Physical Properties inside Domain Walls

Domain Walls ◽  
2020 ◽  
pp. 1-22
Author(s):  
G. Catalan ◽  
N. Domingo
Keyword(s):  
Domain Wall ◽  
Physical Properties ◽  
Domain Walls ◽  
Mechanical Response ◽  
Bulk Material ◽  
Wall Properties ◽  
Transmission Electron ◽  
Basic Physics ◽  
Recent Developments ◽  
The Individual

This chapter explains that the field of domain wall (DW) nanoelectronics is predicated on the premise that the distinct physical properties of domain walls offer new conceptual possibilities for devices. It first deals with basic physics of domain wall properties, and in particular the cross-coupling that allows domain walls to display properties and order parameters different from those of the parent bulk material. The chapter then turns to scanning probe techniques for measuring some of these domain wall properties, and specifically atomic force microscopy (AFM). Together with transmission electron microscopy, AFM is one of the most important tools currently available to probe and manipulate the individual position and physical properties of domain walls. Finally, the chapter focuses on two recent developments that allow investigating hitherto overlooked properties of domain walls: their magnetotransport and their mechanical response.

The direct determination of magnetic domain wall profiles using a split detector STEM

1978 ◽  
Vol 36 (1) ◽  
pp. 466-467
Author(s):  
J.N. Chapman ◽  
P.E. Batson ◽  
E.M. Waddell ◽  
R.P. Ferrier
Keyword(s):  
Electron Microscope ◽  
Domain Wall ◽  
Transmission Electron Microscope ◽  
Domain Walls ◽  
Photographic Plate ◽  
Magnetic Domain ◽  
Direct Determination ◽  
Quantitative Information ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron

By far the most commonly used mode of Lorentz microscopy in the examination of ferromagnetic thin films is the Fresnel or defocus mode. Use of this mode in the conventional transmission electron microscope (CTEM) is straightforward and immediately reveals the existence of all domain walls present. However, if such quantitative information as the domain wall profile is required, the technique suffers from several disadvantages. These include the inability to directly observe fine image detail on the viewing screen because of the stringent illumination coherence requirements, the difficulty of accurately translating part of a photographic plate into quantitative electron intensity data, and, perhaps most severe, the difficulty of interpreting this data. One solution to the first-named problem is to use a CTEM equipped with a field emission gun (FEG) (Inoue, Harada and Yamamoto 1977) whilst a second is to use the equivalent mode of image formation in a scanning transmission electron microscope (STEM) (Chapman, Batson, Waddell, Ferrier and Craven 1977), a technique which largely overcomes the second-named problem as well.

scholarly journals Interconversion of multiferroic domains and domain walls

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
E. Hassanpour ◽  
M. C. Weber ◽  
Y. Zemp ◽  
L. Kuerten ◽  
A. Bortis ◽  
...  
Keyword(s):  
Domain Wall ◽  
Physical Properties ◽  
Domain Walls ◽  
Three Dimensional ◽  
Topological Defects ◽  
Long Range Order ◽  
Two Dimensional ◽  
Domain Structures ◽  
Topological Singularities ◽  
Ordered State

AbstractSystems with long-range order like ferromagnetism or ferroelectricity exhibit uniform, yet differently oriented three-dimensional regions called domains that are separated by two-dimensional topological defects termed domain walls. A change of the ordered state across a domain wall can lead to local non-bulk physical properties such as enhanced conductance or the promotion of unusual phases. Although highly desirable, controlled transfer of these properties between the bulk and the spatially confined walls is usually not possible. Here, we demonstrate this crossover by confining multiferroic Dy0.7Tb0.3FeO3 domains into multiferroic domain walls at an identified location within a non-multiferroic environment. This process is fully reversible; an applied magnetic or electric field controls the transformation. Aside from expanding the concept of multiferroic order, such interconversion can be key to addressing antiferromagnetic domain structures and topological singularities.

scholarly journals Unconventional magnetization textures and domain-wall pinning in Sm–Co magnets

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Leonardo Pierobon ◽  
András Kovács ◽  
Robin E. Schäublin ◽  
Stephan S. A. Gerstl ◽  
Jan Caron ◽  
...  
Keyword(s):  
Domain Wall ◽  
High Performance ◽  
Domain Walls ◽  
Atom Probe ◽  
Electron Holography ◽  
Micromagnetic Simulations ◽  
Transmission Electron ◽  
Domain Wall Pinning ◽  
Weak Points ◽  
Magnetic Hardness

