Protonic conduction in oxide glasses: simple relations between electrical conductivity, activation energy, and the o-h bonding state

1988 ◽  
Vol 38 (14) ◽  
pp. 10166-10169 ◽  
Author(s):  
Yoshihiro Abe ◽  
Hideo Hosono ◽  
Yoshio Ohta ◽  
L. L. Hench
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Oxide Glasses ◽  
Conductivity Activation Energy ◽  
Protonic Conduction ◽  
Bonding State

scholarly journals Mechanical behavior and electrical conductivity of zinc-oxide ceramics

2020 ◽  
Vol 2020 (01) ◽  
pp. 46-54
Author(s):  
Y. M. Ostroverkh ◽  
◽  
I. O. Polishko ◽  
D. M. Brodnikovskyi ◽  
L. L. Kovalenko ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Zinc Oxide ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Type I ◽  
Type Ii ◽  
Conductivity Activation Energy ◽  
Zno Powder ◽  
Zno Ceramics

Ceramics sintered from zinc oxide powders, which differ in crystal structure, particle size and amount and type of impurities, have been studied for their mechanical behavior (strength and micromechanisms of biaxial bending at room temperature) and electrical conductivity depending on the purity of ZnO powder (99,9% byweight — type I and 99,5% byweight — type II) and its sintering temperature in the interval from 800 to 1250 ºC for 2 hours. It is found that the maximum values of strength and electrical conductivity are achieved in ZnO-ceramics sintered at temperatures of 1100—1200 and 1000—1150 ºC, respectively, and their micromechanism of fracture is the cleavage only. ZnO-powder developed (type II), being twice as large as the purchased (type I), 300—350 nm instead of 150—200 nm, provides close to 100% density at 1100 °C, the type II powder is sintering at almost 100 °C lower temperature than the purchased one. Type I ceramics provide biaxial strength at room temperature of 150—170 MPa; type II — 120—160 MPa. ZnO-ceramics from powders of both types provide maximum electrical conductivities of 8,54 10-3S/ cm and 1,6·10-3 S / cm at temperatures of 265 and 600 ºC, respectively. The activation energy of the electrical conductivity of ZnO-ceramics is dependent significantly on the properties of the powder and, accordingly, the structure of the ceramics and the test temperature. Type I ZnO ceramics have a lower conductivity activation energy than type II, 0,2—0,3 eVand 0,3—0,5 eV, respectively. The mechanism of electrical conductivity of ZnO-ceramics type I is practically unchanged in all the interval of testing temperatures, from the room one to 600 °C. In ZnO-ceramics of the type II, it changes at least twice. Keywords: zinc oxide, ZnO ceramics, sintering temperature, porosity, grain size, micromechanism of fracture, bending strength, electrical conductivity, activation energy.

scholarly journals Electrical Conductivity and Thermoelectrical Parameters of Argyrodite-Type Cu7 – xPS6 – xIx Mixed Crystals

2021 ◽  
Vol 66 (2) ◽  
pp. 159
Author(s):  
A.I. Pogodin ◽  
M.M. Luchynets ◽  
M.Y. Filep ◽  
A.A. Kohutych ◽  
T.O. Malakhovska ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Temperature Interval ◽  
Mixed Crystals ◽  
Frequency Range ◽  
Conductivity Activation Energy ◽  
Direct Crystallization ◽  
Thermoelectric Parameters ◽  
Frequency Temperature

Cu7−xPS6−xIx mixed crystals were grown by the direct crystallization from a melt. The electrical conductivity is measured in the frequency range from 10 Hz to 300 kHz and in the temperature interval 293–383 K. The frequency, temperature, and compositional dependences of the electrical conductivity for Cu7−xPS6−xIx mixed crystals are studied. The measurements of thermoelectric parameters of Cu7−xPS6−xIx mixed crystals are carried out in the temperature interval 293–383 K. The compositional behaviors of the electrical conductivity, activation energy, Seebeck coefficient, and power factor are investigated. The interrelation between the structural, electrical, and thermoelectrical properties is analyzed.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Electrical Conductivity of Magnesium Oxide/Molten Carbonate Eutectic Coexisting System

2019 ◽  
Vol 74 (9) ◽  
pp. 739-742
Author(s):  
Elena V. Nikolaeva ◽  
Andrey L. Bovet ◽  
Irina D. Zakiryanova
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Magnesium Oxide ◽  
Solid Phase ◽  
Specific Conductivity ◽  
Maxwell Model ◽  
Impedance Method ◽  
Molten Carbonate ◽  
Carbonate Ions ◽  
Alkali Carbonate

AbstractThe electrical conductivity of molten ternary alkali carbonate eutectic, coexisting with MgO particles, has been investigated. The conductivity was measured by the AC impedance method. The apparent activation energy ΔEa increased with the MgO content. This fact can be attributed to the effect of the solid phase. The specific conductivity of those systems could not be described using the Maxwell model over the solvation process of the carbonate ions on the particles of the magnesium oxide.

