scholarly journals Enhanced surface state protection and band gap in the topological insulator PbBi4Te4S3

2018 ◽  
Vol 2 (10) ◽  
Author(s):  
K. Sumida ◽  
T. Natsumeda ◽  
K. Miyamoto ◽  
I. V. Silkin ◽  
K. Kuroda ◽  
...  
Keyword(s):  
Band Gap ◽  
Topological Insulator ◽  
Surface State ◽  
Enhanced Surface ◽  
State Protection

scholarly journals Observation and control of the weak topological insulator state in ZrTe5

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Peng Zhang ◽  
Ryo Noguchi ◽  
Kenta Kuroda ◽  
Chun Lin ◽  
Kaishu Kawaguchi ◽  
...  
Keyword(s):  
Band Gap ◽  
Topological Insulator ◽  
Spin Current ◽  
Side Surface ◽  
Quantum Spin ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Dirac Semimetal ◽  
Topological States ◽  
The One ◽  
And Control

AbstractA quantum spin Hall (QSH) insulator hosts topological states at the one-dimensional (1D) edge, along which backscattering by nonmagnetic impurities is strictly prohibited. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces. The enhanced confinement could provide a route for dissipationless current and better advantages for applications relative to strong topological insulators (STIs). However, the topological side surface is usually not cleavable and is thus hard to observe. Here, we visualize the topological states of the WTI candidate ZrTe5 by spin and angle-resolved photoemission spectroscopy (ARPES): a quasi-1D band with spin-momentum locking was revealed on the side surface. We further demonstrate that the bulk band gap is controlled by external strain, realizing a more stable WTI state or an ideal Dirac semimetal (DS) state. The highly directional spin-current and the tunable band gap in ZrTe5 will provide an excellent platform for applications.

CHANGES INDUCED IN THE SURFACE ELECTRONIC STRUCTURE OF Be(0001) AFTER Si ADSORPTION

2002 ◽  
Vol 09 (02) ◽  
pp. 687-691
Author(s):  
L. I. JOHANSSON ◽  
C. VIROJANADARA ◽  
T. BALASUBRAMANIAN
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Surface State ◽  
Core Level ◽  
Clean Surface ◽  
Core Level Spectrum ◽  
Surface Band ◽  
Surface Electronic Structure

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

scholarly journals Dimensional Crossover and Topological Nature of the Thin Films of a Three-Dimensional Topological Insulator by Band Gap Engineering

Nano Letters ◽  
2019 ◽  
Vol 19 (7) ◽  
pp. 4627-4633 ◽  
Author(s):  
Zhenyu Wang ◽  
Tong Zhou ◽  
Tian Jiang ◽  
Hongyi Sun ◽  
Yunyi Zang ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Topological Insulator ◽  
Three Dimensional ◽  
Dimensional Crossover ◽  
Band Gap Engineering

scholarly journals Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3

2019 ◽  
Vol 100 (19) ◽  
Author(s):  
I. A. Shvets ◽  
I. I. Klimovskikh ◽  
Z. S. Aliev ◽  
M. B. Babanly ◽  
F. J. Zúñiga ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Topological Insulator ◽  
Wide Band ◽  
Wide Band Gap ◽  
Surface Electronic Structure

scholarly journals Termination switching of antiferromagnetic proximity effect in topological insulator

2020 ◽  
Vol 6 (33) ◽  
pp. eaaz8463
Author(s):  
Chao-Yao Yang ◽  
Lei Pan ◽  
Alexander J. Grutter ◽  
Haiying Wang ◽  
Xiaoyu Che ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Topological Insulator ◽  
Surface State ◽  
Proximity Effect ◽  
Surface States ◽  
Double Exchange ◽  
Exchange Interactions ◽  
Stacking Order ◽  
Bst Films ◽  
Magnetic Proximity Effect

This work reports the ferromagnetism of topological insulator, (Bi,Sb)2Te3 (BST), with a Curie temperature of approximately 120 K induced by magnetic proximity effect (MPE) of an antiferromagnetic CrSe. The MPE was shown to be highly dependent on the stacking order of the heterostructure, as well as the interface symmetry: Growing CrSe on top of BST results in induced ferromagnetism, while growing BST on CrSe yielded no evidence of an MPE. Cr-termination in the former case leads to double-exchange interactions between Cr3+ surface states and Cr2+ bulk states. This Cr3+-Cr2+ exchange stabilizes the ferromagnetic order localized at the interface and magnetically polarizes the BST Sb band. In contrast, Se-termination at the CrSe/BST interface yields no detectable MPE. These results directly confirm the MPE in BST films and provide critical insights into the sensitivity of the surface state.

Surface state dominated transport in topological insulator Bi2Te3 nanowires

2013 ◽  
Vol 103 (19) ◽  
pp. 193107 ◽  
Author(s):  
Bacel Hamdou ◽  
Johannes Gooth ◽  
August Dorn ◽  
Eckhard Pippel ◽  
Kornelius Nielsch
Keyword(s):  
Topological Insulator ◽  
Surface State

scholarly journals Mirror-symmetry protected non-TRIM surface state in the weak topological insulator Bi2TeI

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
I. P. Rusinov ◽  
T. V. Menshchikova ◽  
A. Isaeva ◽  
S. V. Eremeev ◽  
Yu. M. Koroteev ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Surface State ◽  
Mirror Symmetry ◽  
Symmetry Protected
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