scholarly journals Fisher behaviour influences catch productivity and selectivity in West Hawaii's aquarium fishery

2011 ◽  
Vol 68 (5) ◽  
pp. 813-822 ◽  
Author(s):  
Todd C. Stevenson ◽  
Brian N. Tissot ◽  
Jan Dierking
Keyword(s):  
Job Satisfaction ◽  
Reef Fish ◽  
Ex Situ ◽  
Catch Per Unit Effort ◽  
Cross Sectional ◽  
Fish Stocks ◽  
Catch Rates ◽  
Fish Trade ◽  
Yellow Tang

Abstract Stevenson, T. C., Tissot, B. N., and Dierking, J. 2011. Fisher behaviour influences catch productivity and selectivity in West Hawaii's aquarium fishery. – ICES Journal of Marine Science, 68: 813–822. In 1999, marine protected areas (MPAs) were implemented along the west coast of the Big Island of Hawaii, closing ∼35% of the coastline to aquarium fishing. Catch per unit effort and total catch of the most commonly targeted fish, yellow tang (Zebrasoma flavescens), have increased since the implementation of the MPAs, yet its abundance has declined by 45% in areas open to aquarium fishing between 1999 and 2007. How effort allocation, harvesting efficiencies, and job satisfaction influence catch productivity and selectivity in West Hawaii's aquarium fishery are investigated, and how these dynamics explain the discrepancy between catch rates and relative abundance for yellow tang is discussed. Cross-sectional fisher questionnaires, semi-structured fisher interviews, and in situ and ex situ catch analyses were performed. The results indicate that fishers dive deeper when reef fish recruitment is perceived as weak, increase harvest efficiency with larger fishing teams, and intensively harvest “coral-friendly” reef fish to supply the global aquarium fish trade. Experienced fishers were less likely to exit the fishery, and job satisfaction was high despite declining fish stocks. These findings may help explain harvesting efficiencies and fleet investment, underscore the importance for evaluating fisher behaviours, and have potential management implications for other aquarium fisheries.

A New Method of Wafer Level Plan View TEM Sample Preparation by DualBeam

2008 ◽  
Author(s):  
Hyoung H. Kang ◽  
Michael A. Gribelyuk ◽  
Oliver D. Patterson ◽  
Steven B. Herschbein ◽  
Corey Senowitz
Keyword(s):  
Sample Preparation ◽  
Ex Situ ◽  
Wafer Level ◽  
Cross Sectional ◽  
Plan View ◽  
Manufacturing Line ◽  
Transmission Electron ◽  
Thin Lamella ◽  
Preparation Techniques

Abstract Cross-sectional style transmission electron microscopy (TEM) sample preparation techniques by DualBeam (SEM/FIB) systems are widely used in both laboratory and manufacturing lines with either in-situ or ex-situ lift out methods. By contrast, however, the plan view TEM sample has only been prepared in the laboratory environment, and only after breaking the wafer. This paper introduces a novel methodology for in-line, plan view TEM sample preparation at the 300mm wafer level that does not require breaking the wafer. It also presents the benefit of the technique on electrically short defects. The methodology of thin lamella TEM sample preparation for plan view work in two different tool configurations is also presented. The detailed procedure of thin lamella sample preparation is also described. In-line, full wafer plan view (S)TEM provides a quick turn around solution for defect analysis in the manufacturing line.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition From SiH4/He/H2

1991 ◽  
Vol 235 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

In Situ Analysis of magnetic and Structural Properties of Epitaxial and Polycrystalline Ni80Fe20 Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
I. Hashim ◽  
H.A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Magnetic Properties ◽  
Kerr Effect ◽  
High Energy ◽  
Epitaxial Films ◽  
Interface Roughness ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTWe have investigated structural and magnetic properties of epitaxial Ni80Fe20 films grown on relaxed epitaxial Cu/Si (001) films. The crystallographic texture of these films was analyzed in situ by reflection high energy electron diffraction (RHEED), and ex situ by x-ray diffraction and cross-sectional transmission electron Microscopy (XTEM). In particular, RHEED intensities were recorded during epitaxial growth, and intensity profiles across Bragg rods were used to calculate the surface lattice constant, and hence, find the critical epitaxial thickness for which Ni80Fe20 grows pseudomorphically on Cu (100). XTEM analysis indicated that the epitaxial films had atomically-abrupt interfaces which was not the case for polycrystalline Cu and Ni80Fe20 film interfaces. The Magnetic properties of these epitaxial films were Measured in situ using Magneto-optic Kerr effect magnetometry and were compared with those of polycrystalline films grown on SiO2/Si. Large Hc (∼ 35 Oe) was observed for epitaxial Ni80Fe20 films less than 3.0 nm thick whereas for increasing thickness, Hc decreased approximately monotonically to a few Oersteds. Correlations were made between magnetic properties of these epitaxial films, the strain in the film and the interface roughness obtained from XTEM analysis.