AbstractSome of the best-performing high-temperature magnets are Sm–Co-based alloys with a microstructure that comprises an $$\hbox {Sm}_2\hbox {Co}_{17}$$ Sm 2 Co 17 matrix and magnetically hard $$\hbox {SmCo}_5$$ SmCo 5 cell walls. This generates a dense domain-wall-pinning network that endows the material with remarkable magnetic hardness. A precise understanding of the coupling between magnetism and microstructure is essential for enhancing the performance of Sm–Co magnets, but experiments and theory have not yet converged to a unified model. Here, transmission electron microscopy, atom probe tomography, and nanometer-resolution off-axis electron holography have been combined with micromagnetic simulations to reveal that the magnetization state in Sm–Co magnets results from curling instabilities and domain-wall pinning effects at the intersections of phases with different magnetic hardness. Additionally, this study has found that topologically non-trivial magnetic domains separated by a complex network of domain walls play a key role in the magnetic state by acting as nucleation sites for magnetization reversal. These findings reveal previously hidden aspects of magnetism in Sm–Co magnets and, by identifying weak points in the microstructure, provide guidelines for improving these high-performance magnetic materials.

scholarly journals Observation of domain wall bimerons in chiral magnets

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Tomoki Nagase ◽  
Yeong-Gi So ◽  
Hayata Yasui ◽  
Takafumi Ishida ◽  
Hiroyuki K. Yoshida ◽  
...  
Keyword(s):  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Domain Walls ◽  
Topological Defects ◽  
Dipolar Interaction ◽  
Micromagnetic Simulations ◽  
Localized State ◽  
Transmission Electron ◽  
Wide Range ◽  
Lorentz Transmission Electron Microscopy

AbstractTopological defects embedded in or combined with domain walls have been proposed in various systems, some of which are referred to as domain wall skyrmions or domain wall bimerons. However, the experimental observation of such topological defects remains an ongoing challenge. Here, using Lorentz transmission electron microscopy, we report the experimental discovery of domain wall bimerons in chiral magnet Co-Zn-Mn(110) thin films. By applying a magnetic field, multidomain structures develop, and simultaneously, chained or isolated bimerons arise as the localized state between the domains with the opposite in-plane components of net magnetization. The multidomain formation is attributed to magnetic anisotropy and dipolar interaction, and domain wall bimerons are stabilized by the Dzyaloshinskii-Moriya interaction. In addition, micromagnetic simulations show that domain wall bimerons appear for a wide range of conditions in chiral magnets with cubic magnetic anisotropy. Our results promote further study in various fields of physics.

Transmission electron microscopy of composite materials

1988 ◽  
Vol 46 ◽  
pp. 1012-1015
Author(s):  
K.P.D. Lagerlof
Keyword(s):  
Composite Materials ◽  
Physical Properties ◽  
Structural Defects ◽  
Structural Composites ◽  
Multiphase Materials ◽  
Structural Reinforcement ◽  
Transmission Electron ◽  
Reinforced Fiber ◽  
Particulate Reinforced Composites ◽  
Definition Of

Although most materials contain more than one phase, and thus are multiphase materials, the definition of composite materials is commonly used to describe those materials containing more than one phase deliberately added to obtain certain desired physical properties. Composite materials are often classified according to their application, i.e. structural composites and electronic composites, but may also be classified according to the type of compounds making up the composite, i.e. metal/ceramic, ceramic/ceramie and metal/semiconductor composites. For structural composites it is also common to refer to the type of structural reinforcement; whisker-reinforced, fiber-reinforced, or particulate reinforced composites [1-4].For all types of composite materials, it is of fundamental importance to understand the relationship between the microstructure and the observed physical properties, and it is therefore vital to properly characterize the microstructure. The interfaces separating the different phases comprising the composite are of particular interest to understand. In structural composites the interface is often the weakest part, where fracture will nucleate, and in electronic composites structural defects at or near the interface will affect the critical electronic properties.

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

High-resolution microscopy of twin boundaries in gold

1987 ◽  
Vol 45 ◽  
pp. 260-261
Author(s):  
William Krakow ◽  
David A. Smith
Keyword(s):  
High Resolution ◽  
Specimen Preparation ◽  
Gold Films ◽  
Boundary Area ◽  
Transmission Electron ◽  
Recent Developments ◽  
Tilt Boundaries ◽  
High Resolution Microscopy ◽  
Twist Boundaries

Recent developments in specimen preparation, imaging and image analysis together permit the experimental determination of the atomic structure of certain, simple grain boundaries in metals such as gold. Single crystal, ∼125Å thick, (110) oriented gold films are vapor deposited onto ∼3000Å of epitaxial silver on (110) oriented cut and polished rock salt substrates. Bicrystal gold films are then made by first removing the silver coated substrate and placing in contact two suitably misoriented pieces of the gold film on a gold grid. Controlled heating in a hot stage first produces twist boundaries which then migrate, so reducing the grain boundary area, to give mixed boundaries and finally tilt boundaries perpendicular to the foil. These specimens are well suited to investigation by high resolution transmission electron microscopy.

