scholarly journals X-ray Photoelectron Spectroscopy Analysis of Chitosan–Graphene Oxide-Based Composite Thin Films for Potential Optical Sensing Applications

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 478
Author(s):  
Wan Mohd Ebtisyam Mustaqim Mohd Daniyal ◽  
Yap Wing Fen ◽  
Silvan Saleviter ◽  
Narong Chanlek ◽  
Hideki Nakajima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Functional Group ◽  
Optical Sensing ◽  
Composite Thin Films ◽  
Cobalt Ions ◽  
X Ray ◽  
Sensing Applications

In this study, X-ray photoelectron spectroscopy (XPS) was used to study chitosan–graphene oxide (chitosan–GO) incorporated with 4-(2-pyridylazo)resorcinol (PAR) and cadmium sulfide quantum dot (CdS QD) composite thin films for the potential optical sensing of cobalt ions (Co2+). From the XPS results, it was confirmed that carbon, oxygen, and nitrogen elements existed on the PAR–chitosan–GO thin film, while for CdS QD–chitosan–GO, the existence of carbon, oxygen, cadmium, nitrogen, and sulfur were confirmed. Further deconvolution of each element using the Gaussian–Lorentzian curve fitting program revealed the sub-peak component of each element and hence the corresponding functional group was identified. Next, investigation using surface plasmon resonance (SPR) optical sensor proved that both chitosan–GO-based thin films were able to detect Co2+ as low as 0.01 ppm for both composite thin films, while the PAR had the higher binding affinity. The interaction of the Co2+ with the thin films was characterized again using XPS to confirm the functional group involved during the reaction. The XPS results proved that primary amino in the PAR–chitosan–GO thin film contributed more important role for the reaction with Co2+, as in agreement with the SPR results.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

scholarly journals Yttrium Doped TiO2 Thin Film for Gas Sensing Application Prepared by Spin Coating Method

2020 ◽  
Author(s):  
M Abdul Kaiyum ◽  
Naim Ahmed ◽  
Arif Alam ◽  
M Shamimur Rahman
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Gas Sensing ◽  
Low Cost ◽  
Pure Titanium ◽  
X Ray ◽  
Sensing Applications ◽  
Coating Method ◽  
Set Up ◽  
Spin Coater

Abstract Yttrium (Y) doped and pure Titanium Di-oxide (TiO2) thin films were prepared by using spin coater. The coater was set up in laboratory with low cost investment. The films were calcined at 450 °C for 1 hour. For characterization, Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray Analysis (EDX), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Atomic Force Microscopy (AFM) were carried out. LCR Bridge - GW Instek LCR-821 was used for gas sensing applications. XPS showed that the change of electronic structure due to Y doping. SEM and AFM analysis were carried out to determine the surface morphology of the films. Yttrium (Y) decreased the crystallite size of the films and increased the surface roughness and porosity value, which was very good for many sensing applications. Gas sensing property of the deposited films were improved by the incorporation of yttrium impurities and the sensing property improved almost two times than pure TiO2 thin film. Different researches have been done their research related to this topic but no one researchers provide a precise explanation of their results, authors of this research have tried to do that. Moreover the films were prepared by a simple spin coater to reduce the production cost also.

scholarly journals Photocatalytic activity of graphene oxide–TiO 2 thin films sensitized by natural dyes extracted from Bactris guineensis

2019 ◽  
Vol 6 (3) ◽  
pp. 181824 ◽  
Author(s):  
William Vallejo ◽  
Angie Rueda ◽  
Carlos Díaz-Uribe ◽  
Carlos Grande ◽  
Patricia Quintana
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Graphene Oxide ◽  
Photocatalytic Degradation ◽  
Photoelectron Spectroscopy ◽  
Chemical Characterization ◽  
Sem Analysis ◽  
Visible Range ◽  
X Ray ◽  
Natural Sensitizer

