Phonon-Induced Resistance Oscillations in 2D Systems with a Very High Electron Mobility

Physical Review Letters ◽

10.1103/physrevlett.102.086808 ◽

2009 ◽

Vol 102 (8) ◽

Author(s):

A. T. Hatke ◽

M. A. Zudov ◽

L. N. Pfeiffer ◽

K. W. West

Keyword(s):

Induced Resistance ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

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Partially planar BP3with high electron mobility as a phosphorene analog

Journal of Materials Chemistry C ◽

10.1039/c7tc02346d ◽

2017 ◽

Vol 5 (43) ◽

pp. 11267-11274 ◽

Author(s):

Fazel Shojaei ◽

Hong Seok Kang

Keyword(s):

Electron Mobility ◽

High Electron ◽

Two Dimensional ◽

High Electron Mobility ◽

Stacking Pattern ◽

Very High ◽

Bilayer Formation

We propose a two-dimensional BP3crystal with a very high electron mobility of 4.6 × 104cm2V−1s−1. Bilayer formation, specifically stacking pattern AA, results in an even higher electron mobility of ∼3.7 × 105cm2V−1s−1, which is ∼2500 times larger than that of an α phosphorene bilayer.

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Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

Applied Physics Letters ◽

10.1063/1.2970991 ◽

2008 ◽

Vol 93 (8) ◽

pp. 082111 ◽

Author(s):

A. M. Dabiran ◽

A. M. Wowchak ◽

A. Osinsky ◽

J. Xie ◽

B. Hertog ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Channel Conductivity ◽

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Growth of very-high-mobility AlGaSb∕InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

Applied Physics Letters ◽

10.1063/1.2431567 ◽

2007 ◽

Vol 90 (2) ◽

pp. 023509 ◽

Author(s):

Y. C. Lin ◽

H. Yamaguchi ◽

E. Y. Chang ◽

Y. C. Hsieh ◽

M. Ueki ◽

...

Keyword(s):

Electron Mobility ◽

High Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Si Substrate ◽

Transistor Structure ◽

High Electron Mobility ◽

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Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator

Solid-State Electronics ◽

10.1016/s0038-1101(01)00158-7 ◽

2001 ◽

Vol 45 (9) ◽

pp. 1645-1652 ◽

Author(s):

Shreepad Karmalkar ◽

Umesh K. Mishra

Keyword(s):

High Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

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Enhanced electroluminescence and reduced efficiency roll-off in electrophosphorescent devices using a very high electron mobility material as emitter host and electron transporter

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/42/6/065103 ◽

2009 ◽

Vol 42 (6) ◽

pp. 065103 ◽

Author(s):

T L Li ◽

W L Li ◽

B Chu ◽

Z S Su ◽

Y R Chen ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

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Very High Selective Etching of GaAs/Al0.2Ga0.8As for Gate Recess Process to Pseudomorphic High Electron Mobility Transistors (PHEMT) Applications Using Citric Buffer Solution

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l800 ◽

2004 ◽

Vol 43 (No. 6B) ◽

pp. L800-L802 ◽

Author(s):

Chin-I Liao ◽

Po-Wen Sze ◽

Mau-Phon Houng ◽

Yeong-Her Wang

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Selective Etching ◽

High Electron ◽

Buffer Solution ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gate Recess ◽

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n-Type Organic Field-Effect Transistors with Very High Electron Mobility Based on Thiazole Oligomers with Trifluoromethylphenyl Groups

Journal of the American Chemical Society ◽

10.1021/ja055686f ◽

2005 ◽

Vol 127 (43) ◽

pp. 14996-14997 ◽

Author(s):

Shinji Ando ◽

Ryo Murakami ◽

Jun-ichi Nishida ◽

Hirokazu Tada ◽

Youji Inoue ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

High Electron ◽

Organic Field Effect Transistors ◽

High Electron Mobility ◽

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Novel Perylene Derivative having an Ether Group in the Side Chains for Solution-Processible n-Channel Transistors with Very High Electron Mobility

Applied Physics Express ◽

10.1143/apex.5.041602 ◽

2012 ◽

Vol 5 (4) ◽

pp. 041602 ◽

Author(s):

Hyeon-Gu Jeon ◽

Yoichiro Yokota ◽

Jinya Hattori ◽

Naomi Oguma ◽

Naoki Hirata ◽

...

Keyword(s):

Electron Mobility ◽

Side Chains ◽

High Electron ◽

Ether Group ◽

High Electron Mobility ◽

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AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High- $k$ Oxynitride $\hbox{TaO}_{x} \hbox{N}_{y}$ Gate Dielectric

IEEE Electron Device Letters ◽

10.1109/led.2012.2237499 ◽

2013 ◽

Vol 34 (3) ◽

pp. 375-377 ◽

Author(s):

Taku Sato ◽

Junich Okayasu ◽

Masahiko Takikawa ◽

Toshi-kazu Suzuki

Keyword(s):

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

High K ◽

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Very high electron mobility In0.8Ga0.2As heterostructure grown by molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/bf03030211 ◽

1991 ◽

Vol 20 (12) ◽

pp. 1081-1085 ◽

Author(s):

Munecazu Tacano ◽

Yoshinobu Sugiyama ◽

Yukihiro Takeuchi ◽

Yoshiki Ueno

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

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