Anticipating adaptation: a mechanistic approach for linking policy and stock status to recreational angler behavior

2013 ◽  
Vol 70 (8) ◽  
pp. 1190-1208 ◽  
Author(s):  
Joshua K. Abbott ◽  
Eli P. Fenichel
Keyword(s):  
Mechanistic Model ◽  
Recreation Demand ◽  
Total Catch ◽  
Catch Per Unit Effort ◽  
Management Tools ◽  
Fish Stocks ◽  
Decision Context ◽  
Alternative Future ◽  
Catch Rates ◽  
Fishing Behavior

We use techniques from economic recreation demand modeling to develop a mechanistic model of individual recreational fishing behavior and estimate it using license-frame survey data. By consistently integrating individuals’ seasonal decisions of where, whether, and how much to fish, the model generates predictions of aggregate indicators such as angler-days and fishing mortality as phenomena arising from individual behavior. We use the model to simulate alternative future scenarios by altering policy variables or measures of fishing quality, such as catch rates. The mechanistic nature of the model incorporates anglers’ adaptive behavior to these stimuli, generating scenarios that are likely more robust to shifts in the decision context than many commonly used phenomenological models. We utilize the model to examine the sensitivity of total catch and catch per unit effort (CPUE) to changes in fish stocks, revealing substantial nonlinearities in this relationship. We also simulate total fishing trips, participation, CPUE, and total catch for a seasonal fishing permit versus a per-trip fee, finding dramatic differences across the two policies that call into question the wisdom of permit fees as management tools.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition from SiH4/He/H2

1991 ◽  
Vol 236 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

AbstractSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

Epitaxial Growth of Silicon on CoSi2 (001)/Si (001)

1991 ◽  
Vol 220 ◽  
Author(s):  
Q. F. Xiao ◽  
J. R. Jimenez ◽  
L. J. Schowalter ◽  
L. Luo ◽  
T. E. Mitchell ◽  
...  
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
Thin Layers ◽  
Ex Situ ◽  
High Crystalline Quality ◽  
Cross Sectional ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Reconstructed Surface

ABSTRACTEpitaxial Si layers have been grown under a variety of growth conditions on CoSi2 (001) by molecular beam epitaxy (MBE). The structural properties of the Si overgrowth were studied by in-situ Reflection High Energy Electron Diffraction (RHEED), as well as ex-situ MeV4He+ ion channeling and High Resolution Transmission Electron Microscopy (HRTEM). Strong influences of the CoSi2 surface reconstruction on the Si overgrowth have been observed. RHEED studies show islanding growth of Si on the CoSi2 (001) (3/√2 × √2)R45 reconstructed surface, but smooth growth of Si on the CoSi2 (001) {√2 × √2)R45 reconstructed surface, under the same growth conditions. The growth of Si on thin layers of CoSi2 (2nm-6nm) with (√2 × √2)R45 reconstructed surface at 460°C results in high crystalline quality for the Si top layer, as indicated by good channeling minimum yield (Xmin < 6%), but cross-sectional TEM shows that the CoSi2 layers are discontinuous. We also report preliminary results on Si grown on a 2 × 2 reconstructed CoSi2 (001) surface.

In situ and ex situ transmission electron microscopy investigation of Cu–Al–Cu–Ti reactive metallic multilayer coatings

2010 ◽  
Vol 25 (6) ◽  
pp. 1196-1203 ◽  
Author(s):  
M.A. Mat Yajid ◽  
H. Bagshaw ◽  
G. Möbus
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ex Situ ◽  
Alloy Formation ◽  
Cross Sectional ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Reactive Sample ◽  
In Situ Heating

Metallic multilayers of Cu/Al/Ti composition were studied by transmission electron microscopy (TEM) and plasmon energy-loss mapping as prototypes of nanoscale reactive multilayer systems with exothermic alloy formation in oxygen-free conditions. The selection and arrangement of alloy phases by the system during ex situ and in situ heating experiments were found to depend not only on temperature but strongly on the initial volume ratios of metals, and to a lesser degree on the dimensionality of the reactive sample. Here, a two-dimensional sample was represented by ex situ heating of the full multilayer structure, a one-dimensional sample refers to in situ heating of thin cross-sectional TEM specimens, while a zero-dimensional sample (or metallic dot-array) was obtained after cutting thin pillars using focused ion beams. Lamellar self-organized alternation between Heusler phase and Cu9Al4 was found.

