Short and long term ionizing radiation effects on charge-coupled devices in radiation environment of high-intensity heavy ion accelerators

2012 ◽  
Vol 7 (11) ◽  
pp. C11002-C11002 ◽  
Author(s):  
A Belousov ◽  
E Mustafin ◽  
W Ensinger
2014 ◽  
Vol 200 (3-4) ◽  
pp. 240-252 ◽  
Author(s):  
Kahori Kinoshita ◽  
Hisako Ishimine ◽  
Kenshiro Shiraishi ◽  
Harunosuke Kato ◽  
Kentaro Doi ◽  
...  

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1531 ◽  
Author(s):  
Chang Cai ◽  
Shuai Gao ◽  
Peixiong Zhao ◽  
Jian Yu ◽  
Kai Zhao ◽  
...  

Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application of FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy ions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were initialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the Vivado implementation of the compiled hardware description language. No hard error was observed in both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) were ~3.5 nJ, and the SEU cross-sections were correlated positively to the laser’s energy. Multi-bit upsets were measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional interrupt phenomena were common, especially in the heavy-ion tests. The single event effect results for the 16 nm FinFET process were significant, and some radiation tolerance strategies were required in a radiation environment.


2021 ◽  
Vol 17 (1) ◽  
pp. 85-103
Author(s):  
Paul D. Loprinzi ◽  
Sierra Day ◽  
Rebecca Hendry ◽  
Sara Hoffman ◽  
Alexis Love ◽  
...  

The specific questions addressed from this research include: (1) Does high-intensity acute exercise improve memory?, (2) If so, do the mechanisms occur via encoding, consolidation, or retrieval? and (3) If acute exercise occurs in multiple phases of memory (e.g., before encoding and during consolidation), does this have an additive effect on memory? Three experimental, within-subject, counterbalanced studies were conducted among young adults. High-intensity exercise involved a 20-minutes bout of exercise at 75% of heart rate reserve. Memory was evaluated from a word-list task, including multiple evaluations out to 24-hours post-encoding. The timing of the exercise and memory assessments were carefully positioned to evaluate whether any improvements in memory were driven by mechanisms related to encoding, consolidation, and/or retrieval. We demonstrated that high-intensity acute exercise enhanced memory. This effect was robust (repeatable) and occurred through encoding, consolidation and retrieval-based mechanisms. Further, incorporating acute exercise into multiple phases of memory additively enhanced memory function.


1978 ◽  
Vol 25 (6) ◽  
pp. 1502-1507 ◽  
Author(s):  
Arthur R. Hart ◽  
John B. Smyth ◽  
Victor A. J. van Lint ◽  
Donald P. Snowden ◽  
Roland E. Leadon

1978 ◽  
Author(s):  
Arthur R. Hart ◽  
John B. Smyth ◽  
Raymond Jr. ◽  
van Lint James P. ◽  
Victor A. J.

Sign in / Sign up

Export Citation Format

Share Document