Multiple quantum well optical nonlinearities: bistability from increasing absorption and the self electro-optic device

1984 ◽  
Vol 313 (1525) ◽  
pp. 239-244 ◽  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Optical Switch ◽  
Resonant Cavity ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
New Class ◽  
Electro Optic ◽  
Semiconductor Electronics

This paper briefly reviews the nonlinear optical and electro-optical properties and applications of GaAs—AlGaAs multiple quantum wells, all of which are compatible with laser diodes or semiconductor electronics or both. They show large nonlinear absorption and refraction (associated with their strong room-temperature exciton resonances) applicable to all-optical devices. They also show large electroabsorptive effects, some of which are unique to the quantum wells at any temperature, which are so strong that optical modulators can be made with micrometre dimensions. A new class of optical bistability (due to increasing absorption) is also reviewed; combination of this with the electroabsorptive effects enables a new mirrorless optical switch called a Self Electro-optic Effect Device (SEED), which sets a new standard for optical switching energies, with energy densities reduced by a factor of six by comparison to even the best resonant cavity devices.

EFFECT OF SURFACE ROUGHNESS ON THE FABRICATION OF ELECTROWETTING DISPLAY CELLS AND ITS ELECTRO-OPTIC SWITCHING BEHAVIOR

2009 ◽  
Vol 16 (01) ◽  
pp. 23-28 ◽  
Author(s):  
PALANIVELU SURESHKUMAR ◽  
MIYOUNG KIM ◽  
EUN GYOUNG SONG ◽  
YOUNG JIN LIM ◽  
SEUNG HEE LEE
Keyword(s):  
Optical Switching ◽  
Optical Switch ◽  
Hydrophobic Surface ◽  
Switching Behavior ◽  
Surface Roughening ◽  
New Class ◽  
Low Surface Energy ◽  
Electro Optic ◽  
Kinetics Of ◽  
Effect Of Surface

Electrowetting is a new class of reflective display based on electric field controlled movement of oil/water interface across a hydrophobic layer. The focus of this paper is to fabricate electrowetting cells on a rough hydrophobic surface and to study its effect on kinetics of electrowetting. The surface roughening found effective in two ways in the design and operation of the electrowetting device: (i) It enhances the coating of photoresist (PR) on the hydrophobic surface, which is normally difficult due to low surface energy of Teflon and (ii) the roughness changes the contact angle of the liquid (oil), which in turn changes the electro-optic switching behavior of the device. The kinetics of optical switch was checked by calculating theoretically the white area fraction (WA%), which is a measure of optical switching in electrowetting display by changing the roughness of the hydrophobic surface. The present study showed that the optical performance found to increase with the increase of roughness of the hydrophobic surface.

Multiple Quantum Well Heterostructures Showing Optical Nonlinearities at Low Intensity and Fast Recovery

1998 ◽  
Vol 07 (01) ◽  
pp. 37-45 ◽  
Author(s):  
L. Gastaldi ◽  
C. Rigo ◽  
D. Campi ◽  
L. Faustini ◽  
C. Coriasso ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Multiple Quantum Well ◽  
Optical Power ◽  
Guided Wave ◽  
Multiple Quantum ◽  
Photogenerated Carrier ◽  
Fast Recovery ◽  
All Optical ◽  
All Optical Switching

This paper focuses on photogenerated carrier nonlinearities in InGaAs/InAlAs quantum wells (QWs) that use low optical power, display a relatively fast recovery time (280 ps down to 35 ps), and excellent optical properties in terms of the sharpness of the absorption edge. A guided-wave, all-optical switching device is demonstrated as an application, at a wavelength which is of interest to telecommunication systems (1.55 μm) and requires low control energy (<0.3 pJ/pulse). A key issue here is that the controlled introduction of defects in the QW heterostructures allows the time response to be fastened significantly without being detrimental to the performance of the device in terms of on-off contrast and switching energy. The preparation procedure is compatible with metalorganic-based growth techniques widespread in optoelectronics at 1.55 μm.

