scholarly journals Investigation of defects in structures based on BP/Si heterojunction

2021 ◽  
Vol 2103 (1) ◽  
pp. 012088
Author(s):  
A A Maksimova ◽  
A I Baranov ◽  
A V Uvarov ◽  
D A Kudryashov ◽  
A S Gudovskikh
Keyword(s):  
Activation Energy ◽  
Conduction Band ◽  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Admittance Spectroscopy ◽  
Capture Cross ◽  
Defect Level ◽  
Transient Spectroscopy

Abstract In this work the properties of the BP/Si heterojunction interface were investigated by capacitance methods, the deep levels transient spectroscopy method and admittance spectroscopy. Admittance spectroscopy did not detect any defects, but the deep level transient spectroscopy showed response with activation energy of 0.33 eV and capture cross-section σn=(1-10)·10-19 cm2 and defect concentration (NT) is in the order of 1013 cm-3. This defect level is a trap for electron with position of 0.33 eV below the conduction band in region near the BP/Si interface.

Effect of Sacrificial AlN (Aluminum Nitride) Layer on the Deep Surface States of 4H-SiC

2021 ◽  
Vol 21 (3) ◽  
pp. 1904-1908
Author(s):  
Woo-Young Son ◽  
Jeong Hyun Moon ◽  
Wook Bahng ◽  
Sang-Mo Koo
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Surface States ◽  
Nitride Layer ◽  
Double Negative ◽  
Capture Cross ◽  
Trap Energy ◽  
Transient Spectroscopy

We investigated the effect of a sacrificial AlN layer on the deep energy level states of 4H-SiC surface. The samples with and without AlN layer have been annealed at 1300 °C for 30 minutes duration using a tube furnace. After annealing the samples, the changes of the carbon vacancy (VC) related Z1/2 defect characteristics were analyzed by deep level transient spectroscopy. The trap energy associated with double negative acceptor (VC(2-/0)) appears at ˜0.7 eV and was reduced from ˜0.687 to ˜0.582 eV in the sacrificial AlN layer samples. In addition, the capture cross section was significantly improved from ˜2.1×10-14 to ˜3.8×10−16 cm−2 and the trap concentration was reduced by approximately 40 times.

DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes

2017 ◽  
Vol 897 ◽  
pp. 279-282 ◽  
Author(s):  
Hussein M. Ayedh ◽  
Maurizio Puzzanghera ◽  
Bengt Gunnar Svensson ◽  
Roberta Nipoti
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Electron Trap ◽  
Double Negative ◽  
Capture Cross ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
Post Implantation

A vertical 4H-SiC p-i-n diode with 2×1020cm-3 Al+ implanted emitter and 1950°C/5min post implantation annealing has been characterized by deep level transient spectroscopy (DLTS). Majority (electron) and minority (hole) carrier traps have been found. Electron traps with a homogeneous depth profile, are positioned at 0.16, 0.67 and 1.5 eV below the minimum edge of the conduction band, and have 3×10-15, 1.7×1014, and 1.8×10-14 cm2 capture cross section, respectively. A hole trap decreasing in intensity with decreasing pulse voltage occurs at 0.35 eV above the maximum edge of the valence band with 1×1013 cm2 apparent capture cross section. The highest density is observed for the refractory 0.67 eV electron trap that is due to the double negative acceptor states of the carbon vacancy.

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

2010 ◽  
Vol 645-648 ◽  
pp. 499-502 ◽  
Author(s):  
Alberto F. Basile ◽  
John Rozen ◽  
X.D. Chen ◽  
Sarit Dhar ◽  
John R. Williams ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Capture Cross ◽  
Temperature Dependent ◽  
Band Energy ◽  
Transient Spectroscopy ◽  
Semiconductor Traps

The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

Meyer-Neldel Rule in Deep-Level-Transient-Spectroscopy and its Ramifications

2003 ◽  
Vol 763 ◽  
Author(s):  
Richard S. Crandall
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capture Cross ◽  
Emission Data ◽  
The Cross ◽  
Transient Spectroscopy ◽  
Capture Cross Sections

AbstractThis paper presents data showing a Meyer-Neldel rule (MNR) in InGaAsN alloys. It is shown that without this knowledge, significant errors will be made using Deep-Level Transient-Spectroscopy (DLTS) emission data to determine capture cross sections. By correctly accounting for the MNR in analyzing the DLTS data the correct value of the cross section is obtained.

