The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO2 Films Deposited by Atomic Layer Deposition

Size effects and structural modifications in amorphous TiO2 films deposited by atomic layer deposition (ALD) were investigated. As with the previously investigated ALD-deposited Al2O3 system we found that the film’s...

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Effects of CF4Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO2Layer Grown by Atomic Layer Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dl06 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DL06 ◽

Cited By ~ 4

Author(s):

Chi-Hang Chin ◽

Tseng-Fu Lu ◽

Jer-Chyi Wang ◽

Jung-Hsiang Yang ◽

Cheng-En Lue ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Potentiometric Sensor ◽

Sensing Properties ◽

Layer Deposition ◽

Light Addressable Potentiometric Sensor

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Low temperature temporal and spatial atomic layer deposition of TiO2 films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4922588 ◽

2015 ◽

Vol 33 (4) ◽

pp. 041512 ◽

Cited By ~ 24

Author(s):

Morteza Aghaee ◽

Philipp S. Maydannik ◽

Petri Johansson ◽

Jurkka Kuusipalo ◽

Mariadriana Creatore ◽

...

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Tio2 Films ◽

Layer Deposition ◽

Temporal And Spatial

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SnO2nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance

Nanotechnology ◽

10.1088/0957-4484/21/24/245605 ◽

2010 ◽

Vol 21 (24) ◽

pp. 245605 ◽

Cited By ~ 75

Author(s):

Won-Sik Kim ◽

Byoung-Sun Lee ◽

Dai-Hong Kim ◽

Hong-Chan Kim ◽

Woong-Ryeol Yu ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Gas Sensing ◽

Atomic Layer ◽

Layer Deposition ◽

Sensing Performance

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Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

MRS Proceedings ◽

10.1557/opl.2011.711 ◽

2011 ◽

Vol 1315 ◽

Cited By ~ 4

Author(s):

Paul R. Chalker ◽

Paul A. Marshall ◽

Simon Romani ◽

Matthew J. Rosseinsky ◽

Simon Rushworth ◽

...

Keyword(s):

Zinc Oxide ◽

Atomic Layer Deposition ◽

Film Thickness ◽

Transparent Conducting Oxide ◽

Oxide Films ◽

Atomic Layer ◽

Contactless Measurement ◽

Zinc Oxide Films ◽

Transparent Conducting ◽

Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

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