scholarly journals Evolution of the surface structure the proton-irradiated tungsten during isochronal annealing in the temperature range 600-1000 °C

2022 ◽  
Vol 2155 (1) ◽  
pp. 012004
Author(s):  
T Aldabergenova ◽  
M Baigonov ◽  
L Dikova ◽  
S Kislitsin
Keyword(s):  
Surface Structure ◽  
High Purity ◽  
Annealing Temperature ◽  
Proton Irradiation ◽  
Subsequent Annealing ◽  
Isochronal Annealing ◽  
Structure Evolution ◽  
Research Results ◽  
Temperature Range

Abstract This paper presents the research results the surface structure evolution of high-purity tungsten after irradiation with 350 keV protons and subsequent annealing in the temperature range 600 – 1000 °C. Irradiation to a fluence of 5×1017 cm‒2 leads to blisters formation on the irradiated surface. Successive two-hour annealing results in the evolution of the distribution of blisters - the total number of blisters decreases while the fraction of larger blisters increases. At an annealing temperature of 1000C, the blisters dissolve. Do not observed the blisters disclosure and surface flaking both after proton irradiation and subsequent annealing in temperature range 600 – 1000 °C.

The Interactions of Carbon and Nitrogen in Liquid Silicon

2014 ◽  
Vol 33 (4) ◽  
pp. 363-368 ◽  
Author(s):  
Halvor Dalaker ◽  
Merete Tangstad
Keyword(s):  
Silicon Nitride ◽  
Carbon Source ◽  
Nitrogen Content ◽  
High Purity ◽  
Liquid Silicon ◽  
Interaction Parameters ◽  
Carbon And Nitrogen ◽  
Temperature Range ◽  
High Purity Silicon

AbstractThe interactions between carbon and nitrogen in liquid silicon have been studied experimentally. High purity silicon was melted in silicon nitride crucibles under an Ar atmosphere with a graphite slab inserted in the crucible prior to melting as a carbon source. The system was thus simultaneously equilibrated with Si3N4 and SiC. Samples were extracted in the temperature range 1695–1798 K and analyzed using Leco.It was observed that the simultaneous saturation of nitrogen and carbon caused a significant increase in the solubilities of both elements. The interaction parameters were derived as The solubility of carbon in liquid silicon as a function of temperature and nitrogen content was found to follow: And the solubility of nitrogen in liquid silicon found to follow:

scholarly journals Synthesis, microstructure, and properties of high purity Mo2TiAlC2 ceramics fabricated by spark plasma sintering

2020 ◽  
Vol 9 (6) ◽  
pp. 759-768
Author(s):  
Yunhui Niu ◽  
Shuai Fu ◽  
Kuibao Zhang ◽  
Bo Dai ◽  
Haibin Zhang ◽  
...  
Keyword(s):  
Grain Size ◽  
Flexural Strength ◽  
Spark Plasma Sintering ◽  
Layered Structure ◽  
High Purity ◽  
High Fracture Toughness ◽  
Temperature Range ◽  
Microstructure And Properties ◽  
Plasma Sintering ◽  
Spark Plasma

AbstractThe synthesis, microstructure, and properties of high purity dense bulk Mo2TiAlC2 ceramics were studied. High purity Mo2TiAlC2 powder was synthesized at 1873 K starting from Mo, Ti, Al, and graphite powders with a molar ratio of 2:1:1.25:2. The synthesis mechanism of Mo2TiAlC2 was explored by analyzing the compositions of samples sintered at different temperatures. It was found that the Mo2TiAlC2 phase was formed from the reaction among Mo3Al2C, Mo2C, TiC, and C. Dense Mo2TiAlC2 bulk sample was prepared by spark plasma sintering (SPS) at 1673 K under a pressure of 40 MPa. The relative density of the dense sample was 98.3%. The mean grain size was 3.5 μm in length and 1.5 μm in width. The typical layered structure could be clearly observed. The electrical conductivity of Mo2TiAlC2 ceramic measured at the temperature range of 2–300 K decreased from 0.95 × 106 to 0.77 × 106 Ω–1·m–1. Thermal conductivity measured at the temperature range of 300–1273 K decreased from 8.0 to 6.4 W·(m·K)–1. The thermal expansion coefficient (TEC) of Mo2TiAlC2 measured at the temperature of 350–1100 K was calculated as 9.0 × 10–6 K–1. Additionally, the layered structure and fine grain size benefited for excellent mechanical properties of low intrinsic Vickers hardness of 5.2 GPa, high flexural strength of 407.9 MPa, high fracture toughness of 6.5 MPa·m1/2, and high compressive strength of 1079 MPa. Even at the indentation load of 300 N, the residual flexural strength could hold 84% of the value of undamaged one, indicating remarkable damage tolerance. Furthermore, it was confirmed that Mo2TiAlC2 ceramic had a good oxidation resistance below 1200 K in the air.

Wet chemical treatments of high purity Ge crystals for γ-ray detectors: Surface structure, passivation capabilities and air stability

2015 ◽  
Vol 161 ◽  
pp. 116-122 ◽  
Author(s):  
S. Carturan ◽  
G. Maggioni ◽  
S.J. Rezvani ◽  
R. Gunnella ◽  
N. Pinto ◽  
...  
Keyword(s):  
Surface Structure ◽  
High Purity ◽  
Chemical Treatments ◽  
Wet Chemical ◽  
Γ Ray

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

Effect of Annealing Temperature on the Surface Structure and Properties of Porous TiNi

2021 ◽  
Vol 57 (12) ◽  
pp. 1242-1249
Author(s):  
K. M. Dubovikov ◽  
A. S. Garin ◽  
E. S. Marchenko ◽  
G. A. Baigonakova ◽  
A. A. Shishelova ◽  
...  
Keyword(s):  
Surface Structure ◽  
Annealing Temperature ◽  
Structure And Properties

The influence of different isochronal annealing temperature on helium ion irradiation damage of W-Nb composites

2020 ◽  
Vol 159 ◽  
pp. 111857
Author(s):  
Hong-Yu Chen ◽  
Yu-Fen Zhou ◽  
Meng-Yao Xu ◽  
Lai-Ma Luo ◽  
Qiu Xu ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Ion Irradiation ◽  
Isochronal Annealing ◽  
Irradiation Damage ◽  
Helium Ion

Dislocation Recovery in Casting Alloy by Positron Lifetime Technique

2008 ◽  
Vol 280-281 ◽  
pp. 113-119
Author(s):  
M.A. Abdel-Rahman ◽  
M.S. Abdallah ◽  
N.A. Kamel ◽  
Emad A. Badawi
Keyword(s):  
Annealing Temperature ◽  
Positron Lifetime ◽  
Activation Enthalpy ◽  
The Other ◽  
Isochronal Annealing ◽  
Casting Alloy ◽  
Perfect Lattice ◽  
Mean Lifetime ◽  
Recovery Behavior ◽  
Fast Cooling

Recovery behavior of 20% plastically deformation of casting AlSi11.35Mg0.23 in various stages of isochronal annealing has been investigated by positron Lifetime (LT). The experimental results show that the positron mean lifetime is a function of annealing temperature. Lifetime of the positron annihilating in perfect lattice is 187.3ps and in 20% deformed is 229.8 ps. There are two regions in the isochronal annealing, one of them relating to the point defect and the other to the dislocation. The activation enthalpy for the dislocation is calculated from the isothermal study in the dislocation region from (575-675) K by slow and fast cooling as 0.16±0.02 and 0.53±0.06 eV respectively.

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