GaAs–AlGaAs multiple-quantum-well lasers for monolithic integration with optical modulators

1991 ◽  
Vol 69 (3-4) ◽  
pp. 491-496 ◽  
Author(s):  
F. Chatenoud ◽  
K. M. Dzurko ◽  
M. Dion ◽  
D. Moss ◽  
R. Barber ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Cavity Length ◽  
Multiple Quantum Well ◽  
Monolithic Integration ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Single Quantum Well ◽  
Quantum Well Structures

Calculations of multiple-quantum-well laser threshold current show that a common minimum current value exists for each number of wells, at an appropriate cavity length. This optimum cavity length decreases rapidly with increasing number of wells, for instance from about 300 to 110 μm for one to three wells. Granded-index separate-confinement heterostructure (GRINSCH) lasers with 1–10 quantum wells, grown by molecular beam epitaxy, show consistently low threshold currents that agree well with theoretical predictions. Lasing is achieved at 160 A cm−2 and 4.6 mA for broad-area and ridge waveguide single-quantum-well devices, respectively. The field-dependent electroabsorption of these devices when operating as wave-guide modulators indicates good modulation properties for one and three quantum-well structures, with on:off ratios above 55 at lasing wavelength. The behavior becomes more complex with increasing number of wells. This systematic study of discrete multiple-quantum-well lasers and modulators demonstrates that GRINSCH structures with 1–3 wells are the most suitable for monolithic integration. Design rules for the laser cavity are also presented for numbers of wells ranging from 1 to 10.

scholarly journals Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

2001 ◽  
Vol 692 ◽  
Author(s):  
J. Zhao ◽  
X. D. Zhang ◽  
Z. C. Feng ◽  
J. C. Deng ◽  
P. Jin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Annealing Temperature ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Cladding Layer ◽  
Cap Layer ◽  
Free Vacancy

AbstractInGaAsP/InP multiple quantum wells have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blue shift was observed. Si3N4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal anne aling (RTA). The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.

New self‐electro‐optic effect device using two wavelengths in InGaAs/AlGaAs multiple quantum wells

1992 ◽  
Vol 61 (4) ◽  
pp. 376-378 ◽  
Author(s):  
Stephen Giugni ◽  
Kenji Kawashima ◽  
Kenzo Fujiwara ◽  
Naokatsu Sano
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Electro Optic

scholarly journals Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

1999 ◽  
Vol 4 (S1) ◽  
pp. 357-362
Author(s):  
C. Wetzel ◽  
T. Takeuchi ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
High Performance ◽  
Stark Effect ◽  
Electronic Band Structure ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Large Set ◽  
Electronic Band ◽  
Level Splitting

Identification of the electronic band structure in AlInGaN heterostructures is the key issue in high performance light emitter and switching devices. In device-typical GaInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across the GaN/GaInN/GaN piezoelectric heterointerface is identified and electric fields from 0.23 - 0.90 MV/cm are directly derived. In the bias voltage dependence a level splitting within the well is observed accompanied by the quantum confined Stark effect. We furthermore find direct correspondence of luminescence bands with reflectance features. This indicates the dominating role of piezoelectric fields in the bandstructure of such typical strained layers.

Optical properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths

2005 ◽  
Vol 892 ◽  
Author(s):  
Yong-Seok Choi ◽  
Cedrik Meier ◽  
Rajat Sharma ◽  
Kevin Hennessy ◽  
Elaine D. Haberer ◽  
...  
Keyword(s):  
Optical Properties ◽  
Photonic Crystal ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Light Extraction ◽  
Design Parameters ◽  
Multiple Quantum ◽  
Membrane Structures ◽  
High Q ◽  
Q Factors

AbstractWe have investigated the design parameters for high-Q photonic-crystal (PC) bandgap modes in the emission wavelengths of InGaN/GaN multiple quantum wells. We demonstrate experimental schemes to realize 2D triangular-lattice PC membrane structures, which is essential to obtain photonic bandgap (PBG) modes, and the optical properties of L7 membrane nanocavities that consist of seven missing holes in the Γ-K direction. L7 cavities show pronounced resonances with Q factors of 300 to 800 in the PBG as well as the enhancement of light extraction of the broad InGaN/GaN multiple-quantum-well emission by the 2D PBG.

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