Protonic Conduction and O-H Bonding State in Phosphate Glasses

1990 ◽  
Vol 51 (1-4) ◽  
pp. 113-116 ◽  
Author(s):  
Yoshihiro Abe ◽  
Hideo Hosono ◽  
Takayuki Kamae ◽  
Kouichi Kawashima
Keyword(s):  
Phosphate Glasses ◽  
Protonic Conduction ◽  
Bonding State

scholarly journals SYNTHESIS AND ELECTRICAL CONDUCTIVITY OF SOLID SOLUTIONS OF THE SYSTEM RbF-PbF2-SnF2

2019 ◽  
Vol 85 (5) ◽  
pp. 60-68
Author(s):  
Yuliay Pogorenko ◽  
Anatoliy Omel’chuk ◽  
Roman Pshenichny ◽  
Anton Nagornyi
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Temperature Dependence ◽  
Solid Solutions ◽  
Basic Structure ◽  
Elementary Cell ◽  
Initial Structure ◽  
Fluoride Ions ◽  
Temperature Range ◽  
Order Of Magnitude

In the system RbF–PbF2–SnF2 are formed solid solutions of the heterovalent substitution RbxPb0,86‑xSn1,14F4-x (0 < x ≤ 0,2) with structure of β–PbSnF4. At x > 0,2 on the X-ray diffractograms, in addition to the basic structure, additional peaks are recorded that do not correspond to the reflexes of the individual fluorides and can indicate the formation of a mixture of solid solutions of different composition. For single-phase solid solutions, the calculated parameters of the crystal lattice are satisfactorily described by the Vegard rule. The introduction of ions of Rb+ into the initial structure leads to an increase in the parameter a of the elementary cell from 5.967 for x = 0 to 5.970 for x = 0.20. The replacement of a part of leads ions to rubium ions an increase in electrical conductivity compared with β–PbSnF4 and Pb0.86Sn1.14F4. Insignificant substitution (up to 3.0 mol%) of ions Pb2+ at Rb+ at T<500 K per order of magnitude reduces the conductivity of the samples obtained, while the nature of its temperature dependence is similar to the temperature dependence of the conductivity of the sample β-PbSnF4. By replacing 5 mol. % of ions with Pb2+ on Rb+, the fluoride ion conductivity at T> 450 K is higher than the conductivity of the initial sample Pb0,86Sn1,14F4 and at temperatures below 450 K by an order of magnitude smaller. With further increase in the content of RbF the electrical conductivity of the samples increases throughout the temperature range, reaching the maximum values at x≥0.15 (σ573 = 0.34–0.41 S/cm, Ea = 0.16 eV and σ373 = (5.34–8.16)•10-2 S/cm, Ea = 0.48–0.51 eV, respectively). In the general case, the replacement of a part of the ions of Pb2+ with Rb+ to an increase in the electrical conductivity of the samples throughout the temperature range. The activation energy of conductivity with an increase in the content of RbF in the low-temperature region in the general case increases, and at temperatures above 400 K is inversely proportional decreasing. The nature of the dependence of the activation energy on the concentration of the heterovalent substituent and its value indicate that the conductivity of the samples obtained increases with an increase in the vacancies of fluoride ions in the structure of the solid solutions.

scholarly journals The effect of additives metal on the D.C conductivity of epoxy resin

2011 ◽  
Vol 8 (1) ◽  
pp. 168-174
Author(s):  
Baghdad Science Journal
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Epoxy Resin ◽  
Filler Content ◽  
Experimental Results ◽  
Filler Concentration ◽  
Effect Of Additives

The present studies are focused on the modification of the properties of epoxy resin with different additives namely aluminum, copper by preparing of composites systems with percentage (20%, 40% and 50%) of the above additives. The experimental results show that the D.C of conductivity on wt% filler content at ( 293-413 ) K electrical conductivity of all above composites increased with temperature for composites with filler contact and find the excellent electrical conductivity of copper and lie between (2.6*10-10 - 2.1*10-10)?.cm . The activation energy of the electrical conductivity is determined and found to decrease with increasing the filler concentration.

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