scholarly journals Phonon-assisted optical excitation in the narrow bandgap Mott insulatorSr3Ir2O7

2014 ◽  
Vol 89 (15) ◽  
Author(s):  
H. J. Park ◽  
C. H. Sohn ◽  
D. W. Jeong ◽  
G. Cao ◽  
K. W. Kim ◽  
...  
Keyword(s):  
Optical Excitation ◽  
Narrow Bandgap

scholarly journals Luminescence and carrier concentration in Sb-containing narrow bandgap quantum wells under optical excitation

2017 ◽  
Vol 917 ◽  
pp. 062027
Author(s):  
A V Selivanov ◽  
M Ya Vinnichenko ◽  
I S Makhov ◽  
D A Firsov ◽  
L E Vorobjev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Optical Excitation ◽  
Narrow Bandgap

scholarly journals Плазменное отражение в мультизеренном слое узкозонных полупроводников

2018 ◽  
Vol 44 (8) ◽  
pp. 102
Author(s):  
Н.Д. Жуков ◽  
М.И. Шишкин ◽  
А.Г. Роках
Keyword(s):  
Spectral Characteristics ◽  
Optical Excitation ◽  
Diamond Powder ◽  
Submicron Particles ◽  
Pbs Nanoparticles ◽  
Energy Quantization ◽  
Electron Transitions ◽  
Narrow Bandgap ◽  
Intrinsic Absorption Edge ◽  
Quantization Rules

AbstractQualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ∼7 μm) is characterized by an absorption band at 2.1–2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.

LOW ENERGY OPTICAL EXCITATION IN CeB6

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-737-C8-738
Author(s):  
Y. S. Kwon ◽  
S. Kimura ◽  
T. Nanba ◽  
S. Kunii ◽  
M. Ikezawa ◽  
...  
Keyword(s):  
Optical Excitation ◽  
Low Energy

Anti-Stokes Luminescence of Bulk and Thin-Film β-InSe under Infrared Optical Excitation

JETP Letters ◽  
2020 ◽  
Vol 112 (3) ◽  
pp. 145-149
Author(s):  
S. N. Nikolaev ◽  
M. A. Chernopitsskii ◽  
V. S. Bagaev ◽  
V. S. Krivobok
Keyword(s):  
Thin Film ◽  
Optical Excitation ◽  
Anti Stokes

Semiconductors

2018 ◽  
Author(s):  
L. Solymar ◽  
D. Walsh ◽  
R. R. A. Syms
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Vapour Deposition ◽  
Energy Levels ◽  
Chemical Vapour ◽  
Optical Excitation ◽  
Organic Chemical ◽  
Metal Organic ◽  
Mathematical Relations ◽  
Semiconductor Properties

Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.

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