Recent developments in automated Transmission Electron MI

1989 ◽  
Vol 47 ◽  
pp. 46-47
Author(s):  
W.J. de Ruijter ◽  
P. Rez ◽  
David J. Smith
Keyword(s):  
Image Analysis ◽  
Computer Image ◽  
Lens Design ◽  
Computer Image Analysis ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Recent Developments ◽  
On Line ◽  
Routine Procedures ◽  
Near Future

There is growing interest in the on-line use of computers in high-resolution electron n which should reduce the demands on highly skilled operators and thereby extend the r of the technique. An on-line computer could obviously perform routine procedures hand, or else facilitate automation of various restoration, reconstruction and enhan These techniques are slow and cumbersome at present because of the need for cai micrographs and off-line processing. In low resolution microscopy (most biologic; primary incentive for automation and computer image analysis is to create a instrument, with standard programmed procedures. In HREM (materials researc computer image analysis should lead to better utilization of the microscope. Instru (improved lens design and higher accelerating voltages) have improved the interpretab the level of atomic dimensions (approximately 1.6 Å) and instrumental resolutior should become feasible in the near future.

The need of electron microscopy in the study of domains and domain walls in ferroelectrics

1994 ◽  
Vol 52 ◽  
pp. 550-551
Author(s):  
Wenwu Cao
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
High Mobility ◽  
Continuum Theory ◽  
Polarization Vector ◽  
Ferroelectric Materials ◽  
Dielectric Constants ◽  
Nonlocal Coupling ◽  
Cubic Symmetry ◽  
Gradient Energy

Domain structures play a key role in determining the physical properties of ferroelectric materials. The formation of these ferroelectric domains and domain walls are determined by the intrinsic nonlinearity and the nonlocal coupling of the polarization. Analogous to soliton excitations, domain walls can have high mobility when the domain wall energy is high. The domain wall can be describes by a continuum theory owning to the long range nature of the dipole-dipole interactions in ferroelectrics. The simplest form for the Landau energy is the so called ϕ model which can be used to describe a second order phase transition from a cubic prototype,where Pi (i =1, 2, 3) are the components of polarization vector, α's are the linear and nonlinear dielectric constants. In order to take into account the nonlocal coupling, a gradient energy should be included, for cubic symmetry the gradient energy is given by,

Images and Applications of Ion Explosion Spike Pits

1990 ◽  
Vol 48 (1) ◽  
pp. 584-585
Author(s):  
P. Fraundorf ◽  
J. Tentschert
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Bulk Material ◽  
Coulomb Repulsion ◽  
The Body ◽  
Atomic Scale ◽  
Early Solar System ◽  
Transmission Electron ◽  
Nuclear Particle ◽  
Particle Tracks

Since the discovery of their etchability in the early 1960‘s, nuclear particle tracks in insulators have had a diverse and exciting history of application to problems ranging from the selective filtration of cancer cells from blood to the detection of 244Pu in the early solar system. Their usefulness stems from the fact that they are comprised of a very thin (e.g. 20-40Å) damage core which etches more rapidly than does the bulk material. In fact, because in many insulators tracks are subject to radiolysis damage (beam annealing) in the transmission electron microscope, the body of knowledge concerning etched tracks far outweighs that associated with latent (unetched) tracks in the transmission electron microscope.With the development of scanned probe microscopies with lateral resolutions on the near atomic scale, a closer look at the structure of unetched nuclear particle tracks, particularly at their point of interface with solid surfaces, is now warranted and we think possible. The ion explosion spike model of track formation, described loosely, suggests that a burst of ionization along the path of a charged particle in an insulator creates an electrostatically unstable array of adjacent ions which eject one another by Coulomb repulsion from substitutional into interstitial sites. Regardless of the mechanism, the ejection process which acts to displace atoms along the track core seems likely to operate at track entry and exit surfaces, with the added feature of mass loss at those surfaces as well. In other words, we predict pits whose size is comparable to the track core width.

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