DLTS study of 3C-SiC grown on Si using hexamethyldisilane

2000 ◽  
Vol 622 ◽  
Author(s):  
M. Kato ◽  
M. Ichimura ◽  
E. Arai ◽  
Y. Masuda ◽  
Y. Chen ◽  
...  
Keyword(s):  
Activation Energy ◽  
Deep Level Transient Spectroscopy ◽  
Defect Density ◽  
Deep Level ◽  
Energy Levels ◽  
Wide Energy Range ◽  
Defect Level ◽  
Wide Energy ◽  
Transient Spectroscopy ◽  
Relationship Of

ABSTRACTn-type 3C-SiC was heteroepitaxially grown on n-type Si(100) substrates using HMDS (hexamethyldisilane) and characterized by DLTS (deep level transient spectroscopy) measurements. In order to investigate relationship of defect density with epilayer thickness, epilayers with various thicknesses were grown. Relatively thin (<1.0μm thick) epilayers were found to contain defects with energy levels distributed in a wide energy range, while relatively thick (>2.2μm thick) epilayers contain a defect with an activation energy of 0.25eV. This defect level is slightly shallower than that in 3C-SiC grown by SiH4 and C3H8 (∼0.3eV).

scholarly journals Investigation of defects in structures based on BP/Si heterojunction

2021 ◽  
Vol 2103 (1) ◽  
pp. 012088
Author(s):  
A A Maksimova ◽  
A I Baranov ◽  
A V Uvarov ◽  
D A Kudryashov ◽  
A S Gudovskikh
Keyword(s):  
Activation Energy ◽  
Conduction Band ◽  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Admittance Spectroscopy ◽  
Capture Cross ◽  
Defect Level ◽  
Transient Spectroscopy

Abstract In this work the properties of the BP/Si heterojunction interface were investigated by capacitance methods, the deep levels transient spectroscopy method and admittance spectroscopy. Admittance spectroscopy did not detect any defects, but the deep level transient spectroscopy showed response with activation energy of 0.33 eV and capture cross-section σn=(1-10)·10-19 cm2 and defect concentration (NT) is in the order of 1013 cm-3. This defect level is a trap for electron with position of 0.33 eV below the conduction band in region near the BP/Si interface.

THERMAL CURRENTS FROM UNDOPED SEMI-INSULATING GaAs MONITORED BY CHARGE DEEP-LEVEL TRANSIENT SPECTROSCOPY

1995 ◽  
Vol 09 (23) ◽  
pp. 3099-3114
Author(s):  
I. THURZO ◽  
K. GMUCOVÁ ◽  
F. DUBECKÝ ◽  
J. DARMO
Keyword(s):  
Space Charge ◽  
Space Charge Region ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Energy Levels ◽  
Thermally Stimulated Currents ◽  
Metal Semiconductor Metal ◽  
Transient Spectroscopy ◽  
Electrical Bias

Metal-semiconductor-metal (MSM) devices prepared from crystalline undoped semi-insulating GaAs were investigated by charge deep-level transient spectroscopy (QDLTS), while exciting the devices by electrical bias pulses in dark. Unlike current concepts of the QDLTS response, thermally stimulated currents were integrated from devices with GaAs crystals thinned down to or below 200 µm and equipped with Au electrodes. Au-GaAs-Au structures on 230 µm thick crystals exhibited standard QDLTS response on either cooling or heating between 100 K and 250 K. It is concluded that a macroscopic space charge region of width ≈10−7 m is formed at the Au/GaAs interface, as the dominant energy levels became ionized. Obtained results on the peaks of the thermally stimulated charge were correlated with those of potentially identical peaks observed via optical admittance transient spectroscopy (OATS).

Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects ?

2012 ◽  
Vol 717-720 ◽  
pp. 251-254 ◽  
Author(s):  
Bernd Zippelius ◽  
Alexander Glas ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
Tsunenobu Kimoto ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Contacts ◽  
Double Peak ◽  
Carbon Vacancy ◽  
High Concentrations ◽  
Transient Spectroscopy ◽  
Dlts Spectra

Deep Level Transient Spectroscopy (DLTS) and Double-correlated DLTS (DDLTS) measurements have been conducted on Schottky contacts fabricated on n-type 4H-SiC epilayers using different contact metals in order to separate the EH6- and EH7-centers, which usually appear as a broad double peak in DLTS spectra. The activation energy of EH6(EC- ET(EH6) = 1.203 eV) turns out to be independent of the electric field. As a consequence, EH6is acceptor-like according to the missing Poole-Frenkel effect. Therefore, it can be excluded that the EH6-center and the prominent acceptor-like Z1/2-center belong to different charge states of the same microscopic defect as theoretically suggested. It is proposed that EH6is a complex containing a carbon vacancy and another component available at high concentrations. The activation energy of EH7(EC- ET(EH7) = 1.58 eV) has been evaluated indirectly by fitting the DLTS spectra of the EH6/7double peak taking the previously determined parameters of EH6into account.

Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

2015 ◽  
Vol 242 ◽  
pp. 163-168 ◽  
Author(s):  
Ilia L. Kolevatov ◽  
Frank Herklotz ◽  
Viktor Bobal ◽  
Bengt Gunnar Svensson ◽  
Edouard V. Monakhov
Keyword(s):  
Schottky Diode ◽  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Energy Levels ◽  
Depletion Region ◽  
Type Silicon ◽  
Oxygen Center ◽  
Hydrogen Vacancy ◽  
Transient Spectroscopy

The evolution of irradiation-induced and hydrogen-related defects in n-type silicon in the temperature range 0 – 300 °C has been studied by deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). Implantation of a box-like profile of hydrogen was performed into the depletion region of a Schottky diode to undertake the DLTS and MCTS measurements. Proportionality between the formation of two hydrogen-related deep states and a decrease of the vacancy-oxygen center concentration was found together with the appearance of new hydrogen-related energy levels.

Evidence for Metastabile State of DX Center in AxGa1-xAs

1992 ◽  
Vol 262 ◽  
Author(s):  
Subhasis Ghosh ◽  
Vikram Kumar
Keyword(s):  
Activation Energy ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Activation ◽  
Deep Level ◽  
Thermal Activation Energy ◽  
Dx Centers ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Silicon Doped ◽  
First Time

ABSTRACTPhoto-Deep Level Transient Spectroscopy with 1.38 eV light reveals a new level with thermal activation energy 0.2 eV of DX centers in silicon doped Alx Ga1-xAs (x = 0.26) for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of thermodynamically metastable state DX.

Electrically Active Deep Levels in ScN

2001 ◽  
Vol 699 ◽  
Author(s):  
Florentina Perjeru ◽  
Xuewen Bai ◽  
Martin E. Kordesch
Keyword(s):  
Activation Energy ◽  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Physical Vapor Deposition ◽  
Deep Level ◽  
Reactive Sputtering ◽  
Deep Levels ◽  
Si Substrates ◽  
Transient Spectroscopy

AbstractWe report the electronic characterization of n-ScN in ScN-Si heterojunctions using Deep Level Transient Spectroscopy of electrically active deep levels. ScN material was grown by plasma assisted physical vapor deposition and by reactive sputtering on commercial p+ Si substrates. Deep level transient spectroscopy of the junction grown by plasma assisted physical vapor deposition shows the presence of an electronic trap with activation energy EC-ET= 0.51 eV. The trap has a higher concentration (1.2–1.6 1013cm−3) closer to the ScN/Si interface. Junctions grown by sputtering also have an electronic trap, situated at about EC-ET= 0.90 eV.

Donor-like Deep Level Defects in GaN Characterized by Double-correlation Deep Level Transient Spectroscopy

2005 ◽  
Vol 892 ◽  
Author(s):  
Mo Ahoujja ◽  
M Hogsed ◽  
Y. K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Activation Energy ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Peak Intensity ◽  
Spectral Peaks ◽  
Deep Donor ◽  
Radiation Induced ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Capacitance Transient

AbstractSi doped GaN grown by molecular beam epitaxy on sapphire substrates were characterized by capacitance transient spectroscopy. Conventional deep level transient spectroscopy (DLTS) measurements displayed six deep level defects, labeled A1, A, B, C1, C, and D, with activation energy ranging from 0.20 to 0.82 eV below the conduction band. Based on the logarithmic dependence of the DLTS spectral peaks on the filling pulse width, it is deduced that the defects A, B, C, and D are concentrated in the vicinity of line dislocations. Double-correlation DLTS (DDLTS) measurements, on the other hand, showed that only defects A (0.82 eV) and D (0.22 eV) exhibited deep donor-like characteristics. Following a 1.0 MeV electron irradiation of the GaN sample, one radiation-induced peak, E, with activation energy less than 0.20 eV was observed in the DLTS spectrum. However, after annealing at 350 °C, this DLTS peak intensity was found to diminish significantly.

Investigation of Defect Concentration Distributions in Ion-Implanted and Annealed GaAs

1980 ◽  
Vol 2 ◽  
Author(s):  
K.L. Wang ◽  
G.P. Li ◽  
P.M. Asbeck ◽  
C.G. Kirkpatrick
Keyword(s):  
Ion Implantation ◽  
Space Charge Region ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Energy Levels ◽  
Reliable Data ◽  
Electron Trap ◽  
Bridgman Technique ◽  
Transient Spectroscopy ◽  
Anneal Temperature

ABSTRACTUncapped and Si3N4-capped annealing of GaAs grown with the horizontal Bridgman technique was investigated with deep-level transient spectroscopy. Electron trap concentration distributions were measured with a reduced noise DLTS system to ensure reliable data. Ion implantation using Se ions both prior to capping and through a Si3N4 cap was carried out. The evolution of defect energy levels and the changes in concentration distributions with anneal temperature were studied. It is concluded that the defects residing in the probed space-charge region can be annealed out with a Si3N4 cap at a temperature higher than 750 C.

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