scholarly journals Nanoscopic and in-situ cross-sectional observations of Li-based conversion coating formation using liquid-phase TEM

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
A. Kosari ◽  
F. Tichelaar ◽  
P. Visser ◽  
P. Taheri ◽  
H. Zandbergen ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Protective Coatings ◽  
Conversion Process ◽  
Ex Situ ◽  
Lithium Salts ◽  
Detailed Knowledge ◽  
Cross Sectional ◽  
Coating Formation ◽  
Phase Transmission

AbstractLithium salts have been proposed as promising environmentally friendly alternatives to carcinogenic hexavalent chromium-based inhibitors for the corrosion protection of aerospace aluminium alloys (AAs). Incorporated into organic coatings, lithium salts are released at damaged locations to establish a conversion layer in which distinct sublayers have different barrier characteristics. Thus, detailed knowledge on the sequence of formation events from the early stages of nucleation towards the final multi-layered arrangement is essential for developing and optimising lithium-leaching technology for protective coatings. Here, liquid-phase-transmission electron microscopy (LP-TEM) is employed to observe nanoscopic morphological evolutions in situ during the lithium-based conversion process of AA2024-T3. Thanks to dedicated preparation of delicate sandwiched TEM specimens allowing us to explore the events cross-sectionally, we provide real-time direct mechanistic information on the conversion process from the initiation to an advanced growth stage. In parallel, we perform supplementary ex situ SEM and TEM investigations to support and validate the LP-TEM findings. The unprecedented experimental approach developed and executed in this study provides an inspiring base for studying also other complicated surface conversion processes in situ and at the nanoscopic scale.

In-Situ Studies of the Formation Sequence of Silicides During Vacuum (10-7 TORR)Thermal Annealing of TI/Polysilicon Bilayers

1991 ◽  
Vol 237 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen ◽  
S. Lee
Keyword(s):  
Thermal Reaction ◽  
Ex Situ ◽  
Vacuum System ◽  
X Ray Diffraction ◽  
Ramp Rate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Film Forming

ABSTRACTThe formation of suicides during the thermal reaction of Ti/polysilicon bilayers has been investigated using both in-stu four point sheet resistance measurements and ex-situ measurements including X-ray diffraction, cross-sectional transmission electron microscopy and Auger electron spectroscopy. For a series of samples annealed at a ramp rate of 10°C/min the following sequence of changes in the bilayers occurred. At temperatures exceeding 350°C and prior to the silicidation oxygen from the vacuum system diffuses into the Ti film forming a solid solution of Ti(O) with O levels up to 20 %. An amorphous TixSiy layer is the first major suicide reaction observed at temperatures near 440°C. The first major crystalline phase is observed at 500°C and identified as C49 TiSi2. This phase was found to coexist at these temperatures with the partially consumed Ti(O) and the amorphous TixSiy layers. Further annealing above 700 °C results in the final structural transformation from C49 TiSi2 to C54 TiSi2.

Suppression of the Phase Transition and Agglomeration of TiSi2 by Addition of Zr Element

1998 ◽  
Vol 514 ◽  
Author(s):  
Sanghyun Yoon ◽  
Hyeongtag Jeon
Keyword(s):  
Phase Transition ◽  
High Temperatures ◽  
Lower Surface ◽  
Ex Situ ◽  
Vacuum Furnace ◽  
Ion Pump ◽  
Cross Sectional ◽  
Surface And Interface ◽  
Si Substrates

ABSTRACTThe formation of C49 TiSi2 phase at high temperatures was investigated by adding the Zr contents in Ti-silicide film. Stabilizing the C49 TiSi2 phase which exhibits lower surface and interface energies than those of the C54 TiSi2 phase at high temperatures was expected to suppress the problems of Tisilicide, such as the phase transition and the film agglomeration. The thin films of Ti and Zr were codeposited (40 nm) on Si substrates in the dual e-beam evaporation system equipped with an ion pump and its base pressure of ∼5 × 10−9 torr. The amounts of Zr contents (5 and 10 atomic %) added on Tisilicide were monitored by in-situ quartz crystal monitor. Immediately after the deposition, this film was annealed by ex-situ vacuum furnace at temperatures between 600 °C and 900 °C in 100 °C increments. The identification of the phase and the chemical composition were investigated by XRD and AES, respectively. The surface and interface morphologies were examined using cross-sectional TEM. The phase transition temperature of TiSi2 was raised with increasing Zr contents. The agglomeration of TiSi2 film was also suppressed by adding Zr element and much improved interface morphologies were observed.

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