics of Ge2Sb2Te5 thin films were measured by a sequence of triangular current pulses with an increasing maximum current. Each current pulse forms in the sample a conducting filament with an area proportional to the maximum current in the recording pulse.

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Test System ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Pole Figures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Drying Conditions

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

Photoconductivity of Nanocomposite MEH-PPV: TiO2 Thin Films

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Spin Coating ◽  
Glass Substrate ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Current Voltage ◽  
Current Voltage Characteristics

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.

scholarly journals I-V measurements of Ge-Se-Sn chalcogenide glassy alloys

2015 ◽  
Vol 9 (1) ◽  
pp. 61-66 ◽  
Author(s):  
Vandana Kumari ◽  
Anusaiya Kaswan ◽  
Dinesh Patidar ◽  
Narendra Saxena ◽  
Kananbala Sharma
Keyword(s):  
Elevated Temperatures ◽  
Low Voltage ◽  
Constant Load ◽  
Dc Conductivity ◽  
Voltage Range ◽  
Glassy Alloys ◽  
Current Voltage ◽  
Maximum Current ◽  
Current Voltage Characteristics ◽  
Minimum Resistance

Current-voltage characteristics and DC electrical conductivity were studied for Ge30-xSe70Snx (x = 8, 11, 14, 17 and 20) glassy thin pellets of diameter 12mm and thickness 1mm prepared under a constant load of 5 tons using a well-known melt quenching technique in bulk as a function of composition. The I-V characteristics were recorded at room temperature as well as elevated temperatures up to 300?C. The experimental data suggests that glass containing 20 at.% of Sn has the minimum resistance allowing maximum current through the sample as compared to other counterparts of the series. Therefore, DC conductivity is found to increase with increasing Sn concentration. Composition dependence of DC conductivity is discussed in terms of the bonding between Se and Sn. Plots between ln I and V1/2 provide linear relationship for both low and high voltage range. These results have been explained through the Pool-Frenkel mechanism. The I-V characteristics show ohmic behaviour in the low voltage range and this behaviour turns to non-ohmic from ohmic in the higher voltage range due to voltage induced temperature effects.

Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 114-117
Author(s):  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm , respectively.

Photosensitive Amorphous Si Thin Films Prepared by Magnetron Technology.

2002 ◽  
Vol 744 ◽  
Author(s):  
Galina Khlyap ◽  
Victor Brytan
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Continuous Mode ◽  
Applied Bias ◽  
Near Ir ◽  
Current Voltage ◽  
Exponential Character ◽  
Current Voltage Characteristics ◽  
Amorphous Si ◽  
Spectral Ranges

ABSTRACTElectric field – induced effects are studied in thin films of amorphous Si grown by magnetron sputtering performed in continuous and pulse modes. Current-voltage characteristics are measured under the room temperature in different spectral ranges. It is shown that the investigated dependencies are of exponential character in all range of applied bias. Good photosensitivity was revealed by the samples prepared in continuous mode in the near-IR and visible interval. The samples grown by the pulse magnetron technology were shown room-temperature photosensitivity in near-IR range after 2000C hydrogenation.

Optical and Electrical Properties of Some Organic Thin Films for Optoelectronic Applications

2011 ◽  
Vol 337 ◽  
pp. 426-429
Author(s):  
S.B. Chen ◽  
Zhi You Zhong
Keyword(s):  
Thin Films ◽  
Experimental Studies ◽  
Visible Region ◽  
Organic Thin Films ◽  
Optical Transmittance ◽  
Vacuum Sublimation ◽  
Semiconductor Thin Films ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effective Carrier

Organic semiconductor thin films of bis-(2-methyl-8-quinolinolato)-4-(phenyl-phenolato) -aluminium-(III) (BAlq), N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)benzidine (NPB), and tris-(8- hydroxyquinoline) aluminum (Alq) were prepared by the vacuum sublimation technique. The optical properties in the UV-visible region of the thin films were investigated by optical transmittance and absorbance spectra. The optical energy gaps were obtained from direct allowed transitions at room temperature by Tauc’s law. The Urbach energy and the slope of Urbach edge were estimated by the Urbach-edges method, respectively. Furthermore, the current-voltage characteristics of organic thin films were analyzed, and the different slopes in the lower and higher voltage regions were observed. From the experimental studies, the effective carrier mobility, free carrier density, and electrical conductivity were also evaluated respectively.

Oxygen induced hysteretic current-voltage characteristics of iron-phthalocyanine thin films

2008 ◽  
Vol 104 (7) ◽  
pp. 073717 ◽  
Author(s):  
Soumen Samanta ◽  
Ajay Singh ◽  
A. K. Debnath ◽  
D. K. Aswal ◽  
S. K. Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Iron Phthalocyanine ◽  
Current Voltage ◽  
Current Voltage Characteristics
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