Low-temperature occupation of a donor state resonant with the conduction band inAl0.35Ga0.65As

1993 ◽  
Vol 48 (24) ◽  
pp. 17835-17840 ◽  
Author(s):  
A. Baraldi ◽  
F. Colonna ◽  
P. Frigeri ◽  
C. Ghezzi ◽  
A. Parisini ◽  
...  
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Donor State

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

2020 ◽  
Vol 1004 ◽  
pp. 231-236
Author(s):  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Alexander A. Lebedev ◽  
Jana Toompuu ◽  
Natalja Sleptsuk
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Electron Irradiation ◽  
Proton Irradiation ◽  
Schottky Diodes ◽  
Differential Resistance ◽  
Charge Carriers ◽  
Low Temperature Annealing ◽  
Current Voltage ◽  
Comparative Results

The influence of low-temperature (up to 400°С) annealing on the current-voltage and capacitance–voltage characteristics of Schottky diodes irradiated with protons with an energy of 15 MeV compared with the results of annealing of structures after irradiation with electrons with an energy of 0.9 MeV has been studied. It was shown that in case of proton irradiation with a dose of 4E13 cm-2 and electron irradiation with a dose of 1E16 cm-2, only partial carrier compensation occurs and the differential resistance is completely determined by the number of carriers in the epitaxial layer. The irradiation method has almost no effect on the direct current dependence on the voltage in the exponential segment. The ideality coefficient remains almost unchanged within 1.03 ÷ 1.04. During annealing after proton irradiation, a large activation energy of the process is required. The temperature of the beginning of annealing process during proton irradiation shifts to a larger value, from 150 °C to 250 °C when compared with electron irradiation. It has been demonstrated that at low doses of proton irradiation, the low-temperature annealing leads to the return to the conduction band of up to 65% of the removed charge carriers. After electron irradiation, low-temperature annealing returns up to 90% of the removed charge carriers to the conduction band. This indicates that at room temperature both proton irradiation as well as electron irradiation introduce both stable and unstable defects but in different proportions.

Photoluminescence of ZnO:Eu3+ Nanoflowers

2008 ◽  
Vol 8 (3) ◽  
pp. 1307-1311 ◽  
Author(s):  
Peter A. Tanner ◽  
Lixin Yu
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Selective Excitation ◽  
Ftir Spectra ◽  
Photoluminescence Spectra ◽  
Defect States ◽  
Hydrothermal Route ◽  
Broadband Emission ◽  
The Eu

The synthesis of ZnO:Eu3+ nanoflowers by a low-temperature hydrothermal route is described. Characterization of the materials was performed by ESEM, XRD and FTIR spectra. The 355 nm excited photoluminescence spectra at 10 K do not indicate the presence of Eu2+ or the ZnO defect states which give rise to green or red broadband emission. Excitation into the ZnO conduction band at low temperature does not give emission from Eu3+. Selective excitation of the Eu3+ emission shows that Eu3+ ions occupy a variety of different sites, of which one of them is similar to Eu3+ in C-type Eu2O3.

Resonant localized donor state above the conduction band minimum in InN

2005 ◽  
Vol 86 (26) ◽  
pp. 262105 ◽  
Author(s):  
L. H. Dmowski ◽  
J. A. Plesiewicz ◽  
T. Suski ◽  
Hai Lu ◽  
W. Schaff ◽  
...  
Keyword(s):  
Conduction Band ◽  
Conduction Band Minimum ◽  
Donor State

The Visible and the Infrared Luminescence Bands as a Tool for Characterization of the Porous Silicon Bandstructure

1994 ◽  
Vol 358 ◽  
Author(s):  
V. Petrova-Koch ◽  
T. Muschik ◽  
G. Polisski ◽  
D. Kovalev
Keyword(s):  
Porous Silicon ◽  
Low Temperature ◽  
Valence Band ◽  
Conduction Band ◽  
Porous Si ◽  
Surface Degradation ◽  
Infrared Luminescence

ABSTRACTThe visible and the infrared photoluminescence bands in porous Si have been studied at low temperature for two series of samples: one in which the size of the crystallites has been varied and another in which the degree of surface degradation has been changed. It is shown that the relation of the two bands can be explored for characterization of the porous Si bandstructure. The size- and the surface dependence of the valence band and of the conduction band related states is discussed. A model is proposed for explanation.

Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements

2015 ◽  
Vol 821-823 ◽  
pp. 476-479
Author(s):  
Stefan Noll ◽  
Martin Rambach ◽  
Michael Grieb ◽  
Dick Scholten ◽  
Anton J. Bauer ◽  
...  
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Nitrogen Doping ◽  
Interface Traps ◽  
Channel Mobility ◽  
High Frequencies ◽  
Inversion Channel ◽  
Very High Frequencies ◽  
Post Implantation ◽  
Very High

Current power MOSFET devices on Silicon Carbide show a limited inversion channel mobility, which can be a result of the expected very high density of interface states near the conduction band . In the current work, the effect of the post implantation annealing temperature, the thermal oxidation and the nitrogen doping of the n-epi layer on the density of these interface traps is investigated using capacity-conductance measurements. Instead of the usage of very high frequencies as used in , in this investigation the measurements were performed in liquid nitrogen to decrease the recharging times of the interface traps.Due to the different processing the samples showed a wide spreading of the inversion channel mobility. The conductance measurements show a characteristic peak caused by the conduction band near interface traps especially for the low temperature measurements. But these traps could not be correlated to the mobility. Instead, a correlation to the nitrogen doping of the epi layer could be observed.

Hydrogenation of Gallium Nitride

1993 ◽  
Vol 325 ◽  
Author(s):  
M. S. Brandt ◽  
N. M. Johnson ◽  
R. J. Molnar ◽  
R. Singh ◽  
T. D. Moustakas
Keyword(s):  
Comparative Study ◽  
Conduction Band ◽  
Room Temperature ◽  
Hole Concentration ◽  
Conduction Band Edge ◽  
Order Of Magnitude ◽  
Si Doped ◽  
Donor State ◽  
P Type ◽  
Mg Doped

AbstractA comparative study of the effects of hydrogen in n-type (unintentionally and Si-doped) as well as p-type (Mg-doped) MBE-grown GaN is presented. Hydrogenation above 500°C reduces the hole concentration at room temperature in the p-type material by one order of magnitude. Three different microscopic effects of hydrogen are suggested: Passivation of deep defects and of Mg-acceptors due to formation of hydrogen-related complexes and the introduction of a hydrogenrelated donor state 100 meV below the conduction band edge.

scholarly journals Исследование методом спектроскопии фотоотражения слоев LT-GaAs, выращенных на подложках Si и GaAs

2018 ◽  
Vol 52 (7) ◽  
pp. 708
Author(s):  
Л.П. Авакянц ◽  
П.Ю. Боков ◽  
И.П. Казаков ◽  
М.А. Базалевский ◽  
П.М. Деев ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Spectral Line ◽  
Charge Carrier ◽  
Surface Charge ◽  
Conduction Band ◽  
Molecular Beam ◽  
Spin Orbit ◽  
Split Valence ◽  
Lt Gaas

AbstractThe mechanical strains and densities of surface charge states in GaAs layers grown by low-temperature (LT) molecular-beam epitaxy on Si(100) and GaAs(100) substrates are investigated by photoreflectance spectroscopy. Lines corresponding to the fundamental transition ( E _ g ) and the transition between the conduction band and spin-orbit-split valence subband ( E _ g + Δ_ SO ) in GaAs are observed in the photoreflectance spectra of Si/LT-GaAs structures at 1.37 and 1.82 eV, respectively. They are shifted to lower and higher energies, respectively, relative to the corresponding lines in GaAs/LT-GaAs structures. Comparing the spectra of the Si/LT-GaAs and GaAs/LT-GaAs structures, it is possible to estimate mechanical strains in LT-GaAs layers grown on Si (by analyzing the spectral-line shifts) and the density of charge-carrier states at the GaAs/Si heterointerface (by analyzing the period of Franz–Keldysh oscillations).

Low temperature conduction-band transport in diamond

2016 ◽  
Vol 109 (16) ◽  
pp. 162106 ◽  
Author(s):  
S. Majdi ◽  
M. Gabrysch ◽  
K. K. Kovi ◽  
N. Suntornwipat ◽  
I. Friel ◽  
...  
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Temperature Conduction
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