scholarly journals Gas sensing properties of very thin TiO2films prepared by atomic layer deposition (ALD)

2014 ◽  
Vol 559 ◽  
pp. 012013 ◽  
Author(s):  
S Boyadjiev ◽  
V Georgieva ◽  
L Vergov ◽  
Zs Baji ◽  
F Gáber ◽  
...  
2003 ◽  
Vol 93 (1-3) ◽  
pp. 552-555 ◽  
Author(s):  
A. Rosental ◽  
A. Tarre ◽  
A. Gerst ◽  
J. Sundqvist ◽  
A. Hårsta ◽  
...  

Sensors ◽  
2018 ◽  
Vol 18 (3) ◽  
pp. 735 ◽  
Author(s):  
Rachel Wilson ◽  
Cristian Simion ◽  
Christopher Blackman ◽  
Claire Carmalt ◽  
Adelina Stanoiu ◽  
...  

2010 ◽  
Vol 21 (24) ◽  
pp. 245605 ◽  
Author(s):  
Won-Sik Kim ◽  
Byoung-Sun Lee ◽  
Dai-Hong Kim ◽  
Hong-Chan Kim ◽  
Woong-Ryeol Yu ◽  
...  

2011 ◽  
Vol 11 (05) ◽  
pp. 959-966 ◽  
Author(s):  
YI-TING LIN ◽  
YU-HONG YU ◽  
YU CHEN ◽  
GUO-JUN ZHANG ◽  
SHI-YANG ZHU ◽  
...  

Vertical silicon nanowire (SiNW) platforms are candidates for use in ultrasensitive biosensors, with surface-to-volume ratio higher than one-dimensional SiNW . In this paper, a vertical SiNW electrolyte–insulator–semiconductor (EIS) structure with an ALD-HfO2 sensing membrane is proposed for use in a hydrogen ion sensor. Hafnium dioxide is used as the sensing membrane, which was deposited on the surface of the vertical SiNW structure by atomic layer deposition. The sensing properties were examined using a HP4284A high-precision LCR analyzer. A linear relationship was found between the flatband voltage shift and the hydrogen ion concentration. Comparing with different diameters of SiNW , the sensitivity with diameter of 200 nm was slightly higher than 100 nm. A post-deposition rapid thermal annealing (RTA) was utilized to optimize the sensing properties, and the sensitivity was increased to 51.07 mV/pH.


2010 ◽  
Vol 13 (12) ◽  
pp. K93 ◽  
Author(s):  
Yu-Hung Lin ◽  
Yang-Chih Hsueh ◽  
Chih-Chieh Wang ◽  
Jyh-Ming Wu ◽  
Tsong-Pyng Perng ◽  
...  

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