This study synthesized and characterized composites of graphene oxide and TiO 2 (GO–TiO 2 ). GO–TiO 2 thin films were deposited using the doctor blade technique. Subsequently, the thin films were sensitized with a natural dye extracted from a Colombian source ( Bactris guineensis ). Thermogravimetric analysis, X-ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and diffuse reflectance measurements were used for physico-chemical characterization. All the samples were polycrystalline in nature, and the diffraction signals corresponded to the TiO 2 anatase crystalline phase. Raman spectroscopy and Fourier transform infrared spectroscopy (FTIR) verified the synthesis of composite thin films, and the SEM analysis confirmed the TiO 2 films morphological modification after the process of GO incorporation and sensitization. XPS results suggested a possibility of appearance of titanium (III) through the formation of oxygen vacancies (O v ). Furthermore, the optical results indicated that the presence of the natural sensitizer and GO improved the optical properties of TiO 2 in the visible range. Finally, the photocatalytic degradation of methylene blue was studied under visible irradiation in aqueous solution, and pseudo-first-order model was used to obtain kinetic information about photocatalytic degradation. These results indicated that the presence of GO has an important synergistic effect in conjunction with the natural sensitizer, reaching a photocatalytic yield of 33%.

Thermochromic VO2 Thin Film Prepared by Post Annealing Treatment of V2O5 Thin Film

2009 ◽  
Vol 79-82 ◽  
pp. 747-750 ◽  
Author(s):  
Dong Qing Liu ◽  
Wen Wei Zheng ◽  
Hai Feng Cheng ◽  
Hai Tao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Simple Method ◽  
X Ray ◽  
Post Annealing ◽  
Vo2 Thin Films

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.

scholarly journals Silica-Copper Oxide Composite Thin Films as Solar Selective Coatings Prepared by Dipping Sol Gel

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
E. Barrera-Calva ◽  
J. Méndez-Vivar ◽  
M. Ortega-López ◽  
L. Huerta-Arcos ◽  
J. Morales-Corona ◽  
...  
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Copper Oxide ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Silica Matrix ◽  
Composite Thin Films ◽  
X Ray ◽  
Molar Ratios ◽  
Steel Substrates

Silica-copper oxide (silica-CuO) composite thin films were prepared by a dipping sol-gel route using ethanolic solutions comprised TEOS and a copper-propionate complex. Sols with different TEOS/Cu-propionate (Si/Cu) molar ratios were prepared and applied on stainless steel substrates using dipping process. During the annealing process, copper-propionate complexes developed into particulate polycrystalline CuO dispersed in a partially crystallized silica matrix, as indicated by the X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses. The gel thermal analysis revealed that the prepared material might be stable up to400°C. The silica-CuO/stainless steel system was characterized as a selective absorber surface and its solar selectivity parameters, absorptance (α), and emittance (ε) were evaluated from UV-NIR reflectance data. The solar parameters of such a system were mostly affected by the thickness and phase composition of theSiO2-CuO film. Interestingly, the best solar parameters (α= 0.92 andε= 0.2) were associated to the thinnest films, which comprised a CuO-Cu2Omixture immersed in the silica matrix, as indicated by XPS.

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

Photolysis and Photocatalysis of 1,4 Dichlorobenzene Using Sputtered TiO2 Thin Films

2012 ◽  
Vol 734 ◽  
pp. 215-225 ◽  
Author(s):  
Sawsan A. Mahmoud ◽  
Emre Yassitepe ◽  
S. Ismat Shah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Phase ◽  
Wavelength Range ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
Direct Photolysis ◽  
X Ray ◽  
Degradation Rates ◽  
Visible Irradiation

The rate of 1,4-dichlorobenzene (1,4-DCB) degradation in the aqueous phase was investigated under direct photolysis or photocatalysis in the presence of TiO2 thin film prepared by reactive sputtering using a metal Ti target and a reaction sputtering atmosphere of argon and oxygen. The prepared thin films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). XPS confirmed the presence of completely oxidized TiO2 films whereas XRD showed that the films contained a mixture of rutile and anatase phases with rutile being approximately 30% of the total volume. Two lamps, both of the same power but different wavelength range were employed as irradiation sources. Photocatalysis showed faster removal of 1,4-DCB as compared to direct photolysis. The complete degradation was attained using the freshly prepared TiO2 sample. The intermediate produced during the photocatalysis was benzoquinone. Photolysis using visible irradiation was relatively slower and both benzoquinone and hydroquinone were formed as intermediates. Higher initial degradation rates were observed when the same film was re-used, most probably due to the effect of washing of the TiO2 thin films surface with methanol.

