High thermal conductivity and thermal boundary conductance of homoepitaxially grown gallium nitride (GaN) thin films

2021 ◽  
Vol 5 (10) ◽  
Author(s):  
Yee Rui Koh ◽  
Md Shafkat Bin Hoque ◽  
Habib Ahmad ◽  
David H. Olson ◽  
Zeyu Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Gallium Nitride ◽  
High Thermal Conductivity ◽  
Thermal Boundary Conductance

scholarly journals High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process

2007 ◽  
Vol 48 (10) ◽  
pp. 2782-2786 ◽  
Author(s):  
Hiroyuki Shibata ◽  
Yoshio Waseda ◽  
Hiromichi Ohta ◽  
Kazumasa Kiyomi ◽  
Kenji Shimoyama ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Gallium Nitride ◽  
High Thermal Conductivity

scholarly journals Thermal Models for Determining Thermal Conductivity and Thermal Boundary Conductance Using Pump-Probe Thermoreflectance Techniques

2009 ◽  
Author(s):  
Patrick E. Hopkins ◽  
Justin R. Serrano ◽  
Leslie M. Phinney
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Probe Signal ◽  
Pump Probe ◽  
Thermal Models ◽  
Thermal Boundary Conductance ◽  
Advantages And Disadvantages ◽  
Heating Event ◽  
Lock In ◽  
Thermal Conductivity Λ

Pump-probe transient thermoreflectance (TTR) techniques are powerful tools for measuring thermophysical properties of thin films, such as thermal conductivity, Λ, or thermal boundary conductance, G. TTR experimental setups rely on lock-in techniques to detect the response of the probe signal relative to the pump heating event. The temporal decays of the lock-in signal are then compared to thermal models to deduce the Λ and G in and across various materials. There are currently two thermal models that are used to relate the measured signals from the lock-in to the Λ and G in the sample of interest. In this work, the thermal models, their assumptions, and their ranges of applicability are compared. The advantages and disadvantages of each technique are elucidated from the results of the thermophysical property measurements.

Thermal conductivity of thin films of gallium nitride, doped with aluminium, measured with 3ω method

2020 ◽  
Vol 101 ◽  
pp. 106105 ◽  
Author(s):  
Alexandra Filatova-Zalewska ◽  
Zenon Litwicki ◽  
Tadeusz Suski ◽  
Andrzej Jeżowski
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Gallium Nitride ◽  
3Ω Method ◽  
Conductivity Of Thin Films

scholarly journals Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material

Doklady BGUIR ◽  
2021 ◽  
Vol 19 (6) ◽  
pp. 74-82
Author(s):  
V. S. Volcheck ◽  
V. R. Stempitsky
Keyword(s):  
Thermal Conductivity ◽  
Gallium Nitride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Heat Removal ◽  
High Thermal Conductivity ◽  
Device Structures ◽  
Effect Transistor ◽  
Heat Removal System ◽  
Removal System

The self-heating effect poses a main problem for high-power electronic and optoelectronic devices based on gallium nitride. A non-uniform distribution of the dissipated power and a rise of the average temperature inside the gallium nitride heterostructure field-effect transistor lead to the formation of a hot spot near the conducting channel and result in the degradation of the drain current, output power and device reliability. The purpose of this work is to develop the design of a gallium nitride heterostructure field-effect transistor with an effective heat-removal system and to study using numerical simulation the thermal phenomena specific to this device. The objects of the research are the device structures formed on sapphire, each of whom features both a graphene heat-eliminating element on its top surface and a trench in the passivation layer filled by a high thermal conductivity material. The subject of the research is the electrical and thermal characteristics of these device structures. The simulation results verify the effectiveness of the integration of the heat-removal system into the gallium nitride heterostructure field-effect transistor that can mitigate the self-heating effect and improve the device performance. The advantage of our concept is that the graphene heat-eliminating element is structurally connected with a heat sink and is designed for removing the heat immediately from the maximum temperature area through the trench in which a high thermal conductivity material is deposited. The results can be used by the electronics industry of the Republic of Belarus for developing the hardware components of gallium nitride power electronics.

The exceptionally high thermal conductivity after ‘alloying’ two-dimensional gallium nitride (GaN) and aluminum nitride (AlN)

2021 ◽  
Vol 32 (13) ◽  
pp. 135401
Author(s):  
Huimin Wang ◽  
Donghai Wei ◽  
Junfei Duan ◽  
Zhenzhen Qin ◽  
Guangzhao Qin ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Gallium Nitride ◽  
Aluminum Nitride ◽  
High Thermal Conductivity ◽  
Two Dimensional

Measurement of Thermal Diffusivity of Cvd diamond films using modified ac calorimetry

1995 ◽  
Vol 416 ◽  
Author(s):  
Akikazu Maesono ◽  
Ronald. P. Tye
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Thermal Diffusivity ◽  
Cvd Diamond ◽  
High Thermal Conductivity ◽  
Ac Calorimetry ◽  
Free Standing ◽  
International Round ◽  
Flow Directions ◽  
Very High

ABSTRACTMany applications of thin films, especially for electronics devices, require that these materials, which are often anisotropic, have a very high thermal conductivity as well as uniform areal properties to ensure that reproducible performance be attained. These factors necessitate that measurements of thermal transport properties are required both to provide absolute application values for different heat flow directions as well as to evaluate uniformity and homogeneity of a wafer. For diamond, the combination of a very high thermal conductivity with limited size and form of available specimen presents unique challenges to the experimentalist. As a result, a modification of the ac calorimeter method has been developed to evaluate the thermal diffusivity of thin films.Details of the technique will be provided together with examples of its use to evaluate thermal diffusivity and thermal conductivity of different CVD diamond film composites having thicknesses from 10µm to 600µm and free-standing films. In addition, results using this method will be compared. with those obtained by other techniques involved in a recent international round-robin measurements program designed to evaluate a potential standard method(s).

Thermal boundary conductance between high thermal conductivity boron arsenide and silicon

2020 ◽  
Vol 127 (5) ◽  
pp. 055105 ◽  
Author(s):  
Zhiyong Wei ◽  
Ze Yang ◽  
Ming Liu ◽  
Honglei Wu ◽  
Yunfei Chen ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Thermal Conductivity ◽  
Thermal Boundary Conductance ◽  
Boron Arsenide

Thermal Conductivity Measurement of Cobalt-Iron Thin Films Using the Time-Resolved Thermoreflectance Technique

2009 ◽  
Author(s):  
Taehee Jeong ◽  
Jian-Gang Zhu
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Metal Film ◽  
Conductivity Measurement ◽  
High Thermal Conductivity ◽  
Thermal Conductivity Measurement ◽  
Thermal Barrier ◽  
Si Substrate ◽  
Time Resolved ◽  
Cobalt Iron

Using the time–resolved thermoreflectance technique, the thermal conductivity of CoFe films are measured with various thicknesses and the results show a thickness-dependent thermal conductivity. In order to overcome the obstacle for the high thermal conductivity metal film measurement, a thermal barrier (SiNx) is added between the metal film and Si substrate.

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