scholarly journals High Bandwidth Power Electronics and Magnetic Nanoparticles for Multichannel Magnetogenetic Neurostimulation

2021 ◽  
Author(s):  
Boshuo Wang ◽  
Zhongxi Li ◽  
Charles E Sebesta ◽  
Daniel Torres Hinojosa ◽  
Qingbo Zhang ◽  
...  

Objective: We present a power electronic system and magnetic nanoparticles for multiplexed magnetogenetic neurostimulation with three channels spanning a wide frequency range and rapid channel switching capability. This enables selective heating of magnetic nanoparticles with different coercivity using various frequency-amplitude combinations of the magnetic field. Such multiplexed operation could provide the technical means for selective magnetogenetic neurostimulation beyond its spatial focality limits. Approach: The electronic system uses a hybrid of silicon metal-oxide-semiconductor and gallium-nitride field-effect transistors, which generate the required high-amplitude current up to 500 A in the sub-MHz range and the high-frequency current in the MHz range, respectively. Via three discrete resonance capacitor banks, the system generates an alternating magnetic field in the same liquid-cooled field coil at three distinct frequency channels spanning 50 kHz to 4 MHz. Fast switching between channels is achieved with high-voltage contactors connecting the coil to different capacitor banks. We characterized the system by the output channels' frequencies, field strength, and switching time, as well as the system's overall operation stability. Three types of iron oxide nanoparticles with different coercivity are developed to form three magnetothermal channels. Specific absorption rate and infrared thermal imaging measurements are performed with the nanoparticles to characterize their heating and demonstrate selective actuation for all three channels. Main results: The system achieved the desired target field strengths for three frequency channels (70 kA/m at 50 kHz, 10 kA/m at 500 kHz, and 1 kA/m at more than 2 MHz), with rapid switching speed between channels on the order of milliseconds. The system can operate continuously for at least two hours at 30% duty cycle with 125 Arms load in the coil, corresponding to a stimulation protocol of cycling the three channels at target strength with 3 s pulses and 7 s interpulse intervals. The nanoparticles were heated with selectivity between 2.3 and 9 times for their respective frequency channel. The system's intended use was thus validated with three distinct channels available for magnetothermal heating. Significance: We describe the first combination of a power electronic system and magnetic nanoparticles that achieves three stimulation channels. Selective actuation of nanoparticles is demonstrated for each channel using the same field coil, including a novel composition responding to magnetic fields in the MHz range. This approach could improve the speed and flexibility of frequency-multiplexed magnetogenetic neural stimulation.

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4731
Author(s):  
Wei-Ren Chen ◽  
Yao-Chuan Tsai ◽  
Po-Jen Shih ◽  
Cheng-Chih Hsu ◽  
Ching-Liang Dai

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.


Author(s):  
Erman Azwan Yahya ◽  
Ramani Kannan ◽  
Lini Lee

High-frequency semiconductor devices are key components for advanced power electronic system that require fast switching speed. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most famous electronic device that are used in much power electronic system. However, the application such as space borne, military and communication system needs Power MOSFET to withstand in radiation environments. This is very challenging for the engineer to develop a device that continuously operated without changing its electrical behavior due to radiation. Therefore, the main objective of this study is to investigate the Single Event Effect (SEE) sensitivity by using Heavy Ion Radiation on the commercial Power MOSFET. A simulation study using Sentaurus Synopsys TCAD software for process simulation and device simulation was done. The simulation results reveal that single heavy ion radiation has affected the device structure and fluctuate the I-V characteristic of commercial Power MOSFET.


Sensors ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 5795
Author(s):  
Kęstutis Ikamas ◽  
Dmytro B. But ◽  
Albert Cesiul ◽  
Cezary Kołaciński ◽  
Tautvydas Lisauskas ◽  
...  

The spread of practical terahertz (THz) systems dedicated to the telecommunication, pharmacy, civil security, or medical markets requires the use of mainstream semiconductor technologies, such as complementary metal-oxide-semiconductor (CMOS) lines. In this paper, we discuss the operation of a CMOS-based free space all-electronic system operating near 250 GHz, exhibiting signal-to-noise ratio (SNR) with 62 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines the state-of-the-art detector based on CMOS field-effect-transistors (FET) and a harmonic voltage-controlled oscillator (VCO). Three generations of the oscillator circuit are presented, and the performance characterization techniques and their improvement are explained in detail. The manuscript presents different emitter–detector pair operation modalities, including spectroscopy and imaging.


2015 ◽  
Vol 645-646 ◽  
pp. 610-615
Author(s):  
Tong Wu ◽  
Xiao Feng Zhao ◽  
Xiang Hong Yang ◽  
Dian Zhong Wen ◽  
Gang Li

An integrated pressure and magnetic field sensor based on piezoresistance effect is proposedin this paper. The integrated sensor is composed of a C-type silicon cup, ferromagnetic materialand Wheatstone bridge constructed by four metal oxide semiconductor field effect transistors(MOSFETs) channel resistances as piezoresistances. Based on the piezoresistance effect of channelresistances, the measurement to the external pressure P and magnetic field B can be achieved by thesensor. Through using complementary metal oxide semiconductor (CMOS) technology and microelectromechnicalsystem (MEMS) technology, the sensor chip was designed and fabricated on <100>orientation silicon substrates, locating the ferromagnetic material on its squared silicon membranecenter. The experimental results show that when supply voltage of the sensor is 2.0 V, the pressuresensitivity of sensor is 0.39 mV/kPa (B=0 T), and the magnetic field sensitivity of sensor is 1.48 mV/T(P=0 kPa).


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