scholarly journals Electronic properties and bonding in ZrHx thin films investigated by valence-band x-ray photoelectron spectroscopy

2017 ◽  
Vol 96 (19) ◽  
Author(s):  
Martin Magnuson ◽  
Susann Schmidt ◽  
Lars Hultman ◽  
Hans Högberg
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
X Ray

Hole Doping Through Indium Intercalation into Copper Phthalocyanine

2013 ◽  
Vol 802 ◽  
pp. 273-278 ◽  
Author(s):  
Anuchit Jaruvanawat ◽  
Pakorn Prajuabwan ◽  
Sunit Rojanasuwan ◽  
Annop Chanhom ◽  
Adirek Rangkasikorn ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Copper Phthalocyanine ◽  
High Vacuum ◽  
Hole Transport ◽  
Hole Doping ◽  
Silicon Substrates ◽  
X Ray ◽  
Evaporation Technique

A blend of molecular acceptor and molecular donor made of Copper Phthalocyanine (CuPc) and Indium in various ratios were evaporated in high vacuum on to intrinsic silicon substrates by using vacuum thermal co-evaporation technique. Electronic properties of In-doped CuPc thin films have been examined by X-ray photoelectron spectroscopy (XPS). The results obtained by XPS suggests that In-doped CuPc is a hole transport material.

Electronic properties of Co2MnSi thin films studied by hard x-ray photoelectron spectroscopy

2009 ◽  
Vol 42 (8) ◽  
pp. 084011 ◽  
Author(s):  
Siham Ouardi ◽  
Andrei Gloskovskii ◽  
Benjamin Balke ◽  
Catherine A Jenkins ◽  
Joachim Barth ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
X Ray

Effects of Pressure on the Vibrational, Structural and Electronic Properties of C60 Powder and Thin Films

2001 ◽  
Vol 695 ◽  
Author(s):  
S. C. Sharma ◽  
B. Ha ◽  
J. H. Rhee ◽  
Y. Li ◽  
D. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Structural Phase ◽  
X Ray ◽  
Significant Difference ◽  
Structural And Electronic Properties ◽  
Raman Modes ◽  
Valence Bands ◽  
La Doped

ABSTRACTWe present results from a study of the vibrational, structural, and electronic properties of C60 powder and thin films. Raman spectroscopy and diamond anvil cell have been used to study pressure dependence of the Raman active modes of C60 powder. The material undergoes structural phase transition between 9 and 15 GPa. Some of the Raman modes soften, while others harden with increasing pressure. Thin films of C60 and La-doped C60 have also been studied by using Raman scattering, x-ray diffraction, x-ray photoelectron spectroscopy and uv photoemission spectroscopy. Whereas the powder and La-doped C60 films exhibit fcc crystalline structure, the C60 film appears disordered. Further, we observe a significant difference in the electronic valence bands of the doped and undoped films.

Phase configuration, nanostructure, and mechanical behaviors in Ti-B-C-N thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2520-2527 ◽  
Author(s):  
Yonghao Lu ◽  
Junping Wang ◽  
Yaogen Shen ◽  
Dongbai Sun
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Solid Solution Hardening ◽  
Mechanical Behaviors ◽  
Additional Increase ◽  
N Content ◽  
X Ray ◽  
Nanocomposite Thin Films ◽  
The Cost ◽  
Nano Grains

A series of Ti-B-C-N thin films were deposited on Si (100) at 500 °C by incorporation of different amounts of N into Ti-B-C using reactive unbalanced dc magnetron sputtering in an Ar-N2 gas mixture. The effect of N content on phase configuration, nanostructure evolution, and mechanical behaviors was studied by x-ray diffraction, x-ray photoelectron spectroscopy, Raman spectroscopy, high-resolution transmission electron microscopy, and microindentation. It was found that the pure Ti-B-C was two-phased quasi-amorphous thin films comprising TiCx and TiB2. Incorporation of a small amount of N not only dissolved into TiCx but also promoted growth of TiCx nano-grains. As a result, nanocomposite thin films of nanocrystalline (nc-) TiCx(Ny) (x + y < 1) embedded into amorphous (a-) TiB2 were observed until nitrogen fully filled all carbon vacancy lattice (at that time x + y = 1). Additional increase of N content promoted formation of a-BN at the cost of TiB2, which produced nanocomposite thin films of nc-Ti(Cx,N1-x) embedded into a-(TiB2, BN). Formation of BN also decreased nanocrystalline size. Both microhardness and elastic modulus values were increased with an increase of N content and got their maximums at nanocomposite thin films consisting of nc-Ti(Cx,N1-x) and a-TiB2. Both values were decreased after formation of BN. Residual compressive stress value was successively decreased with an increase of N content. Enhancement of hardness was attributed to formation of nanocomposite structure and solid solution hardening.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

scholarly journals A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

2021 ◽  
Author(s):  
Tianlei Ma ◽  
Marek Nikiel ◽  
Andrew G. Thomas ◽  
Mohamed Missous ◽  
David J. Lewis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Mixed Valence ◽  
Chemical Vapour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Valence States ◽  
3 Omega ◽  
First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

scholarly journals X-ray Photoelectron Spectroscopy Analysis of Chitosan–Graphene Oxide-Based Composite Thin Films for Potential Optical Sensing Applications

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 478
Author(s):  
Wan Mohd Ebtisyam Mustaqim Mohd Daniyal ◽  
Yap Wing Fen ◽  
Silvan Saleviter ◽  
Narong Chanlek ◽  
Hideki Nakajima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Functional Group ◽  
Optical Sensing ◽  
Composite Thin Films ◽  
Cobalt Ions ◽  
X Ray ◽  
Sensing Applications

In this study, X-ray photoelectron spectroscopy (XPS) was used to study chitosan–graphene oxide (chitosan–GO) incorporated with 4-(2-pyridylazo)resorcinol (PAR) and cadmium sulfide quantum dot (CdS QD) composite thin films for the potential optical sensing of cobalt ions (Co2+). From the XPS results, it was confirmed that carbon, oxygen, and nitrogen elements existed on the PAR–chitosan–GO thin film, while for CdS QD–chitosan–GO, the existence of carbon, oxygen, cadmium, nitrogen, and sulfur were confirmed. Further deconvolution of each element using the Gaussian–Lorentzian curve fitting program revealed the sub-peak component of each element and hence the corresponding functional group was identified. Next, investigation using surface plasmon resonance (SPR) optical sensor proved that both chitosan–GO-based thin films were able to detect Co2+ as low as 0.01 ppm for both composite thin films, while the PAR had the higher binding affinity. The interaction of the Co2+ with the thin films was characterized again using XPS to confirm the functional group involved during the reaction. The XPS results proved that primary amino in the PAR–chitosan–GO thin film contributed more important role for the reaction with Co2+, as in agreement with the SPR results.

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