The Effect of Si Planar Doping on DX Centers in Al.20Ga.74As

1991 ◽  
Vol 240 ◽  
Author(s):  
G. S. Solomon ◽  
G. Roos ◽  
E. Muñoz-Merino ◽  
J. S. Harris
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Deep Level ◽  
Biaxial Stress ◽  
Capture Cross ◽  
Biaxial Stress State ◽  
Si Doped ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Planar Doping

ABSTRACTThe effect of planar Si doping on the DX center in AlGaAs is investigated using Capacitance-Voltage and Deep Level Transient Spectroscopy techniques. We observe an increase of approximately six orders of magnitude in the DX center capture cross section in Al.26Ga.74As with planar doped Si spikes of 2×1012cm−2 as compared to conventional homogeneous Si doped Al.26Ga.74As. We also observe a small increase in the DX activation energy which was initiated at a lower planar doping of 4×1011 cm−2 and remained constant for the higher planar doping case. We believe the DX center concentration is not changed by the planar doping levels studied here. A model is proposed to explain the increase in capture cross section based on a biaxial stress state in the planar doped AlGaAs region.

Deep Levels in As-Grown and Electron-Irradiated P-type 4H-SiC

2006 ◽  
Vol 911 ◽  
Author(s):  
Katsunori Danno ◽  
Tsunenobu Kimoto
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Arrhenius Plot ◽  
Deep Level ◽  
Deep Levels ◽  
Emission Time ◽  
Transient Spectroscopy ◽  
P Type ◽  
Thermal Stability Of

AbstractDeep levels in as-grown and electron-irradiated p-type 4H-SiC have been investigated by deep level transient spectroscopy (DLTS). Three hole traps, namely HK2, HK3, and HK4, could be detected in the temperature range from 350K to 700K. Activation energies of the hole traps were estimated to be 0.84 eV for HK2, 1.27 eV for HK3, and 1.44 eV for HK4 from the Arrhenius plot of emission-time constants assuming temperature-independent capture cross section. By double-correlated DLTS (DDLTS), they were revealed to be donor-like (+/0) traps. The concentrations of HK3 and HK4 centers were clearly increased by low-energy (116 keV) electron irradiation. Based on thermal stability of the HK3 and HK4 centers up to 1350°C and the dependence of HK4 concentration on the electron fluence, they may originate from a complex including defect(s) caused by carbon displacement.

DLTS study of 3C-SiC grown on Si using hexamethyldisilane

2000 ◽  
Vol 622 ◽  
Author(s):  
M. Kato ◽  
M. Ichimura ◽  
E. Arai ◽  
Y. Masuda ◽  
Y. Chen ◽  
...  
Keyword(s):  
Activation Energy ◽  
Deep Level Transient Spectroscopy ◽  
Defect Density ◽  
Deep Level ◽  
Energy Levels ◽  
Wide Energy Range ◽  
Defect Level ◽  
Wide Energy ◽  
Transient Spectroscopy ◽  
Relationship Of

ABSTRACTn-type 3C-SiC was heteroepitaxially grown on n-type Si(100) substrates using HMDS (hexamethyldisilane) and characterized by DLTS (deep level transient spectroscopy) measurements. In order to investigate relationship of defect density with epilayer thickness, epilayers with various thicknesses were grown. Relatively thin (<1.0μm thick) epilayers were found to contain defects with energy levels distributed in a wide energy range, while relatively thick (>2.2μm thick) epilayers contain a defect with an activation energy of 0.25eV. This defect level is slightly shallower than that in 3C-SiC grown by SiH4 and C3H8 (∼0.3eV).

Determination of the Electrical Capture Process of the EH6-Center in n-Type 4H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 377-380 ◽  
Author(s):  
Jonas Weber ◽  
Svetlana Beljakowa ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
Bernd Zippelius ◽  
...  
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Schottky Contacts ◽  
Capture Process ◽  
Thermally Activated ◽  
Different Temperatures ◽  
Transient Spectroscopy

Deep Level Transient Spectroscopy (DLTS) investigations at different temperatures and with various filling pulse lengths were performed on n-type 4H-SiC epitaxial layers using Iridium Schottky contacts to determine the electrical capture process of the EH6-center. The temperature dependence of the electrical capture cross section σ ~ T-2.0 suggests a cascade capture process, which is not thermally activated. Together with earlier work by Zippelius et al. [4] this proves the acceptor-type of the EH6-center.

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