scholarly journals Improvement of Sensing Performance of Impedancemetric C2H2 Sensor Using SmFeO3 Thin-Films Prepared by a Polymer Precursor Method

Sensors ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 773 ◽  
Author(s):  
Tomohisa Tasaki ◽  
Satoko Takase ◽  
Youichi Shimizu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Precursor Solution ◽  
Particle Growth ◽  
Polymer Precursor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sensor Material ◽  
Perovskite Type

A sensitive an impedancemetric acetylene (C2H2) gas sensor device could be fabricated by using perovskite-type SmFeO3 thin-film as a sensor material. The uniform SmFeO3 thin-films were prepared by spin-coating and focusing on the effects of polymer precursor solutions. The prepared precursors and thin-films were characterized by means of thermal analysis,　Fourier-transform infrared spectroscopy, ultraviolet–visible spectroscopy, X-ray diffraction analysis, scanning electron microscopy and X-ray photoelectron spectroscopy . It was found that particle growth and increase in homogeneity of the prepared thin-film could be accelerated by the addition of acetyl acetone (AcAc) as a coordination agent in the polymer precursor solution. Moreover, the highly crystallized thin-film-based sensor showed good response properties and stabilities to a low C2H2 concentration between 0.5 and 2.0 ppm.

Characterization and optical properties of a novel conjugated polynitrile produced by plasma polymerization

e-Polymers ◽  
2008 ◽  
Vol 8 (1) ◽  
Author(s):  
Xiong-Yan Zhao
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Plasma Polymerization ◽  
Functional Group ◽  
Blue Emission ◽  
Visible Spectroscopy ◽  
Experimental Conditions ◽  
X Ray ◽  
Tin Oxides ◽  
Ft Ir

AbstractA novel conjugated polynitrile thin film, plasma-polymerized 3- quinolinecarbonitrile (PP3QCN) thin film was prepared by plasma polymerization of 3-quinolinecarbonitrile. Fourier transform infrared (FT-IR), Ultraviolet-visible spectroscopy (UV-Vis), and X-ray photoelectron spectroscopy (XPS) studies revealed that extensively conjugated C=N double bonds were formed in the deposited plasma film and the plasma polymerization of 3-quinolinecarbonitrile took place mainly through the opening of the π bonds of C ≡ N functional group under our experimental conditions. Plasma-polymerized 3-quinolinecarbonitrile thin film shows a blue emission with relatively high photoluminescence (PL) intensity at about 475 nm wavelength. The fabricated devices with PP3QCN as electroluminescent layer sandwiched between Indium Tin Oxides (ITO) and aluminium (Al) were also found to show a blue emission.

Uncertainty Evaluation in Measurement of Thickness of SiO2/Si Using X-Ray Photoelectron Spectroscopy

2014 ◽  
Vol 915-916 ◽  
pp. 833-837
Author(s):  
Jiang Wei Fan ◽  
Xiao Gang Han ◽  
Feng Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Measurement Method ◽  
Uncertainty Budget ◽  
Thickness Measurement ◽  
Quantitative Model ◽  
X Ray ◽  
Nominal Thickness ◽  
Measurement Of Thickness

Ultra-thin films of SiO2 (nominally 2, 4, 6, 8 and 10nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these thin films was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxide layers by applying an appropriate quantitative model. The uncertainty budget of that thickness measurement method is given. The effective attenuation lengths or the corresponding electron inelastic mean free paths are of the most importance in the contribution of the uncertainties. For the SiO2 ultra-thin film with the nominal thickness of 2nm, it could generate 20% of the uncertainty.

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